IP Library › Granted Patent US 12,252,775
Granted Patent B2
US 12,252,775 · App. 18/633,854 · Granted Mar 18, 2025

Sputtering target, method for manufacturing sputtering target, and method for forming thin film

Inventors: Shunpei Yamazaki (Tokyo, JP); Tetsunori Maruyama (Kanagawa, JP); Yuki Imoto (Kanagawa, JP); Hitomi Sato (Kanagawa, JP); Masahiro Watanabe (Tochigi, JP); Mitsuo Mashiyama (Tochigi, JP); Kenichi Okazaki (Tochigi, JP); Motoki Nakashima (Kanagawa, JP); Takashi Shimazu (Tokyo, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
C23C14/3414B28B11/243C04B35/453C04B35/64C23C14/08C23C14/086C23C14/345H01L21/02565H01L21/02631H01L29/24H01L29/66969H01L29/7869C04B2235/3284C04B2235/3286C04B2235/76
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,252,775
App. No.
18/633,854
Granted
Mar 18, 2025
Kind
B2
Abstract

There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

Claims (98)

1. A semiconductor device comprising:

a first transistor comprising a silicon film;

a second transistor comprising an oxide semiconductor film; and

a capacitor,

wherein a first insulating film is provided over the silicon film,

wherein the first insulating film comprises a region functioning as a gate insulating film of the first transistor,

wherein a first conductive film is provided over the first insulating film,

wherein the first conductive film comprises a region functioning as a gate electrode of the first transistor,

wherein a second insulating film is in contact with a side surface of the first conductive film,

wherein a third insulating film comprises a region in contact with the second insulating film,

wherein the oxide semiconductor film is provided over the third insulating film,

wherein a fourth insulating film is provided over the oxide semiconductor film,

wherein the fourth insulating film comprises a region functioning as a gate insulating film of the second transistor,

wherein a second conductive film is provided over the fourth insulating film,

wherein the second conductive film comprises a region functioning as a gate electrode of the second transistor,

wherein a fifth insulating film is in contact with a side surface of the second conductive film,

wherein a third conductive film comprises a region in contact with the fifth insulating film and a region in contact with the fourth insulating film,

wherein the third conductive film comprises a region functioning as one of a source electrode and a drain electrode of the second transistor,

wherein a fourth conductive film comprises a region in contact with the fifth insulating film and a region in contact with the fourth insulating film,

wherein the fourth conductive film comprises a region functioning as the other of the source electrode and the drain electrode of the second transistor and one electrode of the capacitor,

wherein a sixth insulating film is provided over the second conductive film, the third conductive film, and the fourth conductive film,

wherein a fifth conductive film is provided over the sixth insulating film,

wherein the fifth conductive film comprises a region functioning as the other electrode of the capacitor,

wherein the silicon film comprises a region functioning as a channel of the first transistor,

wherein the oxide semiconductor film comprises a region functioning as a channel of the second transistor,

wherein the fourth conductive film comprises a region in contact with a top surface of the first conductive film,

wherein the fifth conductive film comprises a region overlapping with the first conductive film with the sixth insulating film and the fourth conductive film therebetween, and

wherein the fifth conductive film comprises a region overlapping with the channel of the first transistor, with the sixth insulating film, the fourth conductive film, and the first conductive film therebetween.

2. A semiconductor device comprising:

a first transistor comprising a silicon film;

a second transistor comprising an oxide semiconductor film; and

a capacitor,

wherein a first insulating film is provided over the silicon film,

wherein the first insulating film comprises a region functioning as a gate insulating film of the first transistor,

wherein a first conductive film is provided over the first insulating film,

wherein the first conductive film comprises a region functioning as a gate electrode of the first transistor,

wherein a second insulating film is in contact with a side surface of the first conductive film,

wherein a third insulating film comprises a region in contact with the second insulating film,

wherein the oxide semiconductor film is provided over the third insulating film,

wherein a fourth insulating film is provided over the oxide semiconductor film,

wherein the fourth insulating film comprises a region functioning as a gate insulating film of the second transistor,

wherein a second conductive film is provided over the fourth insulating film,

wherein the second conductive film comprises a region functioning as a gate electrode of the second transistor,

wherein a fifth insulating film is in contact with a side surface of the second conductive film,

wherein a third conductive film comprises a region in contact with the fifth insulating film and a region in contact with the fourth insulating film,

wherein the third conductive film comprises a region functioning as one of a source electrode and a drain electrode of the second transistor,

wherein a fourth conductive film comprises a region in contact with the fifth insulating film and a region in contact with the fourth insulating film,

wherein the fourth conductive film comprises a region functioning as the other of the source electrode and the drain electrode of the second transistor and one electrode of the capacitor,

wherein a sixth insulating film is provided over the second conductive film, the third conductive film, and the fourth conductive film,

wherein a fifth conductive film is provided over the sixth insulating film,

wherein the fifth conductive film comprises a region functioning as the other electrode of the capacitor,

wherein a seventh insulating film is provided over the fifth conductive film,

wherein a sixth conductive film is provided over the seventh insulating film,

wherein the sixth conductive film is electrically connected to the third conductive film,

wherein the silicon film comprises a region functioning as a channel of the first transistor,

wherein the oxide semiconductor film comprises a region functioning as a channel of the second transistor,

wherein the fourth conductive film comprises a region in contact with a top surface of the first conductive film,

wherein the fifth conductive film comprises a region overlapping with the first conductive film with the sixth insulating film and the fourth conductive film therebetween, and

wherein the fifth conductive film comprises a region overlapping with the channel of the first transistor, with the sixth insulating film, the fourth conductive film, and the first conductive film therebetween.

