Embedded memory adjacent to non-memory
A process integration and patterning flow used to pattern a memory array area for an embedded memory without perturbing a fabricating process for logic circuitries. The fabrication process uses a pocket mask (e.g., a hard mask) to decouple the etching process of a memory array area and non-memory area. Such decoupling allows for a simpler fabrication process with little to no impact on the current fabrication process. The fabrication process may use multiple pocket masks to decouple the etching process of the memory array area and the non-memory area. This fabrication process (using multiple pocket masks) allows to avoid exposure of memory material into a second pocket etch chamber. The process of etching memory material is decoupled from the process of etching an encapsulation material. Examples of embedded memory include dynamic random-access memory and ferroelectric random-access memory.
1. An apparatus comprising:
a first pedestal;
a second pedestal;
an etch stop layer, wherein the first pedestal is separated by the second pedestal by the etch stop layer;
a first memory device comprising a first stack of materials, wherein a first portion of the first stack of materials is on the first pedestal;
a second memory device comprising a second stack of materials, wherein a second portion of the second stack of materials is on the second pedestal;
a first hard mask layer on the first memory device;
a second hard mask layer on the first memory device, wherein the first hard mask layer and the second hard mask layer are separated by a first metal via;
a first protection layer on the first hard mask layer;
a second protection layer on the second hard mask layer, wherein the first protection layer and the second protection layer are separated by the first metal via;
a third hard mask layer on the second memory device;
a fourth hard mask layer on the second memory device, wherein the third hard mask layer and the fourth hard mask layer are separated by a second metal via;
a third protection layer on the third hard mask layer;
a fourth protection layer on the fourth hard mask layer, wherein the third protection layer and the fourth protection layer are separated by the second metal via; and
an encapsulation material between the first memory device, the second memory device, the second hard mask layer, the second protection layer; the third hard mask layer, and the third protection layer, wherein the encapsulation material is on the etch stop layer and separates an interlayer dielectric from the etch stop layer.
2. The apparatus of claim 1 , wherein the encapsulation material is on the second protection layer and the third protection layer.
3. The apparatus of claim 1 , wherein the encapsulation material is a first encapsulation material, wherein the etch stop layer is a first etch stop layer, wherein the apparatus includes a second etch stop layer, wherein the apparatus includes a second encapsulation material, wherein the second encapsulation material is on the second etch stop layer and on the first protection layer, and wherein the second encapsulation material is adjacent to the first memory device and the first hard mask layer.
4. The apparatus of claim 3 , wherein the apparatus includes a third etch stop layer, wherein the apparatus includes a third encapsulation material, wherein the third encapsulation material is on the third etch stop layer and on the fourth protection layer, and wherein the third encapsulation material is adjacent to the second memory device and the fourth hard mask layer.
5. The apparatus of claim 4 , wherein the third etch stop layer extends to a non-memory region, and wherein the first memory device and the second memory device are located in a memory region separate from the non-memory region.
6. The apparatus of claim 4 further comprises an inter-layer dielectric on the third encapsulation material and the third etch stop layer.
7. The apparatus of claim 1 , wherein the encapsulation material includes one of HfO x , ZrO x , TaO x , TiO x , SiO x , SiN, SiCN, SiC, Al x O y , SiON, ALSiO x , HfSiO x , TaSiO x , AlN, ZrN, or HfN.
8. The apparatus of claim 1 , wherein the first hard mask layer includes one or more of: silicon dioxide (SiO 2 ), silicon nitride (Si x N y ), SiC, SiNC, and photoimagable epoxy, Al x O y , TaN, W, SiN, SiON, SiC, and tiN, tetra-ethyl Ortho-silicate (TEOS) or tetraethoxysilane (TEOS) bi-layer and tri-layer of these in any combination.
