Solid-state imaging device and imaging apparatus
The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity.
1. An imaging device, comprising:
an organic photoelectric conversion portion, including:
a first electrode;
a second electrode; and
an organic photoelectric conversion layer disposed between the first electrode and the second electrode;
a photoelectric conversion region disposed in a substrate, the photoelectric conversion region overlapping the organic photoelectric conversion layer in a plan view, wherein the substrate comprises a first surface and a second surface, the first surface being disposed between the organic photoelectric conversion layer and the second surface;
a transistor disposed at the second surface, the transistor comprising a gate electrode, a part of the gate electrode being disposed in the substrate and overlapping the photoelectric conversion region in the plan view; and
a wiring layer disposed between the first electrode and the first surface, the wiring layer comprising a cross shape in cross-sectional view.
2. The imaging device according to claim 1 , further comprising a floating diffusion disposed at the second surface, the first electrode being electrically connected to the floating diffusion by at least the wiring layer.
3. The imaging device according to claim 2 , wherein the first electrode is electrically connected to the floating diffusion by at least the wiring layer and a part of the substrate.
4. The imaging device according to claim 3 , wherein the part of the substrate overlaps the wiring layer in a plan view.
5. The imaging device according to claim 1 , wherein the wiring layer comprises tungsten.
6. The imaging device according to claim 1 , wherein the wiring layer is a light shield.
7. The imaging device according to claim 1 , further comprising a second photoelectric conversion region disposed in the substrate, the second floating diffusion region at least partially overlapping the floating diffusion region and the organic photoelectric conversion layer in the plan view.
8. The imaging device according to claim 7 , wherein the transistor is a longitudinal transistor.
9. The imaging device according to claim 8 , wherein the organic photoelectric conversion layer absorbs green light, transmits blue light, and transmits red light.
10. The imaging device according to claim 1 , wherein, in the plan view, an area of the organic photoelectric conversion layer is greater than an area of the photoelectric conversion region.
11. An imaging apparatus, comprising:
an imaging device, including;
an organic photoelectric conversion portion, including:
a first electrode;
a second electrode; and
an organic photoelectric conversion layer disposed between the first electrode and the second electrode;
a photoelectric conversion region disposed in a substrate, the photoelectric conversion region overlapping the organic photoelectric conversion layer in a plan view, wherein the substrate comprises a first surface and a second surface, the first surface being disposed between the organic photoelectric conversion layer and the second surface;
a transistor disposed at the second surface, the transistor comprising a gate electrode, a part of the gate electrode being disposed in the substrate and overlapping the photoelectric conversion region in the plan view; and
a wiring layer disposed between the first electrode and the first surface, the wiring layer comprising a cross shape in cross-sectional view;
an optical lens; and
a signal processor.
12. The imaging apparatus according to claim 11 , further comprising a floating diffusion disposed at the second surface, the first electrode being electrically connected to the floating diffusion by at least the wiring layer.
13. The imaging apparatus according to claim 12 , wherein the first electrode is electrically connected to the floating diffusion by at least the wiring layer and a part of the substrate.
14. The imaging apparatus according to claim 13 , wherein the part of the substrate overlaps the wiring layer in a plan view.
15. The imaging apparatus according to claim 11 , wherein the wiring layer comprises tungsten.
16. The imaging apparatus according to claim 11 , wherein the wiring layer is a light shield.
17. The imaging apparatus according to claim 11 , further comprising a second photoelectric conversion region disposed in the substrate, the second floating diffusion region at least partially overlapping the floating diffusion region and the organic photoelectric conversion layer in the plan view.
18. The imaging apparatus according to claim 17 , wherein the transistor is a longitudinal transistor.
19. The imaging apparatus according to claim 18 , wherein the organic photoelectric conversion layer absorbs green light, transmits blue light, and transmits red light.
20. The imaging apparatus according to claim 11 , wherein, in the plan view, an area of the organic photoelectric conversion layer is greater than an area of the photoelectric conversion region.