Nanocavity monolayer laser monolithically integrated with LED pump
A method for forming a pumped laser structure includes forming a III-V buffer layer on a substrate including one of Si or Ge; forming a light emitting diode (LED) on the buffer layer configured to produce a threshold pump power; forming a photonic crystal layer on the LED and depositing a monolayer semiconductor nanocavity laser on the photonic crystal layer for receiving light through the photonic crystal layer from the LED with an optical pump power greater than the threshold pump power, wherein the LED and the laser are formed monolithically and the LED functions as an optical pump for the laser.
1. A method for forming a pumped laser structure, comprising:
forming a III-V buffer layer having a monocrystalline crystal structure on a substrate including one of Si or Ge;
forming a light emitting diode (LED) on the buffer layer, the LED configured to produce a threshold pump power of about 100 mW/mm 2 ;
forming a photonic crystal layer in contact with the LED; and
depositing a monolayer semiconductor nanocavity laser on the photonic crystal layer for receiving light through the photonie crystal layer from the LED, wherein the LED and the laser are monolithically integrated, with the photonic crystal layer positioned directly between the LED and the nanocavity laser such that the LED functions as an optical pump for the laser by producing light output with a threshold pump power that corresponds to the threshold value of the monolayer semiconductor nanocavity laser and the photonic crystal guides the LED's output to the monolayer semiconductor nanocavity laser.
2. The laser structure as recited in claim 1 , wherein the LED includes AlGaAs or AlGalnP material.
3. The method as recited in claim 1 , wherein the monolayer semiconductor nanocavity laser is formed to include a monolayer of a transition metal dichalcogenide.
4. The method as recited in claim 3 , wherein the transition metal dichalcogenide has a chemical formula of MX 2 where M is selected from the group consisting of: W and Mo and X is selected from the group consisting of: S, Se and Te.
5. The method as recited in claim 4 , wherein the transition metal dichalcogenide is WSe 2 .
6. The method as recited in claim 1 , wherein the LED is formed to include a III-V material, and the photonic crystal is formed to include SiO 2 .
7. The method as recited in claim 1 , wherein the LED is formed to include a transparent substrate.
8. The method as recited in claim 1 , wherein the III-V buffer layer reduces dislocation defects due to lattice mismatch between the substrate and the LED.
9. A method for forming a pumped laser structure, comprising:
monolithically forming a nanocavity laser and a light emitting diode (LED) within a laser structure, including:
forming a first surface of a buffer layer including a III-V material on a substrate including silicon (Si) or germanium (Ge), the buffer layer comprised of a monocrystalline crystal structure for reducing dislocation defects due to lattice mismatch between the substrate and the LED;
forming a light emitting diode (LED) on a second surface the buffer layer to produce a threshold pump power of at least about 100 m W/mm 2 ;
forming a photonic crystal layer in contact with the LED; and
forming the nanocavity laser on the photonic crystal layer to include a monolayer of a transition metal dichalcogenide having a chemical formula of MX 2 for receiving the light produced by the LED through the photonic crystal layer, such that the photonic crystal layer is positioned directly between the LED and the nanocavity laser to guide the LED's output to optically pump the nanocavity laser to reach the threshold pump power needed by the monolayer nanocavity laser to lase, where M is selected from the group consisting of: W and Mo and X is selected from the group consisting of: S, Se and Te,
such that the LED functions as an optical pump for the laser by producing light output with a threshold pump power that corresponds to the threshold value of the monolayer semiconductor nanocavity laser and the photonic crystal guides the LED's output to the monolayer semiconductor nanocavity lase.
10. The method as recited in claim 9 , wherein the transition metal dichalcogenide is WSe 2 .
11. The method as recited in claim 9 , wherein the LED is formed to include a III-V material.
12. The method as recited in claim 9 , wherein the photonic crystal is formed to include SiO 2 .
13. The method as recited in claim 9 , wherein the LED is formed to include a transparent substrate.