Memory devices including phase change material elements
Memory devices having a plurality of memory cells, with each memory cell including a phase change material having a laterally constricted portion thereof. The laterally constricted portions of adjacent memory cells are vertically offset and positioned on opposite sides of the memory device. Also disclosed are memory devices having a plurality of memory cells, with each memory cell including first and second electrodes having different widths. Adjacent memory cells have the first and second electrodes offset on vertically opposing sides of the memory device. Methods of forming the memory devices are also disclosed.
1. A memory device, comprising:
memory cells, at least one memory cell of the memory cells comprising a phase change material element over a first electrode, each phase change material element comprising a programmable volume having an interface with the first electrode at a single location, and the programmable volumes of adjacent phase change material elements disposed at opposite ends of the memory cells.
2. The memory device of claim 1 , further comprising second electrodes over each of the phase change material elements.
3. The memory device of claim 2 , wherein the programmable volume of a first phase change material element is in direct contact with the first electrode and the programmable volume of a second phase change material element is in direct contact with the second electrode.
4. The memory device of claim 2 , wherein the programmable volumes of adjacent phase change material elements are in alternating contact with the first electrodes and the second electrodes.
5. The memory device of claim 2 , wherein each of the programmable volumes has an interface with the second electrode at a single location.
6. The memory device of claim 1 , wherein the interface between the programmable volume and the first electrode comprises a planar interface.
7. A memory device, comprising:
memory cells, at least one memory cell of the memory cells comprising a phase change material element over an electrode, each phase change material element comprising a programmable volume and the programmable volumes of adjacent phase change material elements vertically staggered relative to one another.
8. The memory device of claim 7 , wherein a bit-to-bit distance between adjacent phase change material elements is maximized.
9. The memory device of claim 7 , wherein the programmable volumes of adjacent phase change material elements are disposed at opposite ends of the memory cells.
10. The memory device of claim 7 , wherein the phase change material elements have a non-uniform width.
11. A method of forming a memory device, the method comprising:
forming memory cells, at least one memory cell of the memory cells comprising a phase change material element over a first electrode, each phase change material element comprising a programmable volume having an interface with the first electrode at a single location, and the programmable volumes of adjacent phase change material elements disposed at opposite ends of the memory cells.
12. A method of forming a memory device, the method comprising:
forming memory cells, at least one memory cell of the memory cells comprising a phase change material element over an electrode, each phase change material element comprising a programmable volume and the programmable volumes of adjacent phase change material elements vertically staggered relative to one another.