9. The apparatus of claim 1 , wherein the first memory device and the second memory device include linear dielectric.
10. The apparatus of claim 1 , wherein the first memory device or the second memory device comprises a capacitor.
11. The apparatus of claim 10 , wherein the capacitor comprises a non-linear polar material which includes one of: a ferroelectric material, a paraelectric material, or a non-linear dielectric.
12. The apparatus of claim 1 , wherein the first memory device or the second memory device is part of dynamic random-access memory.
13. The apparatus of claim 1 , wherein the first pedestal or the second pedestal include one or more of: Cu, Al, Ag, Au, Co, W, Fe, Ta, TaN, TiN, Ni, Ru, RuOx, Mo, doped polysilicon, or any combination of them.
14. The apparatus of claim 1 , wherein the first memory device or the second memory device occupies a region of a die which is otherwise reserved for via 1 and metal 2 layer.
15. The apparatus of claim 1 , wherein the first memory device or the second memory device occupies a region of a die which is otherwise reserved for via 1 , metal 2 layer, via 2 , and metal 3 layer.
16. A system comprising:
a processor circuitry to execute one or more instructions;
a memory to store the one or more instructions; and
a communication interface to allow the processor circuitry to communicate with another device, wherein the processor circuitry includes:
a first pedestal;
a second pedestal;
an etch stop layer, wherein the first pedestal is separated by the second pedestal by the etch stop layer;
a first memory device comprising a first stack of materials, wherein a first portion of the first stack of materials is on the first pedestal;
a second memory device comprising a second stack of materials, wherein a second portion of the second stack of materials is on the second pedestal;
a first hard mask layer on the first memory device;
a second hard mask layer on the first memory device, wherein the first hard mask layer and the second hard mask layer are separated by a first metal via;
a first protection layer on the first hard mask layer;
a second protection layer on the second hard mask layer, wherein the first protection layer and the second protection layer are separated by the first metal via;
a third hard mask layer on the second memory device;
a fourth hard mask layer on the second memory device, wherein the third hard mask layer and the fourth hard mask layer are separated by a second metal via;
a third protection layer on the third hard mask layer;
a fourth protection layer on the fourth hard mask layer, wherein the third protection layer and the fourth protection layer are separated by the second metal via; and
an encapsulation material between the first memory device, the second memory device, the second hard mask layer, the second protection layer; the third hard mask layer, and the third protection layer, wherein the encapsulation material is on the etch stop layer and separates an interlayer dielectric from the etch stop layer.
17. The system of claim 16 , wherein the encapsulation material is on the second protection layer and the third protection layer.
18. The system of claim 16 , wherein the encapsulation material is a first encapsulation material, wherein the etch stop layer is a first etch stop layer, wherein the processor circuitry includes a second etch stop layer, wherein the processor circuitry includes a second encapsulation material, wherein the second encapsulation material is on the second etch stop layer and on the first protection layer, and wherein the second encapsulation material is adjacent to the first memory device and the first hard mask layer.
19. The system of claim 18 , wherein the processor circuitry includes a third etch stop layer, wherein the processor circuitry includes a third encapsulation material, wherein the third encapsulation material is on the third etch stop layer and on the fourth protection layer, and wherein the third encapsulation material is adjacent to the second memory device and the fourth hard mask layer.
20. An apparatus comprising:
a memory region; and
a non-memory region adjacent to the memory region, wherein the memory region includes:
a pedestal;
an etch stop layer that extends to the non-memory region;
a memory device comprising a stack of materials, wherein a portion of the stack of materials is on the pedestal;
a first hard mask layer on the memory device;
a second hard mask layer on the memory device, wherein the first hard mask layer and the second hard mask layer are separated by a metal via;
a first protection layer on the first hard mask layer;
a second protection layer on the second hard mask layer, wherein the first protection layer and the second protection layer are separated by the metal via; and
an encapsulation material is on the etch stop layer and on the first protection layer, wherein the encapsulation material is adjacent to the memory device and the second hard mask layer, and wherein the encapsulation material is on the etch stop layer and separates an interlayer dielectric from the etch stop layer.