Memory device including memory chip and peripheral memory chip and method of manufacturing the memory device
A memory device includes a memory chip including a memory cell array connected to first word lines and first bit lines, first word line bonding pads respectively connected to the first word lines, and first bit line bonding pads respectively connected to the first bit lines, and a peripheral circuit chip, wherein the peripheral circuit chip includes a test cell array connected to second word lines and second bit lines, second word line bonding pads respectively connected to the first word line bonding pads, second bit line bonding pads respectively connected to the first bit line bonding pads, and a peripheral circuit connected to the second word line bonding pads and the second word lines or the second bit line bonding pads and the second bit lines.
1. A memory device, comprising:
a memory chip including
a memory cell array connected to first word lines and first bit lines,
first word line bonding pads respectively connected to the first word lines, and
first bit line bonding pads respectively connected to the first bit lines; and
a peripheral circuit chip, wherein the peripheral circuit chip includes
a test cell array connected to second word lines and second bit lines,
second word line bonding pads respectively connected to the first word line bonding pads,
second bit line bonding pads respectively connected to the first bit line bonding pads, and
a peripheral circuit connected to
the second word line bonding pads and the second word lines, or
the second bit line bonding pads and the second bit lines,
wherein the memory cell array is disposed above the test cell array in a vertical direction.
2. The memory device of claim 1 , wherein the peripheral circuit chip is vertically connected to the memory chip via the first and second word line bonding pads and the first and second bit line bonding pads.
3. The memory device of claim 1 , wherein
the memory cell array includes a three-dimensional (3D) cell array including a plurality of memory blocks, and
each memory block of the plurality of memory blocks includes a plurality of vertical NAND strings.
4. The memory device of claim 1 , wherein
the test cell array includes a two-dimensional (2D) cell array including at least one test block, and
the at least one test block includes a plurality of planar NAND strings.
5. The memory device of claim 4 , wherein the peripheral circuit chip is configured to perform an electrical die sorting (EDS) process before the peripheral circuit chip is bonded to the memory chip, wherein the EDS process inspects whether or not the test cell array and the peripheral circuit electrically operate.
6. The memory device of claim 5 , wherein the test cell array further includes at least one information data block storing information data that is set through the EDS process.
7. The memory device of claim 6 , wherein the memory chip is configured to perform an information data read (IDR) operation on the at least one information data block, after the memory chip is bonded to the peripheral circuit chip.
8. A memory device, comprising:
a memory chip including a memory cell array and a first bonding pad, wherein the memory cell array includes a plurality of memory blocks each including a plurality of vertical NAND strings; and
a peripheral circuit chip including a test cell array including
at least one test block including a plurality of planar NAND strings,
a peripheral circuit connected to the test cell array, and
a second bonding pad,
wherein the peripheral circuit chip is vertically connected to the memory chip via the first and second bonding pads and the memory cell array is disposed above the test cell array in a vertical direction.
9. The memory device of claim 8 , wherein the first bonding pad includes:
a plurality of first word line bonding pads respectively connected to first word lines connected to the memory cell array; and
a plurality of first bit line bonding pads respectively connected to first bit lines connected to the memory cell array.
10. The memory device of claim 8 , wherein the second bonding pad includes:
a plurality of second word line bonding pads respectively connected to second word lines connected to the test cell array; and
a plurality of second bit line bonding pads respectively connected to second bit lines connected to the test cell array.
11. The memory device of claim 8 , wherein the peripheral circuit chip is configured to perform an electrical die sorting (EDS) process before the peripheral circuit chip is bonded to the memory chip, wherein the EDS process inspects whether or not the test cell array and the peripheral circuit electrically operate.
12. The memory device of claim 11 , wherein the test cell array further includes at least one information data block storing information data that is set through the EDS process.
13. The memory device of claim 8 , wherein the peripheral circuit includes a row decoder connected to the memory cell array through the first and second bonding pads and first word lines and connected to the test cell array through second word lines.
14. The memory device of claim 8 , wherein the peripheral circuit includes a page buffer connected to the memory cell array through the first and second bonding pads and first bit lines and connected to the test cell array through second bit lines.
15. A method of manufacturing a memory device, the method comprising:
fabricating a memory chip including a memory cell array as a three-dimensional (3D) cell array;
fabricating a peripheral circuit chip including a test cell array as a two-dimensional (2D) cell array and a peripheral circuit connected to the 2D cell array;
performing an electrical die sorting (EDS) process on the peripheral circuit chip to inspect whether or not the 2D cell array and the peripheral circuit electrically operate; and
fabricating the memory device based on bonding the peripheral circuit chip to the memory chip, such that the memory cell array is disposed above the test cell array in a vertical direction, in response to a determination that the 2D cell array and the peripheral circuit electrically operate.
16. The method of claim 15 , wherein the fabricating of the memory chip includes fabricating the memory chip on a first wafer, the memory chip including the 3D cell array connected to first word lines and first bit lines, first word line bonding pads respectively connected to the first word lines, and first bit line bonding pads respectively connected to the first bit lines.
17. The method of claim 16 , wherein the fabricating of the peripheral circuit chip includes fabricating the peripheral circuit chip on a second wafer, the peripheral circuit chip including the 2D cell array connected to second word lines and second bit lines, the peripheral circuit connected to the second word lines and the second bit lines, and second word line bonding pads, and second bit line bonding pads.
18. The method of claim 17 , wherein the fabricating of the memory device includes bonding the peripheral circuit chip to the memory chip based on bonding the first word line bonding pads to the second word line bonding pads and bonding the first bit line bonding pads to the second bit line bonding pads.
19. The method of claim 15 , further comprising, after performing the EDS process, programming information data generated as a result of the EDS process in an information data block of the 2D cell array.
20. The method of claim 19 , further comprising, when the information data is non-valid information data, re-designing the peripheral circuit.