Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers above a conductor tier. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. The channel-material strings directly electrically couple to conductor material of the conductor tier. The insulative tier immediately-above a lowest of the conductive tiers comprises a lower first insulating material and an upper second insulating material above the upper first insulating material. The upper second insulating material is of different composition from that of the lower first insulating material. Intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. Other embodiments, including method, are disclosed.
1. A method used in forming a memory array comprising strings of memory cells, comprising:
forming a lower portion of a stack that will comprise vertically-alternating first tiers and second tiers, the stack comprising laterally-spaced memory-block regions, material of the first tiers being of different composition from material of the second tiers, the lower portion comprising lower first insulating material;
forming sacrificial rails in the lower portion that are individually between immediately-laterally-adjacent of the memory-block regions and extend through the lower first insulating material;
forming upper second insulating material directly above the lower first insulating material and directly above the sacrificial rails, the upper second insulating material being of different composition from that of the lower first insulating material;
forming the vertically-alternating first tiers and second tiers of an upper portion of the stack above the upper second insulating material and above the sacrificial rails, and forming channel-material strings that extend through the upper portion to the lower portion;
forming horizontally-elongated trenches into the stack that are individually between the immediately-laterally-adjacent memory-block regions and extend through the upper portion and through the upper second insulating material to one of the sacrificial rails that is immediately-therebelow;
removing the sacrificial rails through the trenches;
the lower portion is formed above a conductor tier comprising conductor material;
the lower portion comprises a lowest of the first tiers comprising sacrificial material;
the channel-material strings extending to the lowest of the first tiers in the lower portion;
the removing the sacrificial rails exposes the sacrificial material in the lowest of the first tiers;
after removing the sacrificial rails, isotropically etching the exposed sacrificial material from the lowest of the first tiers through the trenches;
after the isotropically etching, forming conductive material in the lowest of the first tiers that directly electrically couples together channel material of individual of the channel-material strings and the conductor material of the conductor tier;
providing silicon dioxide laterally-outward of the channel-material strings; and
after the isotropically etching of the exposed sacrificial material from the lowest of the first tiers and before forming the conductive material, isotropically etching the silicon dioxide selectively relative to any exposed of the lower first insulating material and any exposed of the upper second insulating material.
2. The method of claim 1 wherein at least one of the lower first insulating material and the upper second insulating material comprises at least one of carbon-doped silicon dioxide, boron-doped silicon dioxide, hafnium oxide, silicon oxynitride, and silicon carbide.
3. The method of claim 2 wherein each of the lower first insulating material and the upper second insulating material comprises at least one of carbon-doped silicon dioxide, boron-doped silicon dioxide, hafnium oxide, silicon oxynitride, and silicon carbide.
4. A method used in forming a memory array comprising strings of memory cells, comprising:
forming a lower portion of a stack that will comprise vertically-alternating first tiers and second tiers, the stack comprising laterally-spaced memory-block regions, material of the first tiers being of different composition from material of the second tiers, the lower portion comprising lower first insulating material;
forming sacrificial rails in the lower portion that are individually between immediately-laterally-adjacent of the memory-block regions and that extend through the lower first insulating material;
forming upper second insulating material directly above the lower first insulating material and directly above the sacrificial rails, the upper second insulating material comprising a same composition as that of the lower first insulating material, the same composition being other than undoped stoichiometric silicon dioxide and other than stoichiometric silicon nitride;
forming the vertically-alternating first tiers and second tiers of an upper portion of the stack above the upper second insulating material and above the sacrificial rails, and forming channel-material strings that extend through the upper portion to the lower portion;
forming horizontally-elongated trenches into the stack that are individually between the immediately-laterally-adjacent memory-block regions and extend through the upper portion and through the upper second insulating material to one of the sacrificial rails that is immediately-therebelow;
removing the sacrificial rails through the trenches;
the lower portion is formed above a conductor tier comprising conductor material;
the lower portion comprises a lowest of the first tiers comprising sacrificial material;
the channel-material strings extending to the lowest of the first tiers in the lower portion;
the removing the sacrificial rails exposes the sacrificial material in the lowest of the first tiers;
after removing the sacrificial rails, isotropically etching the exposed sacrificial material from the lowest of the first tiers through the trenches;
after the isotropically etching, forming conductive material in the lowest of the first tiers that directly electrically couples together channel material of individual of the channel-material strings and the conductor material of the conductor tier;
providing silicon dioxide laterally-outward of the channel-material strings; and
after the isotropically etching of the exposed sacrificial material from the lowest of the first tiers and before forming the conductive material, isotropically etching the silicon dioxide selectively relative to any exposed of the same composition material.
5. The method of claim 4 wherein the same composition comprises at least one of carbon-doped silicon dioxide, boron-doped silicon dioxide, hafnium oxide, silicon oxynitride, and silicon carbide.
6. A method used in forming a memory array comprising strings of memory cells, comprising:
forming a lower portion of a stack that will comprise vertically-alternating first tiers and second tiers, the stack comprising laterally-spaced memory-block regions, material of the first tiers being of different composition from material of the second tiers, the lower portion comprising sacrificial rails that are individually between immediately-laterally-adjacent of the memory-block regions;
forming insulating material aside and directly above the sacrificial rails, the insulating material comprising material other than undoped stoichiometric silicon dioxide and other than stoichiometric silicon nitride;
forming the vertically-alternating first tiers and second tiers of an upper portion of the stack above the insulating material and above the sacrificial rails, and forming channel-material strings that extend through the upper portion to the lower portion;
forming horizontally-elongated trenches into the stack that are individually between the immediately-laterally-adjacent memory-block regions and extend through the upper portion and through the insulating material to one of the sacrificial rails that is immediately-therebelow;
removing the sacrificial rails through the trenches;
the lower portion is formed above a conductor tier comprising conductor material;
the lower portion comprises a lowest of the first tiers comprising sacrificial material;
the channel-material strings extending to the lowest of the first tiers in the lower portion;
the removing the sacrificial rails exposes the sacrificial material in the lowest of the first tiers;
after removing the sacrificial rails, isotropically etching the exposed sacrificial material from the lowest of the first tiers through the trenches;
after the isotropically etching, forming conductive material in the lowest of the first tiers that directly electrically couples together channel material of individual of the channel-material strings and the conductor material of the conductor tier;
providing silicon dioxide laterally-outward of the channel-material strings; and
after the isotropically etching of the exposed sacrificial material from the lowest of the first tiers and before forming the conductive material, isotropically etching the silicon dioxide selectively relative to any exposed of the insulating material.
7. The method of claim 6 wherein the isotropically etching of the silicon dioxide is conducted selectively relative to any exposed of the insulating material.
8. The method of claim 6 wherein the insulating material comprises at least one of carbon-doped silicon dioxide, boron-doped silicon dioxide, hafnium oxide, silicon oxynitride, and silicon carbide.