Semiconductor component and manufacturing method thereof
A semiconductor component including: a semiconductor substrate; and a semiconductor device provided thereon, the device being a field-effect transistor that includes: a gate insulating film provided on the substrate; a gate electrode provided via the film; and a pair of source-drain regions provided to sandwich the electrode, the substrate including a patterned surface in a portion where the electrode is provided, the patterned surface of the substrate including a raised portion where the film is formed to cover a surface that lies on the same plane as a surface of the pair of source-drain regions, and the electrode is formed on a top surface of the film, and the patterned surface of the substrate including a recessed portion where the film is formed to cover surfaces of a groove formed toward the interior than the surface of the pair of source-drain regions, and the electrode is formed so as to fill the groove provided with the film.
1. A semiconductor device comprising:
a substrate; and
a transistor including a gate insulating film, a gate electrode, a first source-drain region and a second source-drain region,
wherein in a first cross section along a first direction, the gate electrode is formed above the gate insulating film along a patterned surface of the substrate, the patterned surface including periodic raised portions and recessed portions,
wherein in a second cross section along a second direction perpendicular to the first direction, at a location of one of the raised portions, a first portion of a channel between the first source-drain region and the second source-drain region has a first length,
in a third cross section along the second direction, at a location of one of the recessed portions, the recessed portion extends into the substrate between the first source-drain region and the second source-drain region, such that a second portion of the channel has a second length that is longer than the first length.
2. The semiconductor device according to claim 1 , wherein in the first cross section, the one of the recessed portions is formed in a groove that extends into the substrate, the groove having a pair of sidewalls extending between the one of the recessed portions and adjacent ones of the raised portions.
3. The semiconductor device according to claim 2 , wherein the sidewalls extend in a depth direction of the substrate.
4. The semiconductor device according to claim 2 , wherein the sidewalls are slanted with respect to a depth direction of the substrate.
5. The semiconductor device according to claim 1 , further comprising a planarizing film formed above the first and second source-drain regions and having an upper surface at a same level as an upper surface of the gate electrode.