Substrate processing method
A substrate processing apparatus includes: a mixer configured to mix sulfuric acid as a first component and a second component different from the first component to prepare an etchant; a nozzle configured to eject the etchant to a substrate; a first component supplier including a first flow path that supplies the first component to the mixer, a first instantaneous flowmeter and a first flow rate controller provided in the first flow path; a second component supplier including a second flow path different from the first flow path and configured to supply the second component to the mixer, a second instantaneous flowmeter and a second flow rate controller provided in the second flow path; and a controller configured to control the first and second flow rate controllers using average flow rates of the first component and the second component during the ejection of the etchant to the substrate.
1. A substrate processing method comprising:
sending sulfuric acid as a first component from a first flow path to a mixer and sending a second component different from the first component from a second flow path different from the first flow path to the mixer;
mixing the first component and the second component by the mixer to prepare an etchant; and
ejecting the etchant from a nozzle connected to the mixer to a substrate,
wherein the substrate processing method further comprises:
measuring an instantaneous flow rate of the first component in the first flow path by a first instantaneous flowmeter provided in the first flow path and measuring an instantaneous flow rate of the second component in the second flow path by a second instantaneous flowmeter provided in the second flow path, during ejection of the etchant to the substrate; and
controlling a first flow rate controller provided in the first flow path and a second flow rate controller provided in the second flow path using an average flow rate of the first component and an average flow rate of the second component, during the ejection of the etchant to the substrate.
2. The substrate processing method of claim 1 , further comprising: during the ejection of the etchant to the substrate, controlling the first flow rate controller such that the average flow rate of the first component from start of the ejection of the etchant to the substrate to end of the ejection of the etchant to the substrate matches a first preset target value, and controlling the second flow rate controller such that the average flow rate of the second component from the start of the ejection of the etchant to the substrate to the end of the ejection to the substrate matches a second preset target value.
3. The substrate processing method of claim 2 , further comprising: determining that an abnormality has occurred when the average flow rate of the first component or the average flow rate of the second component is out of a permissible range, during the ejection of the etchant to the substrate.
4. The substrate processing method of claim 1 , wherein the controlling the first flow rate controller and the second flow rate controller includes controlling the first flow rate controller and the second flow rate controller such that a ratio of the average flow rate of the first component to the average flow rate of the second component per a unit time matches a first preset target value, during the ejection of the etchant to the substrate, and
wherein the unit time is 2 times or more and 20 times or less a measurement cycle of the instantaneous flow rate of the first component or the instantaneous flow rate of the second component.
5. The substrate processing method of claim 4 , further comprising: determining that an abnormality has occurred when the average flow rate of the first component or the average flow rate of the second component is out of a permissible range, during the ejection of the etchant to the substrate.
6. The substrate processing method of claim 1 , further comprising: determining that an abnormality has occurred when the average flow rate of the first component or the average flow rate of the second component is out of a permissible range, during the ejection of the etchant to the substrate.