Solid-state image pickup apparatus and image pickup system
An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.
1. A photoelectric conversion apparatus comprising:
a first semiconductor substrate including a photoelectric conversion element;
a second semiconductor substrate including a source region and a drain region of a transistor, the transistor having a gate electrode disposed between the first semiconductor substrate and the second semiconductor substrate;
an insulating layer disposed between the first semiconductor substrate and the second semiconductor substrate; and
a silicide which is provided on at least one of the gate electrode, the drain region and the source region of the transistor.
2. The photoelectric conversion apparatus according to claim 1 , further comprising:
a first contact plug disposed between the first semiconductor substrate and the second semiconductor substrate,
wherein
the silicide includes a first portion and a second portion,
the first portion of the silicide is disposed between the first contact plug and the at least one of the gate electrode, the drain region and the source region of the transistor, and
the second portion of the silicide is disposed between a part of the insulating layer and the at least one of the gate electrode, the drain region and the source region of the transistor.
3. The photoelectric conversion apparatus according to claim 2 , wherein
the first portion and the second portion of the silicide are arranged along a surface of the second semiconductor substrate, and
the first contact plug and the part of the insulating layer are arranged along the surface of the second semiconductor substrate.
4. The photoelectric conversion apparatus according to claim 2 , further comprising:
a semiconductor region included in the first semiconductor substrate; and
a transfer gate electrode disposed between the first semiconductor substrate and the second semiconductor substrate and configured to transfer a charge generated in the photoelectric conversion element to the semiconductor region.
5. The photoelectric conversion apparatus according to claim 4 , further comprising:
a second contact plug connected to the semiconductor region; and
a connection portion including at least two wiring layers, and being disposed between the first semiconductor substrate and the second semiconductor substrate,
wherein the semiconductor region is electrically connected to the transistor via the first contact plug, the connection portion and the second contact plug.
6. The photoelectric conversion apparatus according to claim 5 , further comprising:
a microlens,
wherein the first semiconductor substrate has a first side and a second side, the first side is opposite to the second side, and the second side faces the second semiconductor substrate, and
wherein the microlens is disposed on the first side of the first semiconductor substrate.
7. The photoelectric conversion apparatus according to claim 6 , further comprising:
a light shielding film provided on the first side of the first semiconductor substrate,
wherein the light shielding film is patterned.
8. The photoelectric conversion apparatus according to claim 4 , further comprising:
a second contact plug connected to the semiconductor region;
a first wiring layer disposed between the first semiconductor substrate and the second semiconductor substrate; and
a connection portion including at least two wiring layers, and being disposed between the first semiconductor substrate and the second semiconductor substrate,
wherein the semiconductor region is electrically connected to the connection portion at least via the second contact plug and the first wiring layer.
9. The photoelectric conversion apparatus according to claim 4 , further comprising:
an amplification transistor electrically connected to the semiconductor region and provided in the first semiconductor substrate.
10. The photoelectric conversion apparatus according to claim 9 , wherein the amplification transistor is a portion of a source follower circuit.
11. The photoelectric conversion apparatus according to claim 9 , further comprising:
a microlens,
wherein the first semiconductor substrate has a first side and a second side, the first side is opposite to the second side, and the second side faces the second semiconductor substrate, and
wherein the microlens is disposed on the first side of the first semiconductor substrate.
12. The photoelectric conversion apparatus according to claim 11 , further comprising:
a light shielding film provided on the first side of the first semiconductor substrate,
wherein the light shielding film is patterned.
13. The photoelectric conversion apparatus according to claim 4 , wherein a part of the semiconductor region is in contact with the insulating layer.
14. The photoelectric conversion apparatus according to claim 13 , wherein a silicide is not formed on the semiconductor region.
15. The photoelectric conversion apparatus according to claim 13 , wherein no metal is in contact with a surface of the first semiconductor substrate except for regions where contact plugs are provided.
16. The photoelectric conversion apparatus according to claim 9 ,
wherein
the amplification transistor includes a drain region and a source region, and
a part of the drain region of the amplification transistor is in contact with the insulating layer.
17. The photoelectric conversion apparatus according to claim 16 , wherein a silicide is not formed on the drain region of the amplification transistor.
18. The photoelectric conversion apparatus according to claim 16 , wherein no metal is in contact with a surface of the first semiconductor substrate except for regions where contact plugs are provided.
19. The photoelectric conversion apparatus according to claim 2 , further comprising:
a light shielding film,
wherein the first semiconductor substrate has a first side and a second side, the first side is opposite to the second side, and the second side faces the second semiconductor substrate, and
wherein the light shielding film is provided on a first side of the first semiconductor substrate.
20. The photoelectric conversion apparatus according to claim 19 ,
wherein
the silicide includes a first metal, and
the light shielding film includes a second metal different from the first metal.
21. The photoelectric conversion apparatus according to claim 19 ,
wherein
the silicide includes a cobalt, and
the light shielding film includes a tungsten.
22. The photoelectric conversion apparatus according to claim 20 , further comprising:
a microlens disposed on the first side of the first semiconductor substrate.
23. The photoelectric conversion apparatus according to claim 2 , further comprising:
a scan circuit provided in the second semiconductor substrate and including the transistor.
24. The photoelectric conversion apparatus according to claim 4 , wherein the transistor is configured to supply a signal to the transfer gate electrode.
25. The photoelectric conversion apparatus according to claim 4 , further comprising:
a scan circuit provided in the second semiconductor substrate and including the transistor,
wherein the scan circuit is configured to supply a signal to the transfer gate electrode.
