Three-dimensional memory device containing horizontal and vertical word line interconnections and methods of forming the same
A method of forming a three-dimensional memory device includes forming a vertically alternating sequence of insulating layers and spacer material layers over a substrate, where the spacer material layers are formed as, or are subsequently replaced with, electrically conductive layers, forming multiple sets of stepped surfaces in terrace regions of the vertically alternating sequence, forming memory stack structures through memory array regions of the vertically alternating sequence, and forming a metal interconnect structure which electrically connects a portion of a topmost electrically conductive layer in the first memory array region and a portion of a topmost electrically conductive layer in the second memory array region, and which extends above a horizontal plane of the topmost electrically conductive layer in the first memory array region and a portion of a topmost electrically conductive layer in the second memory array region.
1. A method of forming a three-dimensional memory device, comprising:
forming a vertically alternating sequence of insulating layers and spacer material layers over a substrate, wherein the spacer material layers are formed as, or are subsequently replaced with, electrically conductive layers;
forming multiple sets of stepped surfaces in terrace regions of the vertically alternating sequence by iteratively performing a set of layer patterning processing steps at least twice, wherein the set of layer patterning processing steps comprises a patterned photoresist material layer formation step in which a respective patterned photoresist material layer with a respective array of openings therein is formed over the vertically alternating sequence, and a pattern transfer step in which a pattern in the respective patterned photoresist material layer is transferred through a respective number of layers within the vertically alternating sequence;
forming a dielectric material portion on each of the multiple sets of stepped surfaces of the vertically alternating sequence in each of the terrace regions;
forming memory stack structures through memory array regions of the vertically alternating sequence in which all layers of the vertically alternating sequence are present; and
forming a metal interconnect structure which electrically connects a portion of a topmost electrically conductive layer in the first memory array region and a portion of a topmost electrically conductive layer in the second memory array region, and which extends above a horizontal plane of the topmost electrically conductive layer in the first memory array region and the portion of the topmost electrically conductive layer in the second memory array region;
wherein:
a portion of each respective lower electrically conductive layer in the first memory array region and a portion of each respective lower electrically conductive layer in the second memory array region are electrically connected by a respective electrically conductive region extending in an array interconnection region in a horizontal plane of each respective lower electrically conductive layer in the first memory array region and each respective lower electrically conductive layer in the second memory array region;
a hard mask is not used during the step of forming multiple sets of stepped surfaces in terrace regions; and
the topmost electrically conductive layer is disconnected into discrete portions located in the first memory array region and in the second memory array region and does not extend through the array interconnection region; and
wherein each set of stepped surfaces of the multiple sets of stepped surfaces comprises:
staircase region surfaces formed in a respective staircase region in which an average lateral spacing between neighboring pairs of vertical steps is greater than a sum of an average thickness of the insulating layers and an average thickness of the spacer material layers;
cliff region surfaces formed in a respective cliff region that is adjoined to a periphery of the respective staircase region, wherein an average lateral spacing between neighboring pairs of vertical steps in the cliff region is less than the sum of the average thickness of the insulating layers and the average thickness of the spacer material layers; and
a via contact region located over each cliff region surfaces.
2. The method of claim 1 , wherein:
stepped surfaces of the via contact region have a greater taper than the cliff region surfaces;
the metal interconnect structure contacts the topmost electrically conductive layer in the via contact region;
the respective cliff region and the respective staircase region are laterally spaced apart along a first horizontal direction;
a lateral extent of the respective staircase region along the first horizontal direction is at least five times a lateral extent of the respective cliff region;
the array interconnection region is adjoined to, and is laterally offset along a second horizontal direction from, the respective one of the staircase regions and the respective one of the cliff regions; and
the electrically conductive regions extending in an array interconnection region comprise portions of lower electrically conductive layers located in the array interconnection region which provide electrically conductive paths between the first memory array region and the second memory array region.
3. The method of claim 2 , further comprising dividing the vertically alternating sequence into a plurality of alternating stacks by forming line trenches that extend along the first horizontal direction through an entire thickness of the vertically alternating sequence, wherein each alternating stack of the plurality of alternating stacks comprises a respective one of the staircase regions and a respective one of the cliff regions.
4. The method of claim 3 , wherein each alternating stack comprises:
the first memory array region in which a respective first subset of the memory stack structures is formed and is more proximal to the respective one of the staircase regions than to the respective one of the cliff regions; and
the second memory array region in which a respective second subset of the memory stack structures is formed and is more proximal to the respective one of the cliff regions than to the respective one of the staircase regions.
5. The method of claim 1 , wherein the respective staircase region comprises:
at least one forward staircase area in which a vertical step of an overlying electrically conductive layer is more proximal to the first memory array region than a vertical step of an underlying electrically conductive layer is to the first memory array region for a vertically neighboring pair of electrically conductive layers; and
at least one reverse staircase area in which a vertical step of an overlying electrically conductive layer is less proximal to the first memory array region than a vertical step of an underlying electrically conductive layer is to the first memory array region for a vertically neighboring pair of electrically conductive layers.
6. The method of claim 1 , further comprising forming contact via structures directly on a top surface of a respective one of the electrically conductive layers in each of the staircase regions without forming any contact via structure in the cliff regions.