3. A semiconductor device comprising:

a first transistor comprising a silicon film;

a second transistor comprising an oxide semiconductor film; and

a capacitor,

wherein a first insulating film is provided over the silicon film,

wherein the first insulating film comprises a region functioning as a gate insulating film of the first transistor,

wherein a first conductive film is provided over the first insulating film,

wherein the first conductive film comprises a region functioning as a gate electrode of the first transistor,

wherein a second insulating film is in contact with a side surface of the first conductive film,

wherein a third insulating film comprises a region in contact with the second insulating film,

wherein the oxide semiconductor film is provided over the third insulating film,

wherein a fourth insulating film is provided over the oxide semiconductor film,

wherein the fourth insulating film comprises a region functioning as a gate insulating film of the second transistor,

wherein a second conductive film is provided over the fourth insulating film,

wherein the second conductive film comprises a region functioning as a gate electrode of the second transistor,

wherein a fifth insulating film is in contact with a side surface of the second conductive film,

wherein a third conductive film comprises a region in contact with the fifth insulating film and a region in contact with the fourth insulating film,

wherein the third conductive film comprises a region functioning as one of a source electrode and a drain electrode of the second transistor,

wherein a fourth conductive film comprises a region in contact with the fifth insulating film and a region in contact with the fourth insulating film,

wherein the fourth conductive film comprises a region functioning as the other of the source electrode and the drain electrode of the second transistor and one electrode of the capacitor,

wherein a sixth insulating film is provided over the second conductive film, the third conductive film, and the fourth conductive film,

wherein a fifth conductive film is provided over the sixth insulating film,

wherein the fifth conductive film comprises a region functioning as the other electrode of the capacitor,

wherein the silicon film comprises a region functioning as a channel of the first transistor,

wherein the oxide semiconductor film comprises a region functioning as a channel of the second transistor,

wherein the fourth conductive film comprises a region in contact with a top surface of the first conductive film,

wherein the fifth conductive film comprises a region overlapping with the first conductive film with the sixth insulating film and the fourth conductive film therebetween,

wherein the fifth conductive film comprises a region overlapping with the channel of the first transistor, with the sixth insulating film, the fourth conductive film, and the first conductive film therebetween,

wherein the oxide semiconductor film comprises indium, gallium, and zinc, and

wherein the oxide semiconductor film comprises a region including a crystal.

4. The semiconductor device according to claim 1 ,

wherein the oxide semiconductor film comprises a first region overlapping with the second conductive film and a second region overlapping with the third conductive film, and

wherein a resistance of the first region is higher than a resistance of the second region.

5. The semiconductor device according to claim 2 ,

wherein the oxide semiconductor film comprises a first region overlapping with the second conductive film and a second region overlapping with the third conductive film, and

wherein a resistance of the first region is higher than a resistance of the second region.

6. The semiconductor device according to claim 3 ,

wherein the oxide semiconductor film comprises a first region overlapping with the second conductive film and a second region overlapping with the third conductive film, and

