IGBT with electric field relaxation doping profile
Provided is a semiconductor device that includes a drift region that is of a first conductivity type and is provided in a semiconductor substrate; a base region that is of a second conductivity type and is provided above the drift region; an accumulation region that is of the first conductivity type provided between the base region and the drift region; and an electric field relaxation region that is provided between the base region and the accumulation region, wherein the boundary between the electric field relaxation region and the accumulation region is a location for a half-value for the peak of the doping concentration of the accumulation region, and an integrated concentration of the electric field relaxation region is greater than or equal to 5E14 cm −2 and less than or equal to 5E15 cm −2 .
1. A semiconductor device, comprising:
a drift region that is of a first conductivity type and is provided in a semiconductor substrate;
a base region that is of a second conductivity type and is provided above the drift region; and
an accumulation region that is of the first conductivity type, is provided between the base region and the drift region, and has a higher doping concentration than the drift region,
wherein
the semiconductor device has a doping concentration distribution in a depth direction of the semiconductor device in which a film thickness of an electric field relaxation region that is of the first conductivity type is greater than or equal to 0.4 μm and less than or equal to 3.0 μm, the electric field relaxation region being a region from a location of a PN junction at a lower end of the base region to a location of a half-value of a peak of the accumulation region on the base region side.
2. The semiconductor device according to claim 1 , wherein the semiconductor device has the doping concentration distribution in which the film thickness of the electric field relaxation region is greater than or equal to 1.0 μm and less than or equal to 1.8 μm.
3. The semiconductor device according to claim 1 , wherein the semiconductor device has the doping concentration distribution in which the film thickness of the electric field relaxation region is greater than or equal to 1.5 μm and less than or equal to 2.0 μm.
4. The semiconductor device according to claim 1 , wherein the drift region is a remaining region having a doping concentration of the semiconductor substrate.
5. The semiconductor device according to claim 1 , wherein the semiconductor device has the doping concentration distribution in which the film thickness of the electric field relaxation region is less than or equal to a film thickness of the accumulation region.
6. The semiconductor device according to claim 1 , wherein the semiconductor device has the doping concentration distribution in which the electric field relaxation region includes a peak that is less than the half-value of the peak of the accumulation region.
7. The semiconductor device according to claim 1 , wherein the peak of the accumulation region is a maximum value of the doping concentration of the accumulation region in the doping concentration distribution.
8. A semiconductor device, comprising:
a drift region that is of a first conductivity type and is provided in a semiconductor substrate;
a base region that is of a second conductivity type and is provided above the drift region; and
an accumulation region that is of the first conductivity type, is provided between the base region and the drift region, and has a higher doping concentration than the drift region, wherein
the semiconductor device has a doping concentration distribution in a depth direction of the semiconductor device in which a distance from a location of a PN junction at a lower end of the base region to a location of a half-value of a maximum value of the doping concentration of the accumulation region on the base region side is greater than or equal to 0.4 μm and less than or equal to 3.0 μm.
9. The semiconductor device according to claim 1 , comprising trench portions that are arrayed in a predefined array direction in a front surface of the semiconductor substrate, the trench portions including a gate trench portion and a dummy trench portion.
10. The semiconductor device according to claim 9 , wherein the gate trench portion and the dummy trench portion are repeatedly arrayed in a predefined pattern in the array direction.
11. The semiconductor device according to claim 9 , wherein the doping concentration distribution is a doping concentration distribution in a first mesa portion sandwiched between the gate trench portion and the dummy trench portion in the array direction.
12. The semiconductor device according to claim 9 , wherein the doping concentration distribution is a doping concentration distribution in a second mesa portion sandwiched between two dummy trench portions in the array direction.
13. The semiconductor device according to claim 9 , comprising:
an emitter region that is of the first conductivity type and is provided in the front surface side of the semiconductor substrate than the base region, and has a higher doping concentration than the accumulation region;
a contact region that is of the second conductivity type and is provided in the front surface side of the semiconductor substrate than the base region, and has a higher doping concentration than the base region.
14. The semiconductor device according to claim 13 , wherein the location of the PN junction at the lower end of the base region in the doping concentration distribution is located within a range that is greater than or equal to 1.5 μm and less than or equal to 2.5 μm from the front surface of the semiconductor substrate.
15. The semiconductor device according to claim 14 , wherein a lower end of the accumulation region in the doping concentration distribution is located within a range that is greater than or equal to 2.5 μm and less than or equal to 5.0 μm from the front surface of the semiconductor substrate.
16. The semiconductor device according to claim 8 , wherein the maximum value of the doping concentration of the accumulation region in the doping concentration distribution is located within a range that is greater than or equal to 2.0 μm and less than or equal to 4.5 μm from the front surface of the semiconductor substrate.
17. The semiconductor device according to claim 1 , wherein the doping concentration of the accumulation region in the doping concentration distribution is lower than a maximum value of a doping concentration of the base region.
18. The semiconductor device according to claim 1 , wherein the semiconductor device has the doping concentration distribution in which a film thickness of the accumulation region is greater than or equal to 0.5 μm and less than or equal to 1.5 μm.