IP Library › Granted Patent US 12,249,653
Granted Patent B2
US 12,249,653 · App. 17/881,676 · Granted Mar 11, 2025

Semiconductor device

Inventor: Shunpei Yamazaki (Tokyo, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L29/7869H01L27/1222H01L27/1225H01L29/786H01L29/78606H01L29/78693
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Quick Facts
Patent No.
US 12,249,653
App. No.
17/881,676
Granted
Mar 11, 2025
Kind
B2
Abstract

An object is to stabilize electric characteristics of a semiconductor device including an oxide semiconductor to increase reliability. The semiconductor device includes an insulating film; a first metal oxide film on and in contact with the insulating film; an oxide semiconductor film partly in contact with the first metal oxide film; source and drain electrodes electrically connected to the oxide semiconductor film; a second metal oxide film partly in contact with the oxide semiconductor film; a gate insulating film on and in contact with the second metal oxide film; and a gate electrode over the gate insulating film.

Claims (47)

1. A semiconductor device comprising:

a first transistor in a pixel portion; and

a second transistor in a driver portion,

wherein the first transistor comprises:

a first oxide film over an insulating film;

a first oxide semiconductor film over and in contact with the first oxide film;

a second oxide film over the first oxide semiconductor film;

a first source electrode and a first drain electrode electrically connected to the first oxide semiconductor film; and

a first gate electrode over the first oxide semiconductor film,

wherein the second transistor comprises:

a third oxide film over the insulating film;

a second oxide semiconductor film over and in contact with the third oxide film;

a fourth oxide film over the second oxide semiconductor film;

a second source electrode and a second drain electrode electrically connected to the second oxide semiconductor film; and

a second gate electrode over the second oxide semiconductor film,

wherein each of the second oxide film and the fourth oxide film is an island-shaped,

wherein the first oxide semiconductor film is in contact with a side surface and a top surface of each of the first source electrode and the first drain electrode, and

wherein the second oxide semiconductor film is in contact with a side surface and a top surface of each of the second source electrode and the second drain electrode.

2. The semiconductor device according to claim 1 , wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises indium, gallium, and zinc.

3. The semiconductor device according to claim 1 , wherein each of the first oxide film, the second oxide film, the third oxide film, and the fourth oxide film comprises gallium.

4. The semiconductor device according to claim 1 ,

wherein the pixel portion further comprises a light-emitting element, and

wherein the light-emitting element is electrically connected to the first transistor.

5. A semiconductor device comprising:

a first transistor in a pixel portion, and

a second transistor in a driver portion,

wherein the first transistor comprises:

a first oxide film over an insulating film;

a first oxide semiconductor film over and in contact with the first oxide film;

a second oxide film over the first oxide semiconductor film;

a first source electrode and a first drain electrode electrically connected to the first oxide semiconductor film, and

a first gate electrode over the first oxide semiconductor film, wherein the second transistor comprises:

a third oxide film over the insulating film;

a second oxide semiconductor film over and in contact with the third oxide film;

a fourth oxide film over the second oxide semiconductor film;

a second source electrode and a second drain electrode electrically connected to the second oxide semiconductor film; and

a second gate electrode over the second oxide semiconductor film;

wherein each of the second oxide film and the fourth oxide film is an island-shaped,

wherein the first oxide semiconductor film is in contact with a side surface and a top surface of each of the first source electrode and the first drain electrode,

wherein the second oxide semiconductor film is in contact with a side surface and a top surface of each of the second source electrode and the second drain electrode,

wherein an end portion of the second oxide film is positioned outside an end portion of the first gate electrode, and

wherein an end portion of the fourth oxide film is positioned outside an end portion of the second gate electrode.

6. The semiconductor device according to claim 5 , wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises indium, gallium, and zinc.

7. The semiconductor device according to claim 5 , wherein each of the first oxide film, the second oxide film, the third oxide film, and the fourth oxide film comprises gallium.

8. The semiconductor device according to claim 5 ,

wherein the pixel portion further comprises a light-emitting element, and

wherein the light-emitting element is electrically connected to the first transistor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 5, 2022
From: YAMAZAKI, SHUNPEI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 060727/0606 →
Priority Claims (1)
JP 2010-086407 · Apr 2, 2010 · national
Continuity (6)
Continuation 16831934 · Mar 27, 2020
Continuation 15844676 · Dec 18, 2017
Continuation 15096350 · Apr 12, 2016
Continuation 13955151 · Jul 31, 2013
Continuation 13074582 · Mar 29, 2011
Related Publication 20230021382A1 · Jan 26, 2023
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