High electron mobility transistor and method for forming the same
A method for forming a high electron mobility transistor is disclosed. A mesa structure having a channel layer and a barrier layer is formed on a substrate. The mesa structure has two first edges extending along a first direction and two second edges extending along a second direction. A passivation layer is formed on the substrate and the mesa structure. A first opening and a plurality of second openings connected to a bottom surface of the first opening are formed and through the passivation layer, the barrier layer and a portion of the channel layer. In a top view, the first opening exposes the two first edges of the mesa structure without exposing the two second edges of the mesa structure. A metal layer is formed in the first opening and the second openings thereby forming a contact structure.
1. A method for forming a high electron mobility transistor,
comprising:
providing a substrate;
forming a mesa structure on the substrate, wherein the mesa structure comprises a channel layer, a barrier layer disposed on the channel layer, two opposite first edges extending along a first direction, and two opposite second edges extending along a second direction, the first direction and the second direction are perpendicular;
forming a passivation layer covering the substrate and the mesa structure;
forming at least a first opening, wherein the first opening penetrates through the passivation layer and exposes the barrier layer, and in a top view, the first opening exposes the two opposite first edges of the mesa structure without exposing the two opposite second edges of the mesa structure;
forming a plurality of second openings, wherein the plurality of second openings are connected to a bottom surface of the first opening and penetrate through the barrier layer and a portion of the channel layer; and
forming a metal layer in the first opening and the plurality of second openings thereby forming a contact structure on the mesa structure; and
forming a gate structure on the mesa structure, wherein in the top view, the gate structure is at a side of the contact structure along the first direction, and extends lengthwise along the second direction.
2. The method for forming a high electron mobility transistor according to claim 1 , wherein a bottom surface of the first opening is flush with an upper surface of the barrier layer.
3. The method for forming a high electron mobility transistor according to claim 1 , wherein the first opening extends into part of the barrier layer.
4. The method for forming a high electron mobility transistor according to claim 1 , wherein the plurality of second openings are arranged along the first direction and the second direction to form an array in the top view.
5. The method for forming a high electron mobility transistor according to claim 1 , wherein in the top view, the gate structure overlaps the two opposite first edges of the mesa structure.
6. The method for forming a high electron mobility transistor according to claim 1 , wherein the step of forming the gate structure comprises:
forming a semiconductor gate layer on the barrier layer of the mesa structure, wherein in the top view, two ends of the semiconductor gate layer are flush with the two opposite first edges of the mesa structure;
covering the semiconductor gate layer with the passivation layer;
forming a gate metal layer through the passivation layer to contact a top surface of the semiconductor gate layer, wherein in the top view, the gate metal layer overlaps the two opposite first edges of the mesa structure.