Coupling inductors in an IC device using interconnecting elements with solder caps and resulting devices
Methods of coupling inductors in an IC device using interconnecting elements with solder caps and the resulting device are disclosed. Embodiments include forming a top inductor structure, in a top inductor area on a lower surface of a top substrate, the top inductor structure having first and second top terminals at its opposite ends; forming a bottom inductor structure, in a bottom inductor area on an upper surface of a bottom substrate, the bottom inductor structure having first and second bottom terminals at its opposite ends; forming top interconnecting elements on the lower surface of the top substrate around the top inductor area; forming bottom interconnecting elements on the upper surface of the bottom substrate around the bottom inductor area; forming solder bumps on lower and upper surfaces, respectively, of the top and bottom interconnecting elements; and connecting the top and bottom interconnecting elements to each other.
1. A semiconductor device comprising:
a top substrate having a lower surface;
a bottom substrate having an upper surface;
a top inductor structure, in a top inductor area at the lower surface, the top inductor structure having first and second top terminals at its opposite ends;
a bottom inductor structure, in a bottom inductor area at the upper surface, the bottom inductor structure having first and second bottom terminals at its opposite ends;
top interconnecting elements on the lower surface surrounding the top inductor area;
bottom interconnecting elements on the upper surface surrounding the bottom inductor area;
solder bumps on lower and upper surfaces, respectively, of the top and bottom interconnecting elements;
the top and bottom interconnecting elements connected to each other;
a top barrier structure, in the top inductor area at the lower surface, spaced from and surrounding a perimeter of the top inductor structure;
a bottom barrier structure, in the bottom inductor area at the upper surface, spaced from and surrounding a perimeter of the bottom inductor structure;
a layer of non-conductive bonding material, with a same thickness as the solder bumps, on lower and upper surfaces, respectively, of the top and bottom barrier structures; and
the top and bottom barrier structures connected to each other.
2. The semiconductor device according to claim 1 , wherein each of the top and bottom inductor structures comprises:
a coil of conductive material, the coil having first and second terminals at its opposite ends.
3. The semiconductor device according to claim 1 , wherein the top and bottom inductor structures are separated from each other by an air gap.
4. The semiconductor device according to claim 1 , wherein the top inductor structures, the top inductor areas, and top barrier structures are substantially a same geometrical shape as and are vertically aligned with the bottom inductor structures, bottom inductor areas, and bottom barrier structures, respectively.
5. The semiconductor device according to claim 1 , further comprising: an under-fill material around the top and bottom barrier structures.
6. The semiconductor device according to claim 1 , wherein the top and bottom inductor structures are at a same height as the top and bottom interconnecting elements.
7. A semiconductor device comprising:
a top inductor structure, in a top inductor area on a lower surface of a top substrate, the top inductor structure having first and second top terminals at its opposite ends;
a bottom inductor structure, in a bottom inductor area on an upper surface of a bottom substrate, the bottom inductor structure having first and second bottom terminals at its opposite ends,
wherein the top and bottom inductor structures include a coil of conductive material, the coil having first and second terminals at its opposite ends;
top interconnecting elements on the lower surface of the top substrate around the top inductor area;
bottom interconnecting elements on the upper surface of the bottom substrate around the bottom inductor area;
solder bumps on lower and upper surfaces, respectively, of the top and bottom interconnecting elements, the top and bottom interconnecting elements being connected to each other;
a top barrier structure, in the top inductor area at the lower surface, spaced from and surrounding a perimeter of the top inductor structure;
a bottom barrier structure, in the bottom inductor area at the upper surface, spaced from and surrounding a perimeter of the bottom inductor structure,
wherein the top inductor structures, the top inductor areas, and top barrier structures are substantially a same geometrical shape as and are vertically aligned with the bottom inductor structures, bottom inductor areas, and bottom barrier structures, respectively, and wherein the top and bottom inductor structures are separated from each other by an air gap;
a layer of non-conductive bonding material, with a same thickness as the solder bumps, on lower and upper surfaces, respectively, of the top and bottom barrier structures; and
wherein the top and bottom barrier structures are connected.
8. The semiconductor device according to claim 7 , further comprising an under-fill material around the top and bottom barrier structures.
9. The semiconductor device of claim 7 , wherein the top and bottom inductor structures are at a same height as the top and bottom interconnecting elements.