Address fault detection in a flash memory system
A system and method are disclosed for performing address fault detection in a flash memory system. In one embodiment, a flash memory system comprises a memory array comprising flash memory cells arranged in rows and columns, a row decoder for receiving a row address as an input, the row decoder coupled to a plurality of word lines, wherein each word line is coupled to a row of flash memory cells in the memory array, an address fault detection array comprising a column of memory cells, wherein each of the plurality of word lines is coupled to a memory cell in the column, and an analog comparator for comparing a current drawn by the column with a reference current and for indicating a fault if the current drawn by the column exceeds the reference current.
1. A flash memory system, comprising:
a memory array comprising flash memory cells arranged in rows and columns;
a row decoder for receiving a row address as an input, the row decoder coupled to a plurality of word lines, wherein each word line is coupled to a row of flash memory cells in the memory array;
an address fault detection array comprising a column of memory cells, wherein each of the plurality of word lines is coupled to a memory cell in the column; and
an analog comparator for comparing a current drawn by the column with a reference current and for indicating a fault if the current drawn by the column exceeds the reference current.
2. The system of claim 1 , wherein the address fault detection array comprises one or more source line transistors that pull one or more columns in the address fault detection array to ground during a power-down operation.
3. The system of claim 1 , wherein each flash memory cell in the memory array is a split gate flash memory cell.
4. The system of claim 1 , wherein each memory cell in the address fault detection array is a split gate flash memory cell.
5. The system of claim 1 , wherein each memory cell in the address fault detection array is a ROM cell.
6. The system of claim 1 , wherein each flash memory cell in the memory array is programmed through a source side hot electron programming mechanism.
7. The system of claim 1 , wherein each memory cell in the address fault detection array is a flash memory cell programmed through a source side hot electron programming mechanism.
8. The system of claim 1 , wherein each flash memory cell in the memory array comprises a floating gate and an erase gate, wherein a top corner of the floating gate protrudes towards an inside corner of the erase gate to enhance erase efficiency.
9. The system of claim 1 , wherein each memory cell in the address fault detection array is a flash memory cell comprising a floating gate and an erase gate, wherein a top corner of the floating gate protrudes towards an inside corner of the erase gate to enhance erase efficiency.
10. The system of claim 1 , wherein for each flash memory cell in the memory array, an erased state in a flash memory cell represents a “1” value and a programmed state in a flash memory cell represents a “0” value.
11. The system of claim 1 , wherein each memory cell in the address fault detection array is a flash memory cell and an erased state in the flash memory cells represents a “1” value and a programmed state in the flash memory cells represents a “0” value.
12. The system of claim 1 , wherein the memory array and the address fault detection array are coupled to different control gate lines, erase gate lines, and source lines.
13. The system of claim 1 , wherein the analog comparator indicates a fault if no rows have been selected.
14. The system of claim 1 , wherein the analog comparator indicates no fault if one and only one row has been selected.
15. The system of claim 1 , wherein the analog comparator indicates a fault if two or more rows have been selected.
16. The system of claim 1 , further comprising a sensing circuit for reading data in the address fault detection array.
17. The system of claim 16 , wherein the sensing circuit is a differential sensing circuit.
18. The system of claim 16 , wherein the sensing circuit is a single ended sensing circuit.
19. The system of claim 17 , wherein each flash memory cell in the memory array is a split gate flash memory cell.
20. The system of claim 18 , wherein each flash memory cell in the memory array is a split gate flash memory cell.