Granted Patent B2

US 12,212,284 · App. 18/415,985 · Granted Jan 28, 2025

Inventor: Philip John Lehtola (Cedar Rapids, IA)

Assignee: Skyworks Solutions, Inc.

H03F1/0216H03F1/0288H03F3/245H03F3/19H03F2200/171H03F2200/451H04B1/04H04B2001/0408H04B1/16

Abstract

Claims (26)

1. A power amplifier system comprising:

a carrier amplifier including a first capacitor and a first gain bipolar transistor having a base configured to receive a radio frequency signal through the first capacitor; and

a saturation detector including a resistor and a detection bipolar transistor that is located within 20 μm of the first gain bipolar transistor, the detection bipolar transistor having a base connected to the base of the first gain bipolar transistor through the resistor and a collector that generates a saturation detection current indicating a saturation of the first gain bipolar transistor.

2. The power amplifier system of claim 1 further comprising a peaking amplifier including a second gain bipolar transistor having a base connected to the collector of the detection bipolar transistor.

3. The power amplifier system of claim 2 further comprising an input phase shifter, the base of the second gain bipolar transistor configured to receive the radio frequency signal through the input phase shifter.

4. The power amplifier system of claim 3 wherein the peaking amplifier further includes a second capacitor connected between the input phase shifter and the base of the second gain bipolar transistor.

5. The power amplifier system of claim 3 further comprising an output phase shifter connected between a collector of the first gain bipolar transistor and a collector of the second gain bipolar transistor.

6. The power amplifier system of claim 2 wherein the saturation detection current is operable to turn on the peaking amplifier in response to the saturation detection current indicating that the first gain bipolar transistor is saturated.

7. The power amplifier system of claim 6 wherein the saturation detection current is operable to adjust a bias of the peaking amplifier.

8. The power amplifier system of claim 1 wherein the detection bipolar transistor and the first gain bipolar transistor are thermally coupled.

9. The power amplifier system of claim 1 wherein the detection bipolar transistor and the first gain bipolar transistor are NPN bipolar transistors.

10. The power amplifier system of claim 1 wherein the saturation detector further includes a filter capacitor connected between the base of the detection bipolar transistor and a ground voltage.

11. A packaged module comprising:

a package substrate; and

a semiconductor die attached to the package substrate, the semiconductor die including a carrier amplifier that includes a first capacitor and a first gain bipolar transistor having a base configured to receive a radio frequency signal through the first capacitor, the semiconductor die further including a saturation detector that includes a resistor and a detection bipolar transistor that is located within 20 μm of the first gain bipolar transistor, the detection bipolar transistor having a base connected to the base of the first gain bipolar transistor through the resistor and a collector that generates a saturation detection current indicating a saturation of the first gain bipolar transistor.

12. The packaged module of claim 11 wherein the semiconductor die further includes a peaking amplifier that includes a second gain bipolar transistor having a base connected to the collector of the detection bipolar transistor.

13. A mobile device comprising:

a transceiver configured to generate a radio frequency signal; and

a front end system including a carrier amplifier that includes a first capacitor and a first gain bipolar transistor having a base configured to receive a radio frequency signal through the first capacitor, the front end system further including a saturation detector that includes a resistor and a detection bipolar transistor that is located within 20 μm of the first gain bipolar transistor, the detection bipolar transistor having a base connected to the base of the first gain bipolar transistor through the resistor and a collector that generates a saturation detection current indicating a saturation of the first gain bipolar transistor.

14. The mobile device of claim 13 wherein the front end system further includes a peaking amplifier that includes a second gain bipolar transistor having a base connected to the collector of the detection bipolar transistor.

15. The mobile device of claim 14 wherein the front end system further includes an input phase shifter, the base of the second gain bipolar transistor configured to receive the radio frequency signal through the input phase shifter.

16. The mobile device of claim 15 wherein the peaking amplifier further includes a second capacitor connected between the input phase shifter and the base of the second gain bipolar transistor.

17. The mobile device of claim 15 wherein the front end system further includes an output phase shifter connected between a collector of the first gain bipolar transistor and a collector of the second gain bipolar transistor.

18. The mobile device of claim 14 wherein the saturation detection current is operable to turn on the peaking amplifier in response to the saturation detection current indicating that the first gain bipolar transistor is saturated.

19. The mobile device of claim 18 wherein the saturation detection current is operable to adjust a bias of the peaking amplifier.

20. The mobile device of claim 13 wherein the saturation detector further includes a filter capacitor connected between the base of the detection bipolar transistor and a ground voltage.

Continuity (4)

References Cited (99)