Three-dimensional memory device containing a shared word line driver across different tiers and methods for making the same
A semiconductor structure includes a peripheral circuit, a first three-dimensional memory array overlying the peripheral circuit and including a first alternating stack of first insulating layers and first electrically conductive layers containing first word lines and first select lines, and first memory stack structures vertically extending through the first alternating stack, and a second three-dimensional memory array overlying the first three-dimensional memory array and including a second alternating stack of second insulating layers and second electrically conductive layers containing second word lines and second select lines, and second memory stack structures vertically extending through the second alternating stack. The peripheral circuit includes a first word line driver circuit having first word line driver output nodes electrically connected to at least some of the first word lines and at least some of the second word lines, and each first word line is electrically connected to a respective second word line.
1. A semiconductor structure, comprising:
a first peripheral circuit comprising field effect transistors and dielectric material layers embedding metal interconnect structures;
a first three-dimensional memory array overlying the first peripheral circuit and including a first alternating stack of first insulating layers and first electrically conductive layers comprising first word lines and first select lines, and first memory stack structures vertically extending through the first alternating stack; and
a second three-dimensional memory array overlying the first three-dimensional memory array and including a second alternating stack of second insulating layers and second electrically conductive layers comprising second word lines and second select lines, and second memory stack structures vertically extending through the second alternating stack,
wherein the first peripheral circuit comprises a first word line driver circuit having first word line driver output nodes electrically connected to at least some of the first word lines and at least some of the second word lines; and
wherein each first word line is electrically connected to a respective second word line.
2. The semiconductor structure of claim 1 , wherein each first word line driver output node within a subset of the first word line driver output nodes is electrically connected to a respective word line switching transistor, is electrically connected to a respective first word line, and is electrically connected to a respective second word line.
3. The semiconductor structure of claim 1 , wherein the first peripheral circuit further comprises a first select line driver circuit comprising:
first select line driver output nodes electrically connected to the first select lines and not electrically connected to any of the second electrically conductive layers; and
second selective line driver output nodes electrically connected to the second select lines and not electrically connected to any of the first electrically conductive layers.
4. The semiconductor structure of claim 3 , wherein the first select line driver output nodes comprise:
source-side select line driver output nodes electrically connected to source-side select lines of the first select lines; and
drain-side select line driver output nodes electrically connected to drain-side select lines of the first select lines.
5. The semiconductor structure of claim 1 , wherein:
each of the first memory stack structures comprises a respective first vertical semiconductor channel and a respective first vertical stack of memory elements; and
each of the second memory stack structures comprises a respective second vertical semiconductor channel and a respective second vertical stack of memory elements.
6. The semiconductor structure of claim 5 , wherein:
the first three-dimensional memory array further comprises first bit lines electrically connected to a first end of a respective subset of the first vertical semiconductor channels; and
the second three-dimensional memory array further comprises second bit lines electrically connected to a first end of a respective subset of the second vertical semiconductor channels.
7. The semiconductor structure of claim 6 , wherein the first peripheral circuit further comprises a first bit line driver circuit having first bit line driver output nodes electrically connected to a respective one of the first bit lines and to a respective one of the second bit lines.
8. The semiconductor structure of claim 1 , wherein:
the first peripheral circuit and the first three-dimensional memory array are located in a first semiconductor die; and
the second three-dimensional memory array is located in a second semiconductor die which is bonded to the first semiconductor die.
9. The semiconductor structure of claim 8 , wherein:
the first semiconductor die further comprises first dielectric material layers embedding first metal interconnect structures and first metal bonding pads; and
the second semiconductor die further comprises second dielectric material layers embedding second metal interconnect structures and second metal bonding pads which are bonded to respective first metal bonding pads.
10. The semiconductor structure of claim 9 , wherein the first word line driver output nodes of the first word line driver circuit are electrically connected all of the first word lines and to all of the second word lines through a subset of mating pairs of the first metal bonding pads and the second metal bonding pads.
