Core-shell semiconductor nanoparticles, production method thereof, and light-emitting device
Provided are core-shell semiconductor nanoparticles, each including a core and a shell disposed on a surface of the core, and emitting light when irradiated with light. The core contains a semiconductor containing M 1 , M 2 , and Z, M 1 containing at least one selected from the group consisting of Ag, Cu, and Au, M 2 containing at least one selected from the group consisting of Al, Ga, In, and Tl, and Z containing at least one selected from the group consisting of S, Se, and Te. The shell contains a semiconductor containing a Group 13 element and a Group 16 element, and having a greater band-gap energy than the core. The shell has a compound containing a Group 15 element disposed on a surface of the shell, and the Group 15 element containing at least P with a negative oxidation number.
1. Core-shell semiconductor nanoparticles, each comprising:
a core; and
a shell disposed on a surface of the core, and emitting light when irradiated with light,
wherein the core consists of a semiconductor having a composition represented by the formula M 1 M 2 Z 2 , M 1 being Ag, M 2 consisting of at least one selected from the group consisting of Ga and In, and Z consisting of at least one selected from the group consisting of S and Se,
the shell contains a semiconductor consisting of Ga and S, and having a greater band-gap energy than the core, and
a compound containing a Group 15 element is disposed on an outer surface of the shell, the Group 15 element containing at least P with a negative oxidation number, and
wherein the core has a chalcopyrite-type crystal structure,
wherein the compound containing the Group 15 element is a shell surface modifier having a hydrocarbon group with a carbon number of from 4 to 20.
2. The core-shell semiconductor nanoparticles according to claim 1 , wherein the shell contains Ga as the Group 13 element, and wherein the shell contains S as the Group 16 element.
3. The core-shell semiconductor nanoparticles according to claim 1 , wherein the core contains S as Z.
4. The core-shell semiconductor nanoparticles according claim 1 , having an emission spectrum including a peak with a half-bandwidth of 70 nm or less.
5. The core-shell semiconductor nanoparticles according to claim 1 , having an emission lifetime of 200 ns or less.
6. The core-shell semiconductor nanoparticles according to claim 1 , having an excitation spectrum or an absorption spectrum with an exciton peak.
7. The core-shell semiconductor nanoparticles according to claim 1 , having a band-edge emission component with a purity of 40% or more over an entire emission spectrum.
8. The core-shell semiconductor nanoparticles according to claim 1 , having a band-edge emission component with a purity of 40% or more over an entire emission spectrum, and a quantum yield of 10% or more.
9. A method of producing core-shell semiconductor nanoparticles that emit light when irradiated with light, the method comprising:
providing core-shell particles each containing a core and a shell disposed on a surface of the core; and
contacting the core-shell particles and a compound containing a Group 15 element,
wherein the core consists of a semiconductor having a composition represented by the formula M 1 M 2 Z 2 , M 1 being Ag, M 2 consisting of at least one selected from the group consisting of Al, Ga and In, and Z consisting of at least one selected from the group consisting of S and Se,
the shell contains a semiconductor consisting of Ga and S, and having a greater band-gap energy than the core, and
the Group 15 element contains at least P with a negative oxidation number, and
wherein the core has a chalcopyrite-type crystal structure,
wherein the compound containing the Group 15 element is a shell surface modifier having a hydrocarbon group with a carbon number of from 4 to 20.
10. A light-emitting device, comprising:
a light conversion member; and
a semiconductor light-emitting element,
wherein the light conversion member contains the core-shell semiconductor nanoparticles according to claim 1 .
11. The light-emitting device according to claim 10 , wherein the semiconductor light-emitting element is an LED chip.
12. The core-shell semiconductor nanoparticles according to claim 1 , wherein the compound containing the Group 15 element includes at least one selected from the group consisting of tributylphosphine, triisobutylphosphine, tripentylphosphine, trihexylphosphine, trioctylphosphine, tris(ethylhexyl)phosphine, tridecylphosphine, tridodecylphosphine, tritetradecylphosphine, trihexadecylphosphine, trioctadecylphosphine, triphenylphosphine, tributylphosphine oxide, triisobutylphosphine oxide, tripentylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide, tris(ethylhexyl)phosphine oxide, tridecylphosphine oxide, tridodecylphosphine oxide, tritetradecylphosphine oxide, trihexadecylphosphine oxide, trioctadecylphosphine oxide, and triphenylphosphine oxide.
13. The method according to claim 9 , wherein the compound containing the Group 15 element includes at least one selected from the group consisting of tributylphosphine, triisobutylphosphine, tripentylphosphine, trihexylphosphine, trioctylphosphine, tris(ethylhexyl)phosphine, tridecylphosphine, tridodecylphosphine, tritetradecylphosphine, trihexadecylphosphine, trioctadecylphosphine, triphenylphosphine, tributylphosphine oxide, triisobutylphosphine oxide, tripentylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide, tris(ethylhexyl)phosphine oxide, tridecylphosphine oxide, tridodecylphosphine oxide, tritetradecylphosphine oxide, trihexadecylphosphine oxide, trioctadecylphosphine oxide, and triphenylphosphine oxide.
14. The Core-shell semiconductor nanoparticles according to claim 1 , wherein the compound containing the Group 15 element is disposed only on an outer surface of the shell.