wherein a resistance of the first region is higher than a resistance of the second region.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 12, 2024
From: YAMAZAKI, SHUNPEI; MARUYAMA, TETSUNORI; IMOTO, YUKI; SATO, HITOMI; WATANABE, MASAHIRO; MASHIYAMA, MITSUO; OKAZAKI, KENICHI; NAKASHIMA, MOTOKI; SHIMAZU, TAKASHI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 067087/0750 →
Priority Claims (2)
JP 2011-128750 · Jun 8, 2011 · national
JP 2011-274954 · Dec 15, 2011 · national
Continuity (5)
Continuation 17228847 · Apr 13, 2021
Continuation 16285297 · Feb 26, 2019
Continuation 15189104 · Jun 22, 2016
Continuation 13488626 · Jun 5, 2012
Related Publication 20240254616A1 · Aug 1, 2024
References Cited (400)
US 5528032A · Uchiyama · 1996 [cited by applicant]
US 5622653A · Orita et al. · 1997 [cited by applicant]
US 5681671A · Orita et al. · 1997 [cited by applicant]
US 5700419A · Matsunaga et al. · 1997 [cited by applicant]
US 5731856A · Kim et al. · 1998 [cited by applicant]
US 5744864A · Cillessen et al. · 1998 [cited by applicant]
US 5843341A · Orita et al. · 1998 [cited by applicant]
US 5952086A · Ohnishi et al. · 1999 [cited by applicant]
US 5955178A · Orita et al. · 1999 [cited by applicant]
US 5972527A · Kaijou et al. · 1999 [cited by applicant]
US 6294274B1 · Kawazoe et al. · 2001 [cited by applicant]
US 6503374B1 · Tseng et al. · 2003 [cited by applicant]
US 6534183B1 · Inoue · 2003 [cited by applicant]
US 6563174B2 · Kawasaki et al. · 2003 [cited by applicant]
US 6669830B1 · Inoue et al. · 2003 [cited by applicant]
US 6689477B2 · Inoue · 2004 [cited by applicant]
US 6727522B1 · Kawasaki et al. · 2004 [cited by applicant]
US 6907849B2 · Galvin · 2005 [cited by applicant]
US 6998070B2 · Inoue et al. · 2006 [cited by applicant]
US 7049190B2 · Takeda et al. · 2006 [cited by applicant]
US 7061014B2 · Hosono et al. · 2006 [cited by applicant]
US 7064346B2 · Kawasaki et al. · 2006 [cited by applicant]
US 7105868B2 · Nause et al. · 2006 [cited by applicant]
US 7211825B2 · Shih et al. · 2007 [cited by applicant]
US 7282782B2 · Hoffman et al. · 2007 [cited by applicant]
US 7297977B2 · Hoffman et al. · 2007 [cited by applicant]
US 7306861B2 · Inoue et al. · 2007 [cited by applicant]
US 7323356B2 · Hosono et al. · 2008 [cited by applicant]
US 7385224B2 · Ishii et al. · 2008 [cited by applicant]
US 7393600B2 · Inoue et al. · 2008 [cited by applicant]
US 7402506B2 · Levy et al. · 2008 [cited by applicant]
US 7411209B2 · Endo et al. · 2008 [cited by applicant]
US 7453065B2 · Saito et al. · 2008 [cited by applicant]
US 7453087B2 · Iwasaki · 2008 [cited by applicant]
US 7462862B2 · Hoffman et al. · 2008 [cited by applicant]
US 7468304B2 · Kaji et al. · 2008 [cited by applicant]
US 7501293B2 · Ito et al. · 2009 [cited by applicant]
US 7510635B2 · Shindo et al. · 2009 [cited by applicant]
US 7648657B2 · Inoue et al. · 2010 [cited by applicant]
US 7674650B2 · Akimoto et al. · 2010 [cited by applicant]
US 7675796B2 · Kurokawa · 2010 [cited by applicant]
US 7732819B2 · Akimoto et al. · 2010 [cited by applicant]
US 7893431B2 · Kim et al. · 2011 [cited by applicant]
US 7935964B2 · Kim et al. · 2011 [cited by applicant]
US 7959982B2 · Le Craz · 2011 [cited by applicant]
US 7982216B2 · Imai · 2011 [cited by applicant]
US 8003981B2 · Iwasaki et al. · 2011 [cited by applicant]
US 8021916B2 · Akimoto et al. · 2011 [cited by applicant]
US 8115883B2 · Yamazaki et al. · 2012 [cited by applicant]
US 8137594B2 · Imanishi et al. · 2012 [cited by applicant]
US 8153031B2 · Yano et al. · 2012 [cited by applicant]
US 8193008B2 · Umezu et al. · 2012 [cited by applicant]
US 8202365B2 · Umeda et al. · 2012 [cited by applicant]
US 8264874B2 · Saito et al. · 2012 [cited by applicant]
US 8274078B2 · Itagaki et al. · 2012 [cited by applicant]
US 8304359B2 · Yano et al. · 2012 [cited by applicant]
US 8319218B2 · Yamazaki et al. · 2012 [cited by applicant]
US 8333913B2 · Inoue et al. · 2012 [cited by applicant]
US 8355109B2 · Kubota et al. · 2013 [cited by applicant]
US 8421070B2 · Kim et al. · 2013 [cited by applicant]
US 8450732B2 · Kim et al. · 2013 [cited by applicant]
US 8455371B2 · Yano et al. · 2013 [cited by applicant]
US 8488077B2 · Yamazaki et al. · 2013 [cited by applicant]
US 8492862B2 · Yamazaki et al. · 2013 [cited by applicant]
US 8502220B2 · Yamazaki et al. · 2013 [cited by applicant]
US 8598578B2 · Yano et al. · 2013 [cited by applicant]
US 8623511B2 · Kawashima et al. · 2014 [cited by applicant]
US 8641930B2 · Yano et al. · 2014 [cited by applicant]
US 8698970B2 · Yamazaki et al. · 2014 [cited by applicant]
US 8735882B2 · Kim et al. · 2014 [cited by applicant]
US 8784700B2 · Inoue et al. · 2014 [cited by applicant]
US 8795554B2 · Yano et al. · 2014 [cited by applicant]
US 8809115B2 · Akimoto et al. · 2014 [cited by applicant]