11. The semiconductor structure of claim 9 , wherein:
the second semiconductor die further comprises a second peripheral circuit comprising a second word line driver circuit having second word line driver output nodes;
the first word line driver output nodes of the first word line driver circuit are electrically connected to a first subset of the first word lines and to a first subset of the second word lines through a first subset of mating pairs of the first metal bonding pads and the second metal bonding pads;
the second word line driver output nodes of the second word line driver circuit are electrically connected to a second subset of the second word lines and to a second subset of the first word lines through a second subset of mating pairs of the first metal bonding pads and the second metal bonding pads.
12. The semiconductor structure of claim 11 , wherein:
the first peripheral circuit further comprises a first select line driver circuit comprising first select line driver output nodes electrically connected to the first select lines and not electrically connected to any of the second electrically conductive layers; and
the second peripheral circuit further comprises a second select line driver circuit comprising second select line driver output nodes electrically connected to the second select lines and not electrically connected to any of the first electrically conductive layers.
13. The semiconductor structure of claim 12 , wherein:
the first three-dimensional memory array comprises first bit lines electrically connected to a first end of a respective subset of the first vertical semiconductor channels;
the second three-dimensional memory array comprises second bit lines electrically connected to a first end of a respective subset of the second vertical semiconductor channels and electrically connected to the respective first bit lines;
the first peripheral circuit further comprises a first bit line driver circuit having first bit line driver output nodes electrically connected to a first subset of the first bit lines and to a first subset of the second bit lines; and
the second peripheral circuit further comprises a second bit line driver circuit having second bit line driver output nodes electrically connected to a second subset of the first bit lines and to a second subset of the second bit lines.
14. The semiconductor structure of claim 13 , wherein each one of the second bit lines is bonded to a respective one of the first bit lines by metal-to-metal bonding.
15. The semiconductor structure of claim 8 , further comprising a third semiconductor die comprising a third three-dimensional memory array including a third alternating stack of third insulating layers and third electrically conductive layers comprising third word lines and third select lines, and third memory stack structures vertically extending through the third alternating stack, a third peripheral circuit comprising a third word line driver circuit, and third dielectric material layers embedding third metal interconnect structures and third metal bonding pads,
wherein the first word line driver output nodes are electrically connected to at least some of the third word lines.
16. A method of forming a bonded assembly, comprising:
providing a first semiconductor die comprising a first peripheral circuit comprising field effect transistors and dielectric material layers embedding metal interconnect structures, a first three-dimensional memory array overlying the first peripheral circuit and including a first alternating stack of first insulating layers and first electrically conductive layers comprising first word lines and first select lines, and first memory stack structures vertically extending through the first alternating stack;
providing a second semiconductor die comprising a second three-dimensional memory array overlying the first three-dimensional memory array and including a second alternating stack of second insulating layers and second electrically conductive layers comprising second word lines and second select lines, and second memory stack structures vertically extending through the second alternating stack; and
bonding the first semiconductor die to the second semiconductor die to form the bonded assembly,
wherein the first peripheral circuit comprises a first word line driver circuit having first word line driver output nodes electrically connected to at least some of the first word lines and at least some of the second word lines; and
wherein each first word line is electrically connected to a respective second word line.
17. The method of claim 16 , wherein each word line driver output node within a subset of the first word line driver output nodes is electrically connected to a respective word line switching transistor, is electrically connected to a respective first word line, and is electrically connected to a respective second word line.
18. The method of claim 16 , wherein the first peripheral circuit further comprises a first select line driver circuit comprising:
first select line driver output nodes electrically connected to the first select lines and not electrically connected to any of the second electrically conductive layers; and
second selective line driver output nodes electrically connected to the second select lines and not electrically connected to any of the first electrically conductive layers.
19. The method of claim 16 , wherein the first word line driver output nodes of the first word line driver circuit are electrically connected all of the first word lines and to all of the second word lines.
20. The method of claim 16 , wherein:
the second semiconductor die further comprises a second peripheral circuit comprising a second word line driver circuit having second word line driver output nodes;
the first word line driver output nodes of the first word line driver circuit are electrically connected to a first subset of the first word lines and to a first subset of the second word lines;
the second word line driver output nodes of the second word line driver circuit are electrically connected to a second subset of the second word lines and to a second subset of the first word lines.