Semiconductor device and manufacturing method thereof
A semiconductor device with favorable electric characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The oxide semiconductor layer includes a region in contact with the first insulating layer, the first conductive layer is connected to the oxide semiconductor layer, and the second conductive layer is connected to the oxide semiconductor layer. The second insulating layer includes a region in contact with the oxide semiconductor layer, and the third conductive layer includes a region in contact with the second insulating layer. The oxide semiconductor layer includes first to third regions. The first region and the second region are separated from each other, and the third region is located between the first region and the second region. The third region and the third conductive layer overlap with each other with the second insulating layer located therebetween. The first region and the second region include a region having a higher carbon concentration than the third region.
1. A semiconductor device comprising a transistor comprising:
an oxide semiconductor layer;
a gate insulating layer over the oxide semiconductor layer;
a gate electrode overlapping with the oxide semiconductor layer with the gate insulating layer provided therebetween, the gate electrode comprising a first layer and a second layer provided over the first layer;
a first conductive layer over the oxide semiconductor layer, the first conductive layer configured to be one of a source electrode and a drain electrode of the transistor; and
a first insulating layer over the gate electrode, the first insulating layer having a region being in contact with a top surface of the gate insulating layer,
wherein in a cross-sectional view parallel to a channel length direction of the transistor, an end portion of the first layer of the gate electrode is positioned on an outer side than an end portion of the second layer of the gate electrode,
wherein in the cross-sectional view parallel to the channel length direction of the transistor, the oxide semiconductor layer comprises a channel formation region, a first region being adjacent to the channel formation region and being in contact with the gate insulating layer, a second region being in contact with the first conductive layer, and a third region located between the first region and the second region and being in contact with the first insulating layer, and
wherein a thickness of the second region is smaller than a thickness of the first region.
2. The semiconductor device according to claim 1 , further comprising a second insulating layer under the oxide semiconductor layer,
wherein the second insulating layer comprises a fourth region being in contact with the oxide semiconductor layer and a fifth region being in contact with the first insulating layer, and
wherein a thickness of the fourth region is larger than a thickness of the fifth region.
3. The semiconductor device according to claim 1 ,
wherein each of the first region and the third region includes an impurity element, and
wherein a concentration of the impurity element in the first region is lower than a concentration of the impurity element in the third region.
4. The semiconductor device according to claim 3 , further comprising a second insulating layer under the oxide semiconductor layer,
wherein the second insulating layer comprises a fourth region being in contact with the oxide semiconductor layer and a fifth region being in contact with the first insulating layer, and
wherein a thickness of the fourth region is larger than a thickness of the fifth region.
5. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises In, Ga, and Zn.
6. The semiconductor device according to claim 1 , wherein each of the first layer and the second layer of the gate electrode comprises at least one element selected from the group consisting of Al, Ti, Cr, Co, Ni, Cu, Y, Zr, Mo, Ru, Ag, Mn, Nd, Sc, Ta, and W.
7. The semiconductor device according to claim 1 , wherein the first conductive layer has a stacked layer comprising elements selected from the group consisting of Al, Cr, Cu, Ta, Ti, Mo, W, Ni, Mn, Nd, and Sc.
8. A semiconductor device comprising a transistor comprising:
an oxide semiconductor layer;
a gate insulating layer over the oxide semiconductor layer;
a gate electrode overlapping with the oxide semiconductor layer with the gate insulating layer provided therebetween, the gate electrode comprising a first layer and a second layer provided over the first layer;
a first conductive layer over the oxide semiconductor layer, the first conductive layer configured to be one of a source electrode and a drain electrode of the transistor; and
a first insulating layer over the gate electrode, the first insulating layer having a region being in contact with a top surface of the gate insulating layer,
wherein in a cross-sectional view parallel to a channel length direction of the transistor, an end portion of the first layer of the gate electrode is positioned on an outer side than an end portion of the second layer of the gate electrode,
wherein in the cross-sectional view parallel to the channel length direction of the transistor, an end portion of the gate insulating layer is positioned on an outer side than the end portion of the first layer of the gate electrode,
wherein in the cross-sectional view parallel to the channel length direction of the transistor, the oxide semiconductor layer comprises a channel formation region, a first region being adjacent to the channel formation region and being in contact with the gate insulating layer, a second region being in contact with the first conductive layer, and a third region being adjacent to the first region and being in contact with the first insulating layer, and
wherein a thickness of the second region is smaller than a thickness of the first region.
