IP Library › Granted Patent US 12,216,372
Granted Patent B2
US 12,216,372 · App. 18/791,701 · Granted Feb 4, 2025

Liquid crystal display device

Inventors: Hajime Kimura (Kanagawa, JP); Hideki Uochi (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
G02F1/1368G02F1/133345G02F1/133371G02F1/133555G02F1/134363G02F1/13439G02F1/136227G02F1/136286G02F1/133553G02F1/134372G02F1/136209G02F1/136222G02F2201/121G02F2201/123G02F2201/124
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Quick Facts
Patent No.
US 12,216,372
App. No.
18/791,701
Granted
Feb 4, 2025
Kind
B2
Abstract

It is an object of the present invention to apply a sufficient electrical field to a liquid crystal material in a horizontal electrical field liquid crystal display device typified by an FFS type. In a horizontal electrical field liquid crystal display, an electrical field is applied to a liquid crystal material right above a common electrode and a pixel electrode using plural pairs of electrodes rather than one pair of electrodes. One pair of electrodes includes a comb-shaped common electrode and a comb-shaped pixel electrode. Another pair of electrodes includes a common electrode provided in a pixel portion and the comb-shaped pixel electrode.

Claims (38)

1. A liquid crystal display device having a liquid crystal layer provided over a pixel electrode and a common electrode comprising:

a semiconductor layer electrically connected to the pixel electrode and having a channel formation region of a transistor;

a gate line over the semiconductor layer;

a first insulating layer over the gate line;

a source line over the first insulating layer and electrically connected to the semiconductor layer;

a first conductive layer over the first insulating layer and electrically connected to the semiconductor layer and the pixel electrode; and

a common wiring over the first insulating layer and electrically connected to the common electrode,

wherein the first conductive layer has a same material as the source line,

wherein the semiconductor layer comprises silicon,

wherein each of the pixel electrode and the common electrode comprises indium tin oxide,

wherein the common electrode is in contact with an upper surface of the common wiring,

wherein in a plan view, the common wiring is disposed on a side of another adjacent pixel in a direction intersecting a direction in which the common wiring extends, and does not overlap with the first conductive layer,

wherein in a plan view, the channel formation region of the transistor does not overlap with the common electrode,

wherein in a plan view, the pixel electrode has a comb-shape,

wherein in a plan view, the common electrode has an opening,

wherein the opening of the common electrode has a first region overlapping with the pixel electrode and a second region not overlapping with the pixel electrode, and

wherein the common wiring overlaps with the second region.

2. The liquid crystal display device according to claim 1 ,

wherein the pixel electrode is over the first conductive layer.

3. A liquid crystal display device having a liquid crystal layer provided over a pixel electrode and a common electrode comprising:

a semiconductor layer electrically connected to the pixel electrode and having a channel formation region of a transistor;

a gate line over the semiconductor layer;

a first insulating layer over the gate line;

a source line over the first insulating layer and electrically connected to the semiconductor layer;

a first conductive layer over the first insulating layer and electrically connected to the semiconductor layer and the pixel electrode; and

a common wiring over the first insulating layer and electrically connected to the common electrode,

wherein the first conductive layer has a same material as the source line,

wherein the semiconductor layer comprises silicon,

wherein each of the pixel electrode and the common electrode comprises indium tin oxide,

wherein the common electrode is in contact with an upper surface of the common wiring,

wherein in a plan view, the common wiring is disposed on a side of another adjacent pixel in a direction intersecting a direction in which the common wiring extends, and does not overlap with the first conductive layer,

wherein in a plan view, the channel formation region of the transistor does not overlap with the common electrode,

wherein in a plan view, the pixel electrode has a comb-shape,

wherein in a plan view, the common electrode has a planar region, and a first region and a second region that are separated from each other,

wherein a third region sandwiched between the first region and the second region has a fourth region that overlaps with the pixel electrode and a fifth region that does not overlap with the pixel electrode, and

wherein the common wiring overlaps with the fifth region.

4. The liquid crystal display device according to claim 3 ,

wherein the pixel electrode is over the first conductive layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 1, 2024
From: KIMURA, HAJIME; UOCHI, HIDEKI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 068152/0814 →
Priority Claims (1)
JP 2005-350147 · Dec 5, 2005 · national
Continuity (15)
Continuation 18432239 · Feb 5, 2024
Continuation 18112536 · Feb 22, 2023
Continuation 17462035 · Aug 31, 2021
Continuation 16735819 · Jan 7, 2020
Continuation 16435609 · Jun 10, 2019
Continuation 15998993 · Aug 20, 2018
Continuation 15899409 · Feb 20, 2018
Continuation 15397813 · Jan 4, 2017
Continuation 15068801 · Mar 14, 2016
Continuation 14140005 · Dec 24, 2013
Continuation 13442932 · Apr 10, 2012
Continuation 13015991 · Jan 28, 2011
Continuation 12848247 · Aug 2, 2010
Continuation 11566005 · Dec 1, 2006
Related Publication 20240393651A1 · Nov 28, 2024
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