Light emitting structure
A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a passivation layer covering a conductive layer on the receiving substrate, and the passivation layer is hardened. In an embodiment the micro LED device is punched-through a B-staged thermoset material. In an embodiment the micro LED device is punched-through a thermoplastic material.
1. A display comprising:
a display substrate;
a plurality of bottom conductive lines on the display substrate;
a passivation layer spanning across the display substrate and directly over the plurality of bottom conductive layers;
a corresponding plurality of LED devices bonded to the plurality of bottom conductive layers and embedded within the passivation layer, wherein the passivation layer laterally surrounds each LED device;
a transparent top conductive layer directly over the passivation layer and in contact with at least one of the LED devices;
a black matrix layer over the transparent top conductive layer; and
a plurality of openings in the black matrix layer, each opening of the plurality of openings around a corresponding LED device of the plurality of LED devices.
2. The display of claim 1 , wherein the passivation layer is a thermoset material.
3. The display of claim 1 , wherein the passivation is transparent.
4. The display of claim 1 , further comprising a barrier layer between the black matrix layer and the transparent top conductive layer.
5. The display of claim 4 , wherein the plurality of LED device is bonded to the pluralty of bottom conductive contact layers with a plurality of alloy bonding layers.
6. The display of claim 1 , further comprising a cover layer over the black matrix layer.
7. The display of claim 1 , wherein each LED device has a maximum width of 1 to 100 μm.
8. The display of claim 1 , wherein each LED device has a maximum width of 1 to 10 μm.
9. The display of claim 1 , wherein the display substrate includes active matrix display circuitry.
10. The display of claim 1 , wherein the display substrate includes passive matrix display circuitry.
11. The display of claim 1 , wherein the plurality of LED devices includes a first group of LED devices designed to emit a first color, and a second group of LED devices designed to emit a second color different from the first color.
12. The display of claim 1 , wherein the transparent top conductive layer is formed of a transparent conductive oxide material.
13. The display of claim 1 , comprising a plurality of transparent top conductive layers directly over the passivation layer and in contact with the plurality of LED devices.
14. The display of claim 13 , wherein each transparent top conductive layer is in electrical contact with more than one LED device of the plurality of LED devices.
15. The display of claim 1 , wherein the plurality of LED devices is a plurality of vertical semiconductor-based LEDs.
16. The display of claim 15 , wherein the plurality of vertical semiconductor-based LEDs is bonded to the plurality of bottom conductive layers with a plurality of bonding layers.
17. The display of claim 15 , wherein each vertical semiconductor-based LED comprises sidewalls and a conformal dielectric barrier layer spanning along the sidewalls.
18. The display of claim 17 , wherein the conformal dielectric barrier layer is 50-600 angstroms thick.