US 8872171B2 · Yamazaki et al. · 2014 [cited by applicant]
US 8879011B2 · Yamazaki et al. · 2014 [cited by applicant]
US 8889477B2 · Yamazaki et al. · 2014 [cited by applicant]
US 8994889B2 · Yamazaki et al. · 2015 [cited by applicant]
US 9136338B2 · Yano et al. · 2015 [cited by applicant]
US 9306072B2 · Yamazaki et al. · 2016 [cited by applicant]
US 9382611B2 · Yamazaki et al. · 2016 [cited by applicant]
US 9466756B2 · Yamazaki et al. · 2016 [cited by applicant]
US 9935202B2 · Yamazaki et al. · 2018 [cited by applicant]
US 10243005B2 · Yamazaki et al. · 2019 [cited by applicant]
US 10373843B2 · Yamazaki et al. · 2019 [cited by applicant]
US 10644163B2 · Yano et al. · 2020 [cited by applicant]
US 10833201B2 · Yano et al. · 2020 [cited by applicant]
US 11024516B2 · Yamazaki et al. · 2021 [cited by applicant]
US 20010046027A1 · Tai et al. · 2001 [cited by applicant]
US 20020056838A1 · Ogawa · 2002 [cited by applicant]
US 20020132454A1 · Ohtsu et al. · 2002 [cited by applicant]
US 20030189401A1 · Kido et al. · 2003 [cited by applicant]
US 20030218222A1 · Wager, III et al. · 2003 [cited by applicant]
US 20040038446A1 · Takeda et al. · 2004 [cited by applicant]
US 20040127038A1 · Carcia et al. · 2004 [cited by applicant]
US 20050017302A1 · Hoffman · 2005 [cited by applicant]
US 20050170311A1 · Tardieu et al. · 2005 [cited by applicant]
US 20050189401A1 · Butzer et al. · 2005 [cited by applicant]
US 20050199959A1 · Chiang et al. · 2005 [cited by applicant]
US 20060035452A1 · Carcia et al. · 2006 [cited by applicant]
US 20060043377A1 · Hoffman et al. · 2006 [cited by applicant]
US 20060091793A1 · Baude et al. · 2006 [cited by applicant]
US 20060108529A1 · Saito et al. · 2006 [cited by applicant]
US 20060108636A1 · Sano et al. · 2006 [cited by applicant]
US 20060110867A1 · Yabuta et al. · 2006 [cited by applicant]
US 20060113536A1 · Kumomi et al. · 2006 [cited by applicant]
US 20060113539A1 · Sano et al. · 2006 [cited by applicant]
US 20060113549A1 · Den et al. · 2006 [cited by applicant]
US 20060113565A1 · Abe et al. · 2006 [cited by applicant]
US 20060169973A1 · Isa et al. · 2006 [cited by applicant]
US 20060170111A1 · Isa et al. · 2006 [cited by applicant]
US 20060197092A1 · Hoffman et al. · 2006 [cited by applicant]
US 20060208977A1 · Kimura · 2006 [cited by applicant]
US 20060228974A1 · Thelss et al. · 2006 [cited by applicant]
US 20060231882A1 · Kim et al. · 2006 [cited by applicant]
US 20060238135A1 · Kimura · 2006 [cited by applicant]
US 20060244107A1 · Sugihara et al. · 2006 [cited by applicant]
US 20060284171A1 · Levy et al. · 2006 [cited by applicant]
US 20060284172A1 · Ishii · 2006 [cited by applicant]
US 20060292777A1 · Dunbar · 2006 [cited by applicant]
US 20070024187A1 · Shin et al. · 2007 [cited by applicant]
US 20070046191A1 · Saito · 2007 [cited by applicant]
US 20070052025A1 · Yabuta · 2007 [cited by applicant]
US 20070054507A1 · Kaji et al. · 2007 [cited by applicant]
US 20070090365A1 · Hayashi et al. · 2007 [cited by applicant]
US 20070098626A1 · Shindo et al. · 2007 [cited by applicant]
US 20070108446A1 · Akimoto · 2007 [cited by applicant]
US 20070152217A1 · Lai et al. · 2007 [cited by applicant]
US 20070158716A1 · Rinerson et al. · 2007 [cited by applicant]
US 20070172591A1 · Seo et al. · 2007 [cited by applicant]
US 20070187678A1 · Hirao et al. · 2007 [cited by applicant]
US 20070187760A1 · Furuta et al. · 2007 [cited by applicant]
US 20070194379A1 · Hosono et al. · 2007 [cited by applicant]
US 20070252928A1 · Ito et al. · 2007 [cited by applicant]
US 20070262314A1 · Noguchi · 2007 [cited by examiner]
US 20070272922A1 · Kim et al. · 2007 [cited by applicant]
US 20070287296A1 · Chang · 2007 [cited by applicant]
US 20080006877A1 · Mardilovich et al. · 2008 [cited by applicant]
US 20080038882A1 · Takechi et al. · 2008 [cited by applicant]
US 20080038929A1 · Chang · 2008 [cited by applicant]
US 20080050595A1 · Nakagawara et al. · 2008 [cited by applicant]
US 20080073653A1 · Iwasaki · 2008 [cited by applicant]
US 20080083950A1 · Pan et al. · 2008 [cited by applicant]
US 20080106191A1 · Kawase · 2008 [cited by applicant]
US 20080128689A1 · Lee et al. · 2008 [cited by applicant]
US 20080129195A1 · Ishizaki et al. · 2008 [cited by applicant]
US 20080166834A1 · Kim et al. · 2008 [cited by applicant]
US 20080182358A1 · Cowdery-Corvan et al. · 2008 [cited by applicant]
US 20080197750A1 · Katardjiev · 2008 [cited by applicant]
US 20080206923A1 · Kim et al. · 2008 [cited by applicant]
US 20080224133A1 · Park et al. · 2008 [cited by applicant]
US 20080237875A1 · Yamazaki et al. · 2008 [cited by applicant]
US 20080254569A1 · Hoffman et al. · 2008 [cited by applicant]
US 20080258139A1 · Ito et al. · 2008 [cited by applicant]
US 20080258140A1 · Lee et al. · 2008 [cited by applicant]
