Photomask having a plurality of shielding layers
View Patent ↗Some embodiments relate to photomask for mask patterning. The photomask includes a transparent layer comprising quartz, and a molybdenum silicide (MoSi) layer overlying the transparent layer. A first shielding layer overlies the MoSi layer and has a first thickness and a first optical density. A second shielding layer overlies the first shielding layer and has a second thickness and a second optical density. The second thickness is less than one third of the first thickness, and the second optical density is less than one fourth of the first optical density. An overall optical density of the first and second shielding layers is at least 1.8.
1. A photomask for mask patterning, comprising:
a transparent layer comprising quartz;
a molybdenum silicide (MoSi) layer overlying the transparent layer;
a first shielding layer overlying the MoSi layer, wherein the first shielding layer has a first thickness and a first optical density; and
a second shielding layer overlying the first shielding layer, wherein the second shielding layer has a second thickness less than one third of the first thickness and has a second optical density that is less than one fourth of the first optical density, and wherein an overall optical density of the first and second shielding layers is at least 1.8.
2. The photomask of claim 1 , wherein the second shielding layer comprises chromium.
3. The photomask of claim 1 , wherein the second shielding layer has a thickness of 3 nm to 7 nm.
4. The photomask of claim 1 , wherein the first shielding layer comprises boron.
5. The photomask of claim 1 , wherein the MoSi layer covers some portions of the transparent layer while leaving other portions of the transparent layer uncovered.
6. The photomask of claim 1 , wherein the first shielding layer covers some portions of the MoSi layer but leaves other portions of the MoSi layer uncovered.
7. The photomask of claim 1 , wherein the second shielding layer comprises chromium nitride.
8. A photomask for mask patterning, comprising:
a transparent layer comprising quartz;
a molybdenum silicide (MoSi) layer overlying the transparent layer;
a first shielding layer overlying the MoSi layer, the first shielding layer comprising a transition metal or a post transition metal, wherein the first shielding layer has a first thickness and a first optical density; and
a second shielding layer overlying the first shielding layer and comprising chromium, wherein the second shielding layer has a second thickness less than one half of the first thickness and has a second optical density that is less than one half of the first optical density, and wherein an overall optical density of the first and second shielding layers is greater than 1.8.
9. The photomask of claim 8 , wherein a total thickness of the first shielding layer and the second shielding layer ranges from approximately 19 nm to approximately 40 nm.
10. The photomask of claim 8 , wherein a total thickness of the first shielding layer and the second shielding layer is approximately 29 nm.
11. The photomask of claim 8 , wherein the second shielding layer comprises chromium nitride.
12. The photomask of claim 8 , wherein the second shielding layer has a thickness of 3 nm to 7 nm.
13. The photomask of claim 8 , wherein the second shielding layer covers some portions of the MoSi layer but leaves other portions of the MoSi layer uncovered.
14. The photomask of claim 8 , wherein the first shielding layer comprises boron.
15. A photomask for mask patterning, comprising:
a transparent layer comprising quartz;
a molybdenum silicide (MoSi) layer overlying the transparent layer;
a first shielding layer overlying the MoSi layer, the first shielding layer having a first thickness and a first optical density; and
a second shielding layer overlying the first shielding layer, the second shielding layer having a second thickness and a second optical density;
wherein a thickness ratio of the first thickness to the second thickness is greater than 3:1, and an optical density ratio of the first optical density to the second optical density is greater than 4:1.
16. The photomask of claim 15 , wherein an overall optical density of the first and second shielding layers is at least 1.8.
17. The photomask of claim 15 , wherein the first optical density is greater than 1 and the second optical density is less than 1.
18. The photomask of claim 15 , wherein the MoSi layer covers some portions of the transparent layer while leaving other portions of the transparent layer uncovered.
19. The photomask of claim 15 , wherein the second shielding layer comprises chromium nitride.
20. The photomask of claim 15 , wherein the first shielding layer comprises B 5 O 15 Ta 3 .