Semiconductor devices and methods of manufacturing
Semiconductor devices and methods of manufactured are presented in which a first redistribution structure is formed, semiconductor devices are bonded to the first redistribution structure, and the semiconductor devices are encapsulated in an encapsulant. First openings are formed within the encapsulant, such as along corners of the encapsulant, in order to help relieve stress and reduce cracks.
1. A semiconductor device comprising:
a redistribution structure;
a first semiconductor die attached to the redistribution structure; and
an encapsulant encapsulating the first semiconductor die; and
a first opening extending into the encapsulant a first distance from a first surface, the first distance being less than a height of the encapsulant, the first surface being planar with the first semiconductor die, a bottom surface of the first opening being the encapsulant, wherein the first opening has a “C” shape.
2. The semiconductor device of claim 1 , further comprising a package substrate bonded to the redistribution structure.
3. The semiconductor device of claim 1 , further comprising a second semiconductor die attached to the redistribution structure.
4. The semiconductor device of claim 1 , wherein the encapsulant extends away from the first semiconductor die a first distance of between about 0.4 mm and about 1.2 mm.
5. The semiconductor device of claim 4 , wherein the first opening is separated from an edge of the encapsulant by a second distance of between about 50 μm and about 200 μm.
6. The semiconductor device of claim 1 , further comprising a first material at least partially filling the first opening.
7. The semiconductor device of claim 6 , wherein the first material is softer than the encapsulant.
8. A semiconductor device comprising:
a first semiconductor die bonded to a first redistribution layer;
a second semiconductor die bonded to the first redistribution layer;
an encapsulant encapsulating the first semiconductor die and the second semiconductor die, wherein a plurality of openings are located along respective corners of the encapsulant, wherein each wall of the plurality of openings is the encapsulant; and
a first material at least partially filling at least one of the plurality of openings.
9. The semiconductor device of claim 8 , wherein at least one of the plurality of openings has an “H” shape.
10. The semiconductor device of claim 8 , wherein at least one of the plurality of openings has a “C” shape.
11. The semiconductor device of claim 8 , wherein at least one of the plurality of openings has an “L” shape.
12. The semiconductor device of claim 8 , wherein at least one of the plurality of openings has a combination of an “H” shape and a triangle shape.
13. The semiconductor device of claim 8 , wherein the first material is softer than the encapsulant.
14. The semiconductor device of claim 8 , wherein at least one of the plurality of openings has a triangular shape.
15. A semiconductor device comprising:
a redistribution structure;
a first semiconductor die bonded to the redistribution structure;
a second semiconductor die bonded to the redistribution structure;
an encapsulant surrounding the first semiconductor die and the second semiconductor die, the encapsulant having a first surface that is coplanar with the first semiconductor die and the second semiconductor die; and
a first opening extending partially into the encapsulant from the first surface, the first opening being located between the first semiconductor die and a sidewall of the encapsulant, a bottom of the first opening being the encapsulant, wherein the first opening is filled with a first material, the first material being softer than the encapsulant.
16. The semiconductor device of claim 15 , wherein the first opening is in a shape of a “C”.
17. The semiconductor device of claim 15 , wherein the first opening is in a shape of a “H”.
18. The semiconductor device of claim 15 , wherein the first opening is in a shape of a triangle.
19. The semiconductor device of claim 15 , further comprising a package substrate bonded to the redistribution structure.
20. The semiconductor device of claim 15 , wherein the first material is an epoxy.