26. The photoelectric conversion apparatus according to claim 25 , wherein a surface of the transfer gate electrode is in contact with the insulating layer, the surface of the transfer gate electrode facing the second semiconductor substrate.
27. The photoelectric conversion apparatus according to claim 26 , wherein a silicide is not formed on the surface of the transfer gate electrode.
28. The photoelectric conversion apparatus according to claim 2 , further comprising:
a third substrate,
wherein the second semiconductor substrate is arranged between the first semiconductor substrate and the third substrate.
29. The photoelectric conversion apparatus according to claim 28 , wherein the third substrate is a supporting substrate.
30. The photoelectric conversion apparatus according to claim 4 , further comprising:
a third substrate,
wherein the second semiconductor substrate is arranged between the first semiconductor substrate and the third substrate.
31. The photoelectric conversion apparatus according to claim 9 , further comprising:
a third substrate,
wherein the second semiconductor substrate is arranged between the first semiconductor substrate and the third substrate.
32. The photoelectric conversion apparatus according to claim 13 , further comprising:
a third substrate,
wherein the second semiconductor substrate is arranged between the first semiconductor substrate and the third substrate.
33. The photoelectric conversion apparatus according to claim 16 , further comprising:
a third substrate,
wherein the second semiconductor substrate is arranged between the first semiconductor substrate and the third substrate.
34. The photoelectric conversion apparatus according to claim 25 , further comprising:
a third substrate,
wherein the second semiconductor substrate is arranged between the first semiconductor substrate and the third substrate.
35. The photoelectric conversion apparatus according to claim 2 , further comprising:
an AD conversion circuit provided in the second semiconductor substrate and including the transistor.
36. The photoelectric conversion apparatus according to claim 9 , further comprising:
an AD conversion circuit provided in the second semiconductor substrate and including the transistor,
wherein the AD conversion circuit is configured to process a signal output by the amplification transistor.
37. The photoelectric conversion apparatus according to claim 36 ,
wherein
the amplification transistor includes a drain region and a source region, and
a part of the drain region of the amplification transistor is in contact with the insulating layer.
38. The photoelectric conversion apparatus according to claim 2 , further comprising:
a first element isolation region provided in the first semiconductor substrate; and
a second element isolation region provided in the second semiconductor substrate.
39. The photoelectric conversion apparatus according to claim 38 ,
wherein
the first element isolation region has a first length in a direction toward which the first semiconductor substrate and the second semiconductor substrate are arranged,
the second element isolation region has a second length in the direction, and
the first length is larger than the second length.
40. The photoelectric conversion apparatus according to claim 39 , wherein the first element isolation region includes a P-type semiconductor region and an insulator.
41. The photoelectric conversion apparatus according to claim 39 ,
wherein
the first element isolation region extends from one side of the first semiconductor substrate to another side of the first semiconductor substrate, and
the first element isolation region reaches both side of the first semiconductor substrate.
42. The photoelectric conversion apparatus according to claim 41 , wherein a silicide is not formed on the first element isolation region.
43. The photoelectric conversion apparatus according to claim 9 , further comprising:
a first element isolation region provided in the first semiconductor substrate; and
a second element isolation region provided in the second semiconductor substrate.
44. The photoelectric conversion apparatus according to claim 43 ,
wherein
the first element isolation region has a first length in a direction toward which the first semiconductor substrate and the second semiconductor substrate are arranged,
the second element isolation region has a second length in the direction, and
the first length is larger than the second length.
45. The photoelectric conversion apparatus according to claim 44 , wherein the first element isolation region includes a P-type semiconductor region and an insulator.
46. The photoelectric conversion apparatus according to claim 44 ,
wherein
the first element isolation region extends from one side of the first semiconductor substrate to another side of the first semiconductor substrate, and
the first element isolation region reaches both side of the first semiconductor substrate.
47. The photoelectric conversion apparatus according to claim 46 , wherein a silicide is not formed on the first element isolation region.
48. The photoelectric conversion apparatus according to claim 47 ,
wherein
the amplification transistor includes a drain region and a source region, and
a part of the drain region of the amplification transistor is in contact with the insulating layer.
49. The photoelectric conversion apparatus according to claim 48 , wherein a silicide is not formed on the drain region of the amplification transistor.
50. The photoelectric conversion apparatus according to claim 2 , further comprising:
multilayers of wiring layers provided between the first semiconductor substrate and the second semiconductor substrate.
51. The photoelectric conversion apparatus according to claim 50 , wherein the multilayers of wiring layers are formed of copper.
52. The photoelectric conversion apparatus according to claim 51 , wherein the insulating layer includes a diffusion prevention film configured to prevent and/or suppress diffusion of a metal.
53. The photoelectric conversion apparatus according to claim 52 , wherein the diffusion prevention film is used as an etching stop layer.
54. The photoelectric conversion apparatus according to claim 52 , wherein the diffusion prevention film includes a silicon nitride or a silicon carbide.
55. The photoelectric conversion apparatus according to claim 52 , wherein the diffusion prevention film is patterned.
56. A system comprising:
the photoelectric conversion apparatus according to claim 2 ; and
a lens which forms an optical image on the photoelectric conversion apparatus.
57. A system comprising:
the photoelectric conversion apparatus according to claim 2 ; and
a signal processing apparatus that processes a signal output from the photoelectric conversion apparatus.