Semiconductor film comprising an oxide containing in atoms, Sn atoms and Zn atoms
A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.
1. A sputtering target that is entirely continuous for forming a semiconductor layer of a field effect transistor, comprising an oxide sintered body wherein, the oxide sintered body contains In atoms, Sn atoms and Zn atoms, based on a total amount of atoms present in said sintered body,
the atomic composition ratio of Zn/(In+Sn+Zn) being 70 atom % or less,
the atomic composition ratio of In/(In+Sn+Zn) being less than 33 atom %,
the atomic composition ratio of Sn/(In+Sn+Zn) being 5 atom % or more and less than 15 atom %,
the target comprises a spinel-structure compound represented by Zn 2 SnO 4 , and
wherein the target has no voids or includes pinholes, wherein when the target includes pinholes, the number of pinholes with a Feret's diameter of 2 μm or more is 50/mm 2 or less.
2. The sputtering target for forming the semiconductor layer of the field effect transistor according to claim 1 ,
wherein the atomic composition ratio of Zn/(In+Sn+Zn) is 60 atom % or more and 67 atom % or less,
the atomic composition ratio of In/(In+Sn+Zn) is 18 atom % or more and 28 atom % or less, and
the atomic composition ratio of Sn/(In+Sn+Zn) being 5 atom % or more and less than 15 atom %.
3. The sputtering target for forming the semiconductor layer of the field effect transistor according to claim 1 , additionally comprising
Na in an amount which is less than 100 ppm based on the total amount of atoms present in said sintered body.
4. The sputtering target for forming the semiconductor layer of the field effect transistor according to claim 1 ,
wherein a bending strength of the target is 8 kg/mm 2 or more.
5. The sputtering target for forming the semiconductor layer of the field effect transistor according to claim 1 ,
wherein a surface roughness Ra of the target is 0.5 μm or less.