US 20080258141A1 · Park et al. · 2008 [cited by applicant]
US 20080258143A1 · Kim et al. · 2008 [cited by applicant]
US 20080296568A1 · Ryu et al. · 2008 [cited by applicant]
US 20080308774A1 · Inoue et al. · 2008 [cited by applicant]
US 20090068773A1 · Lai et al. · 2009 [cited by applicant]
US 20090073325A1 · Kuwabara et al. · 2009 [cited by applicant]
US 20090114910A1 · Chang · 2009 [cited by applicant]
US 20090134389A1 · Matsunaga · 2009 [cited by applicant]
US 20090134399A1 · Sakakura et al. · 2009 [cited by applicant]
US 20090152506A1 · Umeda et al. · 2009 [cited by applicant]
US 20090152541A1 · Maekawa et al. · 2009 [cited by applicant]
US 20090278120A1 · Lee et al. · 2009 [cited by applicant]
US 20090278122A1 · Hosono et al. · 2009 [cited by applicant]
US 20090280600A1 · Hosono et al. · 2009 [cited by applicant]
US 20090289328A1 · Tanioku · 2009 [cited by examiner]
US 20100009314A1 · Tardieu et al. · 2010 [cited by applicant]
US 20100025677A1 · Yamazaki et al. · 2010 [cited by applicant]
US 20100051949A1 · Yamazaki et al. · 2010 [cited by applicant]
US 20100065844A1 · Tokunaga · 2010 [cited by applicant]
US 20100092800A1 · Itagaki et al. · 2010 [cited by applicant]
US 20100108502A1 · Inoue et al. · 2010 [cited by applicant]
US 20100109002A1 · Itagaki et al. · 2010 [cited by applicant]
US 20100173106A1 · Lecraz · 2010 [cited by applicant]
US 20100320458A1 · Umeda. et al. · 2010 [cited by applicant]
US 20100320459A1 · Umeda et al. · 2010 [cited by applicant]
US 20110062436A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110080774A1 · Saito et al. · 2011 [cited by applicant]
US 20110084264A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110101333A1 · Shionoiri et al. · 2011 [cited by applicant]
US 20110101334A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110108836A1 · Koyama et al. · 2011 [cited by applicant]
US 20110114480A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110114944A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110114999A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110121285A1 · Yamazaki · 2011 [cited by examiner]
US 20110124153A1 · Hosoba · 2011 [cited by examiner]
US 20110127521A1 · Yamazaki · 2011 [cited by applicant]
US 20110127579A1 · Yamazaki · 2011 [cited by applicant]
US 20110151618A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110168994A1 · Kawashima et al. · 2011 [cited by applicant]
US 20110180392A1 · Yano et al. · 2011 [cited by applicant]
US 20110198594A1 · Yamazaki · 2011 [cited by applicant]
US 20110244652A1 · Yamazaki et al. · 2011 [cited by applicant]
US 20110256684A1 · Iwasaki et al. · 2011 [cited by applicant]
US 20110260118A1 · Yano et al. · 2011 [cited by applicant]
US 20110275032A1 · Tardieu et al. · 2011 [cited by applicant]
US 20110284848A1 · Yamazaki · 2011 [cited by applicant]
US 20120012847A1 · Koyama et al. · 2012 [cited by applicant]
US 20120032162A1 · Matsubayashi · 2012 [cited by applicant]
US 20120037972A1 · Yoneda · 2012 [cited by examiner]
US 20120049183A1 · Yamazaki · 2012 [cited by applicant]
US 20120052606A1 · Yamazaki · 2012 [cited by applicant]
US 20120052624A1 · Yamazaki · 2012 [cited by applicant]
US 20120058366A1 · Iwahori et al. · 2012 [cited by applicant]
US 20120061652A1 · Sugisawa · 2012 [cited by examiner]
US 20120061663A1 · Yamazaki et al. · 2012 [cited by applicant]
US 20120093712A1 · Yano et al. · 2012 [cited by applicant]
US 20120193759A1 · Takemura · 2012 [cited by examiner]
US 20120223304A1 · Yoneda · 2012 [cited by examiner]
US 20120231559A1 · Umezu et al. · 2012 [cited by applicant]
US 20120319100A1 · Yoshioka et al. · 2012 [cited by applicant]
US 20120325650A1 · Yamazaki et al. · 2012 [cited by applicant]
US 20130285053A1 · Kawashima et al. · 2013 [cited by applicant]
US 20130341180A1 · Yamazaki · 2013 [cited by applicant]
US 20140001040A1 · Inoue et al. · 2014 [cited by applicant]
US 20140021036A1 · Yamazaki · 2014 [cited by applicant]
US 20140042018A1 · Yamazaki · 2014 [cited by applicant]
US 20140291668A1 · Morosawa · 2014 [cited by applicant]
US 20140339073A1 · Inoue et al. · 2014 [cited by applicant]
US 20140357018A1 · Akimoto et al. · 2014 [cited by applicant]
US 20150048363A1 · Yamazaki et al. · 2015 [cited by applicant]
US 20150179675A1 · Yamazaki et al. · 2015 [cited by applicant]
US 20170016108A1 · Yamazaki et al. · 2017 [cited by applicant]
US 20180226510A1 · Yamazaki et al. · 2018 [cited by applicant]
US 20210020784A1 · Yano et al. · 2021 [cited by applicant]
US 20210358766A1 · Yamazaki et al. · 2021 [cited by applicant]
CN 101587840A · 2009 [cited by applicant]
CN 101680081A · 2010 [cited by applicant]
CN 101845615A · 2010 [cited by applicant]
DE 102007047146 · 2008 [cited by applicant]
EP 0486182A · 1992 [cited by applicant]
EP 0686982A · 1995 [cited by applicant]
