Method for producing nitride crystal and nitride crystal
A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 μm, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm 3 for the intended crystal growth.
1. An ammonothermally grown GaN crystal having n-type conductivity,
wherein
the crystal is n-type doped with oxygen such that a concentration of each dopant other than oxygen is lower than a concentration of oxygen,
the crystal comprises fluorine,
the crystal has a carrier concentration of from 8×10 17 to 2×10 19 cm −3 , and
the dopant other than oxygen comprises Si and a concentration of Si is at most 2×10 15 atoms/cm 3 .
2. The GaN crystal according to claim 1 , wherein the crystal has a carrier concentration of from 1×10 18 to 2×10 19 cm −3 .
3. The GaN crystal according to claim 1 , wherein the fluorine concentration is at most 1×10 18 atoms/cm 3 .
4. The ammonothermally grown GaN crystal of claim 1 , having resistivity of from 4.09×10 −3 to 2.40×10 −2 Ωcm.
5. A wafer comprising the GaN crystal according to claim 1 .
6. A device comprising the GaN crystal according to claim 1 .
7. The device according to claim 6 , wherein the device is a light-emitting element or an electronic element.
8. An ammonothermally grown GaN crystal having n-type conductivity,
wherein
the crystal is n-type doped with oxygen such that a concentration of each dopant other than oxygen is lower than a concentration of oxygen,
the crystal comprises fluorine,
the concentration of oxygen is from 1.1 to 10 times a carrier concentration of the crystal, and
the dopant other than oxygen comprises Si and a concentration of Si is at most 2×10 15 atoms/cm 3 .
9. The GaN crystal according to claim 8 , wherein the fluorine concentration is at most 1×10 18 atoms/cm 3 .
10. The ammonothermally grown GaN crystal of claim 8 , having resistivity of from 4.09×10 −3 to 2.40×10 −2 Ωcm.
11. A wafer, comprising:
the GaN crystal of claim 8 .
12. A device, comprising:
the GaN crystal of claim 8 .
13. The device according to claim 12 , wherein the device is a light-emitting element or an electronic element.
14. An ammonothermally grown GaN crystal having n-type conductivity, wherein
the crystal is n-type doped with oxygen such that a concentration of each dopant other than oxygen is lower than a concentration of oxygen,
the crystal comprises fluorine,
the crystal has a carrier concentration of from 6.7×10 17 to 9.54×10 18 atoms/cm 3 , and
the dopant other than oxygen comprises Si and a concentration of Si is at most 2×10 15 atoms/cm 3 .
15. The GaN crystal according to claim 14 , wherein the fluorine concentration is at most 1×10 18 atoms/cm 3 .
16. The ammonothermally grown GaN crystal of claim 14 , having resistivity of from 4.09×10 −3 to 2.40×10 −2 Ωcm.
17. A wafer, comprising:
the GaN crystal of claim 14 .
18. A device, comprising:
the GaN crystal of claim 14 .
19. The device according to claim 18 , wherein the device is a light-emitting element or an electronic element.