Unmerged epitaxial process for FinFET devices with aggressive fin pitch scaling
Semiconductor devices and methods for making the same includes conformally forming a first spacer on multiple fins. A second spacer is conformally formed on the first spacer, the second spacer being formed from a different material from the first spacer. The fins are etched below a bottom level of the first spacer to form a fin cavity. Material from the first spacer is removed to expand the fin cavity. Fin material is grown directly on the etched fins to fill the fin cavity.
1. A transistor device, comprising:
a plurality of semiconductor fins formed on a substrate, each having a channel region, a source region, and a drain region, wherein the source and drain region of each of the plurality of semiconductor fins has a top region and a bottom region and wherein the top region has a greater width than the bottom region;
a dielectric layer formed on the substrate and in direct contact with the bottom region;
a plurality of hardmask spacers, each having a u-shaped cross-section and being formed from a continuous material in direct contact with the sidewalls of the top region of adjacent semiconductor fins; and
a gate formed over the channel region of the semiconductor fins.
2. The transistor device of claim 1 , further comprising a plurality of dielectric spacers, each formed directly between a respective hardmask spacer and the dielectric layer.
3. The transistor device of claim 2 , wherein each hardmask spacer conformally follows and contacts the sidewalls of the adjacent semiconductor fins and a respective dielectric spacer.
4. The transistor of claim 1 , wherein the dielectric layer is formed from a first dielectric material and the plurality of hardmask spacers are formed from a second dielectric material that is different from the first dielectric material.
5. The transistor of claim 4 , wherein each hardmask spacer is formed from silicon nitride and the dielectric layer is formed from silicon dioxide.
6. The transistor of claim 2 , wherein the width of the top region of each of the plurality of semiconductor fins is greater than the width of the bottom region of each of the plurality of semiconductor fins by an amount that is twice a thickness of the dielectric spacers.
7. The transistor of claim 1 , wherein the top region of each of the plurality of semiconductor fins has a width between 10 nm and 20 nm.
8. The transistor of claim 7 , wherein a spacing between the top regions of adjacent semiconductor fins is between 5 nm and 10 nm.
9. The transistor of claim 1 , wherein the bottom region of each semiconductor fin has a height the same as a height of the dielectric layer.
10. The transistor of claim 1 , wherein the top regions of the plurality of semiconductor fins are formed from epitaxially grown silicon.
11. A transistor device, comprising:
a plurality of fins formed on a substrate, each having a channel region, a source region, and a drain region, wherein the source and drain region of each of the plurality of fins has a top region and a bottom region and wherein the top region has a greater width than the bottom region;
a dielectric layer formed on the substrate and in direct contact with the bottom region, wherein the bottom region of each fin has a height the same as a height of the dielectric layer;
a plurality of dielectric spacers formed directly on the dielectric layer between adjacent fins, wherein the width of the top region of each of the plurality of fins is greater than the width of the bottom region of each of the plurality of fins by an amount that is twice a thickness of the dielectric spacers;
a plurality of hardmask spacers, each having a u-shaped cross-section and being formed in direct contact with the sidewalls of adjacent fins; and
a gate formed over the channel region of the fins.
12. The transistor device of claim 11 , wherein each hardmask spacer conformally follows and contacts the sidewalls of the adjacent fins and a respective dielectric spacer.
13. The transistor of claim 11 , wherein the hardmask spacer is formed from a first dielectric material and the plurality of dielectric spacers are formed from a second dielectric material that is different from the first dielectric material.
14. The transistor of claim 13 , wherein the hardmask spacer is formed from silicon nitride and the dielectric spacer is formed from silicon dioxide.
15. The transistor of claim 11 , wherein the top region of each of the plurality of fins has a width between 10 nm and 20 nm.
16. The transistor of claim 15 , wherein a spacing between the top regions of adjacent fins is between 5 nm and 10 nm.
17. The transistor of claim 11 , wherein the top regions of the plurality of fins are formed from epitaxially grown silicon.
18. A transistor device, comprising:
a plurality of fins formed on a substrate, each having a channel region, a source region, and a drain region, wherein the source and drain region of each of the plurality of fins has a top region and a bottom region and wherein the top region has a greater width than the bottom region;
a dielectric layer formed on the substrate and in direct contact with the bottom region, wherein the bottom region of each fin has a height the same as a height of the dielectric layer;
a plurality of dielectric spacers formed from a first dielectric material directly on the dielectric layer between adjacent fins, wherein the width of the top region of each of the plurality of fins is greater than the width of the bottom region of each of the plurality of fins by an amount that is twice a thickness of the dielectric spacers;
a plurality of hardmask spacers formed from a continuous second dielectric material different from the first dielectric material, each formed conformally to follow and directly contact the sidewalls of adjacent fins and a respective dielectric spacer and each having a u-shaped cross section; and
a gate formed over the channel region of the fins.