EP 0757116A · 1997 [cited by applicant]
EP 0869563A · 1998 [cited by applicant]
EP 1737044A · 2006 [cited by applicant]
EP 2061086A · 2009 [cited by applicant]
EP 2096188A · 2009 [cited by applicant]
EP 2226847A · 2010 [cited by applicant]
EP 2256814A · 2010 [cited by applicant]
EP 2439309A · 2012 [cited by applicant]
EP 2471972A · 2012 [cited by applicant]
EP 2544237A · 2013 [cited by applicant]
EP 2669402A · 2013 [cited by applicant]
EP 3217435A · 2017 [cited by applicant]
EP 3249698A · 2017 [cited by applicant]
EP 3540772A · 2019 [cited by applicant]
JP 60198861A · 1985 [cited by applicant]
JP 62122011A · 1987 [cited by applicant]
JP 63210022A · 1988 [cited by applicant]
JP 63210023A · 1988 [cited by applicant]
JP 63210024A · 1988 [cited by applicant]
JP 63215519A · 1988 [cited by applicant]
JP 63239117A · 1988 [cited by applicant]
JP 63265818A · 1988 [cited by applicant]
JP 02053239A · 1990 [cited by applicant]
JP 04104937A · 1992 [cited by applicant]
JP 05251705A · 1993 [cited by applicant]
JP 06088218A · 1994 [cited by applicant]
JP 06275697A · 1994 [cited by applicant]
JP 06340468A · 1994 [cited by applicant]
JP 07031950B · 1995 [cited by applicant]
JP 07333438A · 1995 [cited by applicant]
JP 08245220A · 1996 [cited by applicant]
JP 08264794A · 1996 [cited by applicant]
JP 08311643A · 1996 [cited by applicant]
JP 10045496A · 1998 [cited by applicant]
JP 11505377 · 1999 [cited by applicant]
JP 11286002A · 1999 [cited by applicant]
JP 2000044236A · 2000 [cited by applicant]
JP 2000150900A · 2000 [cited by applicant]
JP 2002076356A · 2002 [cited by applicant]
JP 2002165221A · 2002 [cited by applicant]
JP 2002265221A · 2002 [cited by applicant]
JP 2002289859A · 2002 [cited by applicant]
JP 2003041362A · 2003 [cited by applicant]
JP 2003086000A · 2003 [cited by applicant]
JP 2003086808A · 2003 [cited by applicant]
JP 2003193231A · 2003 [cited by applicant]
JP 2003529711 · 2003 [cited by applicant]
JP 2004103957A · 2004 [cited by applicant]
JP 2004273614A · 2004 [cited by applicant]
JP 2004273732A · 2004 [cited by applicant]
JP 3569885 · 2004 [cited by applicant]
JP 2005518834 · 2005 [cited by applicant]
JP 2006165528A · 2006 [cited by applicant]
JP 2006287084A · 2006 [cited by applicant]
JP 2007073312A · 2007 [cited by applicant]
JP 2007514865 · 2007 [cited by applicant]
JP 2007201437A · 2007 [cited by applicant]
JP 2007250983A · 2007 [cited by applicant]
JP 2008135520A · 2008 [cited by applicant]
JP 2008163441A · 2008 [cited by applicant]
JP 2008214697A · 2008 [cited by applicant]
JP 2009057605A · 2009 [cited by applicant]
JP 2009141341A · 2009 [cited by applicant]
JP 2009167095A · 2009 [cited by applicant]
JP 2009533884 · 2009 [cited by applicant]
JP 2009231664A · 2009 [cited by applicant]
JP 2009275272A · 2009 [cited by applicant]
JP 2010018457A · 2010 [cited by applicant]
JP 2010021170A · 2010 [cited by applicant]
JP 2010070418A · 2010 [cited by applicant]
JP 2010080954A · 2010 [cited by applicant]
JP 2010103451A · 2010 [cited by applicant]
JP 2010177431A · 2010 [cited by applicant]
JP 2010206214A · 2010 [cited by applicant]
JP 2010212326A · 2010 [cited by applicant]
JP 2010531059 · 2010 [cited by applicant]
JP 2011029238A · 2011 [cited by applicant]
JP 2011058012A · 2011 [cited by applicant]
JP 2011084765A · 2011 [cited by applicant]
JP 2011086923A · 2011 [cited by applicant]
JP 2011097033A · 2011 [cited by applicant]
JP 2011100979A · 2011 [cited by applicant]
JP 2011105563A · 2011 [cited by applicant]
JP 2011106002A · 2011 [cited by applicant]
JP 2011179056A · 2011 [cited by applicant]
JP 5194193 · 2013 [cited by applicant]
KR 20060056399A · 2006 [cited by applicant]
KR 20070087226A · 2007 [cited by applicant]
KR 20090122391A · 2009 [cited by applicant]
KR 20110010799A · 2011 [cited by applicant]
KR 20110015381A · 2011 [cited by applicant]
KR 20110022538A · 2011 [cited by applicant]
KR 20110027805A · 2011 [cited by applicant]
KR 20110053978A · 2011 [cited by applicant]
KR 20110058693A · 2011 [cited by applicant]
TW 201115741 · 2011 [cited by applicant]
WO WO2001075284 · 2001 [cited by applicant]
WO WO2004114391 · 2004 [cited by applicant]
WO WO2005033355 · 2005 [cited by applicant]
WO WO2006101450 · 2006 [cited by applicant]
WO WO2007119386 · 2007 [cited by applicant]
WO WO2007120010 · 2007 [cited by applicant]
WO WO2008114588 · 2008 [cited by applicant]
WO WO2008156311 · 2008 [cited by applicant]
WO WO2008156312 · 2008 [cited by applicant]
WO WO2009142289 · 2009 [cited by applicant]
WO WO2009148154 · 2009 [cited by applicant]
WO WO2009157535 · 2009 [cited by applicant]
WO WO2011033936 · 2011 [cited by applicant]
WO WO2011043176 · 2011 [cited by applicant]
WO WO2012169449 · 2012 [cited by applicant]
Kobayashi.M et al., “InGaZnO TFT Deposition Technology for Large Substrates”, ULVAC Technical Journal, 2010, No. 73E, pp. 10-17. [cited by applicant]