9. The semiconductor device according to claim 8 , further comprising a second insulating layer under the oxide semiconductor layer,
wherein the second insulating layer comprises a fourth region being in contact with the oxide semiconductor layer and a fifth region being in contact with the first insulating layer, and
wherein a thickness of the fourth region is larger than a thickness of the fifth region.
10. The semiconductor device according to claim 8 ,
wherein each of the first region and the third region includes an impurity element, and
wherein a concentration of the impurity element in the first region is lower than a concentration of the impurity element in the third region.
11. The semiconductor device according to claim 10 , further comprising a second insulating layer under the oxide semiconductor layer,
wherein the second insulating layer comprises a fourth region being in contact with the oxide semiconductor layer and a fifth region being in contact with the first insulating layer, and
wherein a thickness of the fourth region is larger than a thickness of the fifth region.
12. The semiconductor device according to claim 8 , wherein the oxide semiconductor layer comprises In, Ga, and Zn.
13. The semiconductor device according to claim 8 , wherein each of the first layer and the second layer of the gate electrode comprises at least one element selected from the group consisting of Al, Ti, Cr, Co, Ni, Cu, Y, Zr, Mo, Ru, Ag, Mn, Nd, Sc, Ta, and W.
14. The semiconductor device according to claim 8 , wherein the first conductive layer has a stacked layer comprising elements selected from the group consisting of Al, Cr, Cu, Ta, Ti, Mo, W, Ni, Mn, Nd, and Sc.
15. A semiconductor device comprising a transistor comprising:
an oxide semiconductor layer;
a gate insulating layer over the oxide semiconductor layer;
a gate electrode overlapping with the oxide semiconductor layer with the gate insulating layer provided therebetween, the gate electrode comprising a first layer and a second layer provided over the first layer;
a first conductive layer over the oxide semiconductor layer, the first conductive layer configured to be one of a source electrode and a drain electrode of the transistor; and
a first insulating layer over the gate electrode, the first insulating layer having a region being in contact with a top surface of the gate insulating layer and a side surface of the first layer of the gate electrode,
wherein in a cross-sectional view parallel to a channel length direction of the transistor, an end portion of the first layer of the gate electrode is positioned on an outer side than an end portion of the second layer of the gate electrode,
wherein in the cross-sectional view parallel to the channel length direction of the transistor, an angle between a side surface of the first layer of the gate electrode and the top surface of the gate insulating layer is less than an angle between a side surface of the second layer of the gate electrode and a top surface of the first layer of the gate electrode, and
wherein in the cross-sectional view parallel to the channel length direction of the transistor, the oxide semiconductor layer comprises a channel formation region, a first region being adjacent to the channel formation region and being in contact with the gate insulating layer, a second region being in contact with the first conductive layer, and a third region located between the first region and the second region and being in contact with the first insulating layer.
16. The semiconductor device according to claim 15 , further comprising a second insulating layer under the oxide semiconductor layer,
wherein the second insulating layer comprises a fourth region being in contact with the oxide semiconductor layer and a fifth region being in contact with the first insulating layer, and
wherein a thickness of the fourth region is larger than a thickness of the fifth region.
17. The semiconductor device according to claim 15 ,
wherein each of the first region and the third region includes an impurity element, and
wherein a concentration of the impurity element in the first region is lower than a concentration of the impurity element in the third region.
18. The semiconductor device according to claim 15 , wherein the oxide semiconductor layer comprises In, Ga, and Zn.
19. The semiconductor device according to claim 15 , wherein each of the first layer and the second layer of the gate electrode comprises at least one element selected from the group consisting of Al, Ti, Cr, Co, Ni, Cu, Y, Zr, Mo, Ru, Ag, Mn, Nd, Sc, Ta, and W.
20. The semiconductor device according to claim 15 , wherein the first conductive layer has a stacked layer comprising elements selected from the group consisting of Al, Cr, Cu, Ta, Ti, Mo, W, Ni, Mn, Nd, and Sc.