Light-emitting device and method for manufacturing the same

1. A method for manufacturing a light-emitting device, comprising:

providing a semiconductor structure, wherein the semiconductor structure has a first type semiconductor layer, a light-emitting layer and a second type semiconductor layer formed on a substrate in sequence;

forming a first patterned photoresist layer on the semiconductor structure;

etching the semiconductor structure by using the first patterned photoresist layer to form an opening to expose a portion of the first type semiconductor layer and then removing the first patterned photoresist layer, wherein the opening has a first width;

forming a second patterned photoresist layer over the semiconductor structure, wherein the second patterned photoresist layer has a second opening exposing the first type semiconductor layer in the first opening, wherein the second opening has a second width smaller than the first width;

forming a third patterned photoresist layer over the second patterned photoresist layer, wherein the third patterned photoresist layer has a third opening exposing the first type semiconductor layer in the second opening, wherein the third opening has a third width smaller than the second width;

etching the exposed first type semiconductor layer to form a recess to expose a portion of the substrate and then removing the third patterned photoresist layer and the second patterned photoresist layer;

forming an insulating layer covering a portion of the semiconductor structure and the exposed portion of the substrate; and

forming a metal layer on the insulating layer and electrically connected to the semiconductor structure.

2. The method for manufacturing the light-emitting device of claim 1 , wherein after the step of etching the exposed first type semiconductor layer to form a recess to expose a portion of the substrate, the semiconductor structure is etched to at least form adjacent a first light-emitting unit and a second light-emitting unit, and the first light-emitting unit and the second light-emitting unit are electrically isolated.

3. The method for manufacturing the light-emitting device of claim 2 , wherein the metal layer electrically connects the first light-emitting unit and the second light-emitting unit.

4. The method for manufacturing the light-emitting device of claim 3 , wherein a material of the metal layer comprises gold, aluminum, chromium, platinum, titanium, nickel or indium tin oxide.

5. The method for manufacturing the light-emitting device of claim 3 , wherein the metal layer is a multilayer structure.

6. The method for manufacturing the light-emitting device of claim 5 , wherein a material of the metal layer comprises a multilayer structure of Cr/Al/Ti/Pt/Au or a multilayer structure of Cr/Al/Ti/Pt/Ti/Pt/Au.

7. The method for manufacturing the light-emitting device of claim 5 , wherein the multilayer structure of the metal layer comprises a structure having partially periodically repeated metals.

8. The method for manufacturing the light-emitting device of claim 5 , wherein a material of an outermost layer of the multilayer structure is formed of the element excluding Au.

9. The method for manufacturing the light-emitting device of claim 3 , wherein the first light-emitting unit has a first sidewall and a second sidewall, and the second light-emitting unit has a third sidewall and a fourth sidewall, and the metal layer spans on the first sidewall and the third sidewall, wherein a slope of the first sidewall is smaller than a slope of the second sidewall, and a slope of the third sidewall is smaller than a slope of the fourth sidewall.

10. The method for manufacturing the light-emitting device of claim 9 , wherein a material of the metal layer comprises gold, aluminum, chromium, platinum, titanium, nickel or indium tin oxide.

11. The method for manufacturing the light-emitting device of claim 9 , wherein the metal layer is a multilayer structure.

12. The method for manufacturing the light-emitting device of claim 11 , wherein a material of the metal layer comprises a multilayer structure of Cr/Al/Ti/Pt/Au or a multilayer structure of Cr/Al/Ti/Pt/Ti/Pt/Au.

13. The method for manufacturing the light-emitting device of claim 11 , wherein the multilayer structure of the metal layer comprises a structure having partially periodically repeated metals.

14. The method for manufacturing the light-emitting device of claim 11 , wherein a material of an outermost layer of the multilayer structure is formed of the element excluding Au.

15. The method for manufacturing the light-emitting device of claim 3 , wherein the insulating layer covers a sidewall of one of the first light-emitting unit and the second light-emitting unit.

16. The method for manufacturing the light-emitting device of claim 15 , wherein a material of the metal layer comprises gold, aluminum, chromium, platinum, titanium, nickel or indium tin oxide.

17. The method for manufacturing the light-emitting device of claim 15 , wherein the metal layer is a multilayer structure.

18. The method for manufacturing the light-emitting device of claim 17 , wherein a material of the metal layer comprises a multilayer structure of Cr/Al/Ti/Pt/Au or a multilayer structure of Cr/Al/Ti/Pt/Ti/Pt/Au.

19. The method for manufacturing the light-emitting device of claim 17 , wherein the multilayer structure of the metal layer comprises a structure having partially periodically repeated metals.

20. The method for manufacturing the light-emitting device of claim 17 , wherein a material of an outermost layer of the multilayer structure is formed of the element excluding Au.