Ogawa.N et al., “Study of ZAO Targets—Effect of Target Crystallographic Orientation-”, Journal of TOSOH Research, Jul. 1, 1992, vol. 36, No. 2, pp. 161-166. [cited by applicant]
International Search Report (Application No. PCT/JP2012/064341) Dated Aug. 28, 2012. [cited by applicant]
Written Opinion (Application No. PCT/JP2012/064341) Dated Aug. 28, 2012. [cited by applicant]
Notification (Application No. 2012-272630) Dated Sep. 10, 2013. [cited by applicant]
Information Offer Form (Application No. 2012-272630) Dated Aug. 15, 2013. [cited by applicant]
Taiwanese Office Action (Application No. 102114229) Dated Aug. 22, 2013. [cited by applicant]
Yamazaki.S et al., “Research, Development, and Application of Crystalline Oxide Semiconductor”, SID Digest '12 : SID International Symposium Digest of Technical Papers, Jun. 5, 2012, vol. 43, No. 1, pp. 183-186. [cited by applicant]
Silva.J et al., “Rules of Structure Formation for the Homologous InMO3(ZnO)n Compounds”, Phys. Rev. Lett. (Physical Review Letters), Jun. 27, 2008, vol. 100, pp. 255501-1-255501-4. [cited by applicant]
Yan.Y et al., “Polytypoid structures in annealed In2O3.ZnO films”, Appl. Phys. Lett. (Applied Physics Letters) , Nov. 2, 1998, vol. 73, No. 18, pp. 2585-2587. [cited by applicant]
Japanese Office Action (Application No. 2012-123954) Dated Dec. 3, 2013. [cited by applicant]
Asakuma.N et al., “Crystallization and Reduction of Sol-Gel-Derived Zinc Oxide Films by Irradiation With Ultraviolet Lamp”, Journal of Sol-Gel Science and Technology, 2003, vol. 26, pp. 181-184. [cited by applicant]
Asaoka.Y et al., “29.1: Polarizer-Free Reflective LCD Combined With Ultra Low-Power Driving Technology”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 395-398. [cited by applicant]
Chern.H et al., “An Analytical Model for the Above-Threshold Characteristics of Polysilicon Thin-Film Transistors”, IEEE Transactions on Electron Devices, Jul. 1, 1995, vol. 42, No. 7, pp. 1240-1246. [cited by applicant]
Cho.D et al., “21.2:AL and Sn-Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back-Plane”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 280-283. [cited by applicant]
Clark.S et al., “First Principles Methods Using CASTEP”, Zeitschrift fur Kristallographie, 2005, vol. 220, pp. 567-570. [cited by applicant]
Coates.D et al., “Optical Studies of the Amorphous Liquid-Cholesteric Liquid Crystal Transition: the “Blue Phase””, Physics Letters, Sep. 10, 1973, vol. 45A, No. 2, pp. 115-116. [cited by applicant]
Costello.M et al., “Electron Microscopy of a Cholesteric Liquid Crystal and Its Blue Phase”, Phys. Rev. A (Physical Review. A), May 1, 1984, vol. 29, No. 5, pp. 2957-2959. [cited by applicant]
Dembo.H et al., “RFCPUS on Glass and Plastic Substrates Fabricated by TFT Transfer Technology”, IEDM 05: Technical Digest of International Electron Devices Meeting, Dec. 5, 2005, pp. 1067-1069. [cited by applicant]
Fortunato.E et al., “Wide-Bandgap High-Mobility ZnO Thin-Film Transistors Produced at Room Temperature”, Appl. Phys. Lett. (Applied Physics Letters) , Sep. 27, 2004, vol. 85, No. 13, pp. 2541-2543. [cited by applicant]
Fung.T et al., “2-D Numerical Simulation of High Performance Amorphous In—Ga—Zn—O TFTs for Flat Panel Displays”, AM-FPD '08 Digest of Technical Papers, Jul. 2, 2008, pp. 251-252, The Japan Society of Applied Physics. [cited by applicant]
Godo.H et al., “P-9:Numerical Analysis on Temperature Dependence of Characteristics of Amorphous In—Ga—Zn-Oxide TFT”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 1110-1112. [cited by applicant]
Godo.H et al., “Temperature Dependence of Characteristics and Electronic Structure for Amorphous In—Ga—Zn-Oxide TFT”, AM-FPD '09 Digest of Technical Papers, Jul. 1, 2009, pp. 41-44. [cited by applicant]
Hayashi.R et al., “42.1: Invited Paper: Improved Amorphous In—Ga—Zn—O TFTs”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 621-624. [cited by applicant]
Hirao.T et al., “Novel Top-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AMLCDs”, J. Soc. Inf. Display (Journal of the Society for Information Display), 2007, vol. 15, No. 1, pp. 17-22. [cited by applicant]
Hosono.H et al., “Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples”, J. Non-Cryst. Solids (Journal of Non-Crystalline Solids), 1996, vol. 198-200, pp. 165-169. [cited by applicant]
Hosono.H, “68.3:Invited Paper:Transparent Amorphous Oxide Semiconductors for High Performance TFT”, SID Digest '07 : SID International Symposium Digest of Technical Papers, 2007, vol. 38, pp. 1830-1833. [cited by applicant]
Hsieh.H et al., “P-29: Modeling of Amorphous Oxide Semiconductor Thin Film Transistors and Subgap Density of States”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 1… [cited by applicant]
