Integrated assemblies comprising vertically-stacked decks with interconnected conductive lines
Some embodiments include an integrated assembly having a base supporting first circuitry and first conductive lines. The first conductive lines extend along a first direction and are associated with the first circuitry. A deck is over the base and supports an array of memory cells and second conductive lines which are associated with the array of memory cells. The second conductive lines extend along a second direction which is substantially orthogonal to the first direction. Vertical interconnects extend from the deck to the base and couple the first conductive lines to the second conductive lines. Each of the vertical interconnects couples one of the first conductive lines to one of the second conductive lines. Each of the second conductive lines is coupled with only one of the first conductive lines.
1. An integrated assembly, comprising:
a base supporting first conductive lines and second conductive lines that extend parallel to each other in a first direction;
a deck over the base and comprising an array of memory cells in a single plane;
third conductive lines and fourth conductive lines supported by the deck and extending parallel to each other in a second direction different from the first direction; the third conductive lines extending from the array of the memory cells and an entirety of the structure of the third conductive lines extending outside of the array of memory cells being straight lines; and
first vertical interconnects and second vertical interconnects extending from the deck to the base, the first vertical interconnects coupling the first conductive lines to the third conductive lines and the second vertical interconnects coupling the second conductive lines to the fourth conductive lines; each of the first and second vertical interconnects coupling only one conductive line of the base to only one conductive line of the deck.
2. The integrated assembly of claim 1 wherein the first conductive lines comprise connections with sense amplifiers supported on the base.
3. The integrated assembly of claim 1 wherein the second conductive lines comprise connections with wordline drivers supported on the base.
4. The integrated assembly of claim 1 wherein the first direction is perpendicular to the second direction.
5. The integrated assembly of claim 1 wherein the deck comprises a first deck and the array of memory cells comprises a first array of a first memory cells, and wherein the base supports fifth conductive lines and sixth conductive lines that extend parallel to the first conductive lines and the second conductive lines, and further comprising:
a second deck over the first deck and comprising a second array of second memory cells;
seventh conductive lines and eight conductive lines supported by the second deck; and
third vertical interconnects and fourth vertical interconnects extending from the second deck to the base, the third vertical interconnects coupling the fifth conductive lines to the seventh conductive lines and the second vertical interconnects coupling the sixth conductive lines to the eight conductive lines; each of the third and fourth vertical interconnects coupling only one conductive line of the base to only one conductive line of the second deck.
6. The integrated assembly of claim 5 wherein the seventh and eight conductive lines supported by the second deck are parallel to each other.
7. The integrated assembly of claim 5 wherein the seventh and eight conductive lines supported by the second deck extend in the same direction as the third and fourth conductive lines supported by the first deck.
8. The integrated assembly of claim 1 wherein the base comprises an alignment mark.
9. The integrated assembly of claim 8 wherein the alignment mark comprises a single pattern only.
10. The integrated assembly of claim 1 wherein the base is comprised by a first semiconductor die and the deck is comprised by a second semiconductor die separate and discrete from the first semiconductor die.
11. The integrated assembly of claim 1 wherein the fourth conductive lines extend in the same plane as the array of the memory cells without contacting the array of the memory cells and in between ends of the fourth conductive lines are connections by digit lines connecting the array of the memory cells to the fourth conductive lines.
12. An integrated assembly, comprising:
a base supporting first conductive lines and second conductive lines that are on a same pitch as one another;
a deck over the base and comprising an array of memory cells in a single plane;
third conductive lines and fourth conductive lines supported by the deck and extending parallel to each other; the fourth conductive lines extending in the same plane as the array of the memory cells without contacting the array of the memory cells and in between ends of the fourth conductive lines are connections by digit lines connecting the array of the memory cells to the fourth conductive lines; and
first vertical interconnects and second vertical interconnects extending from the deck to the base, the first vertical interconnects coupling the first conductive lines to the third conductive lines and the second vertical interconnects coupling the second conductive lines to the fourth conductive lines; each of the first and second vertical interconnects coupling only one conductive line of the base to only one conductive line of the deck.
13. The integrated assembly of claim 12 wherein the first conductive lines comprise connections with sense amplifiers supported on the base.
14. The integrated assembly of claim 12 wherein the second conductive lines comprise connections with wordline drivers supported on the base.
15. The integrated assembly of claim 12 wherein the third conductive lines comprise digit line extensions.
16. The integrated assembly of claim 12 wherein the third and fourth conductive lines are on a same pitch as one another.
17. The integrated assembly of claim 12 wherein the deck comprises a first deck and the array of memory cells comprises a first array of a first memory cells, and wherein the base supports fifth conductive lines and sixth conductive lines that extend parallel to the first conductive lines and the second conductive lines, and further comprising:
a second deck over the first deck and comprising a second array of second memory cells;
seventh conductive lines and eight conductive lines supported by the second deck; and
third vertical interconnects and fourth vertical interconnects extending from the second deck to the base, the third vertical interconnects coupling the fifth conductive lines to the seventh conductive lines and the second vertical interconnects coupling the sixth conductive lines to the eight conductive lines; each of the third and fourth vertical interconnects coupling only one conductive line of the base to only one conductive line of the second deck.
18. The integrated assembly of claim 17 wherein the seventh and eight conductive lines are on a same pitch as one another.
19. The integrated assembly of claim 17 wherein the fifth and sixth conductive lines are on a same pitch as one another.
20. The integrated assembly of claim 12 wherein the base comprises an alignment mark.
21. The integrated assembly of claim 20 wherein the alignment mark comprises a single pattern only.
22. The integrated assembly of claim 12 wherein the base is comprised by a first semiconductor die and the deck is comprised by a second semiconductor die separate and discrete from the first semiconductor die.
23. The integrated assembly of claim 12 wherein the third conductive lines extend from the array of the memory cells and wherein an entirety of the structure of the third conductive lines that extend outside of the array of memory cells are straight lines.