Ikeda.T et al., “Full-Functional System Liquid Crystal Display Using Cg-Silicon Technology”, SID Digest '04 : SID International Symposium Digest of Technical Papers, 2004, vol. 35, pp. 860-863. [cited by applicant]
Janotti.A et al., “Native Point Defects in ZnO”, Phys. Rev. B (Physical Review. B), Oct. 4, 2007, vol. 76, No. 16, pp. 165202-1-165202-22. [cited by applicant]
Janotti.A et al., “Oxygen Vacancies in ZnO”, Appl. Phys. Lett. (Applied Physics Letters) , 2005, vol. 87, pp. 122102-1-122102-3. [cited by applicant]
Jeong.J et al., “3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, N… [cited by applicant]
Jin.D et al., “65.2: Distinguished Paper: World-Largest (6.5″) Flexible Full Color Top Emission AMOLED Display on Plastic Film and Its Bending Properties”, SID Digest '09 : SID International Symposium Digest of Technica… [cited by applicant]
Kanno.H et al., “White Stacked Electrophosphorecent Organic Light-Emitting Devices Employing MOO3 as a Charge-Generation Layer”, Adv. Mater. (Advanced Materials), 2006, vol. 18, No. 3, pp. 339-342. [cited by applicant]
Kikuchi.H et al., “39.1:Invited Paper:Optically Isotropic Nano-Structured Liquid Crystal Composites for Display Applications”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 5… [cited by applicant]
Kikuchi.H et al., “62.2:Invited Paper:Fast Electro-Optical Switching in Polymer-Stabilized Liquid Crystalline Blue Phases for Display Application”, SID Digest '07 : SID International Symposium Digest of Technical Papers… [cited by applicant]
Kikuchi.H et al., “Polymer-Stabilized Liquid Crystal Blue Phases”, Nature Materials, Sep. 2, 2002, vol. 1, pp. 64-68. [cited by applicant]
Kim.S et al., “High-Performance oxide thin film transistors passivated by various gas plasmas”, 214th ECS Meeting, 2008, No. 2317, ECS. [cited by applicant]
Kimizuka.N et al., “SPINEL, YBFe2O4, and YB2Fe3O7 Types of Structures for Compounds in the In2O3 and SC2O3—A2O3—BO Systems [A; Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at Temperatures Over 1000° C.”, Journal of Soli… [cited by applicant]
Kimizuka.N et al., “Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m = 3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m = 7, 8, 9, and 16) in the In2O3—ZnGa2O4—ZnO System”, Journal of Solid State … [cited by applicant]
Kitzerow.H et al., “Observation of Blue Phases in Chiral Networks”, Liquid Crystals, 1993, vol. 14, No. 3, pp. 911-916. [cited by applicant]
Kurokawa.Y et al., “UHF RFCPUS on Flexible and Glass Substrates for Secure RFID Systems”, Journal of Solid-State Circuits , 2008, vol. 43, No. 1, pp. 292-299. [cited by applicant]
Lany.S et al., “Dopability, Intrinsic Conductivity, and Nonstoichiometry of Transparent Conducting Oxides”, Phys. Rev. Lett. (Physical Review Letters), Jan. 26, 2007, vol. 98, pp. 045501-1-045501-4. [cited by applicant]
Lee.H et al., “Current Status of, Challenges to, and Perspective View of AM-OLED”, IDW '06 : Proceedings of the 13th International Display Workshops, Dec. 7, 2006, pp. 663-666. [cited by applicant]
Lee.J et al., “World's Largest (15-Inch) XGA AMLCD Panel Using IGZO Oxide TFT”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 625-628. [cited by applicant]
Lee.M et al., “15.4: Excellent Performance of Indium-Oxide-Based Thin-Film Transistors by DC Sputtering”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 191-193. [cited by applicant]
Li.C et al., “Modulated Structures of Homologous Compounds InMO3(ZnO)m (M=In,Ga; m=Integer) Described by Four-Dimensional Superspace Group”, Journal of Solid State Chemistry, 1998, vol. 139, pp. 347-355, Elsevier. [cited by applicant]
Masuda.S et al., “Transparent thin film transistors using ZnO as an active channel layer and their electrical properties”, J. Appl. Phys. (Journal of Applied Physics) , Feb. 1, 2003, vol. 93, No. 3, pp. 1624-1630. [cited by applicant]
Meiboom.S et al., “Theory of the Blue Phase of Cholesteric Liquid Crystals”, Phys. Rev. Lett. (Physical Review Letters), May 4, 1981, vol. 46, No. 18, pp. 1216-1219. [cited by applicant]
Miyasaka.M, “Suftla Flexible Microelectronics on Their Way to Business”, SID Digest '07 : SID International Symposium Digest of Technical Papers, 2007, vol. 38, pp. 1673-1676. [cited by applicant]
Mo.Y et al., “Amorphous Oxide TFT Backplanes for Large Size AMOLED Displays”, IDW '08 : Proceedings of the 6th International Display Workshops, Dec. 3, 2008, pp. 581-584. [cited by applicant]
Nakamura.M et al., “The phase relations in the In2O3—Ga2ZnO4—ZnO system at 1350° C.”, Journal of Solid State Chemistry, Aug. 1, 1991, vol. 93, No. 2, pp. 298-315, Elsevier. [cited by applicant]
Nakamura.M, “Synthesis of Homologous Compound with New Long-Period Structure”, Nirim Newsletter, Mar. 1, 1995, vol. 150, pp. 1-4. [cited by applicant]