Imaging element
An imaging element according to an embodiment of the present disclosure includes: a first substrate, a second substrate, and a third substrate that are stacked in this order. The first substrate including a sensor pixel that performs photoelectric conversion and the second substrate including a readout circuit are electrically coupled to each other by a first through wiring line provided in an interlayer insulating film. The second substrate and the third substrate including a logic circuit are electrically coupled to each other by a junction between pad electrodes or a second through wiring line penetrating through a semiconductor substrate.
1. An imaging element, comprising:
a first section including a first semiconductor substrate, the first semiconductor substrate including a photoelectric converter and a floating diffusion;
a second section including an insulating layer and a second semiconductor substrate, the second semiconductor substrate including a readout circuit for reading out a pixel signal from the floating diffusion, wherein the readout circuit comprises:
a first transistor at least partially disposed in the second semiconductor substrate; and
a second transistor at least partially disposed in the second semiconductor substrate; and
a third section including a third semiconductor substrate, the third semiconductor substrate including a logic circuit for processing the pixel signal, wherein the second section is sandwiched between the first section and the third section; and
a through electrode that penetrates through the insulating layer and electrically connects the floating diffusion to the readout circuit, wherein the through electrode is between the first transistor and the second transistor, and wherein the second semiconductor substrate comprises a first semiconductor region and a second semiconductor region electrically isolated from the first semiconductor region by the insulating layer.
2. The imaging element of claim 1 , wherein the second transistor is electrically isolated from the first transistor by the insulating layer.
3. The imaging element of claim 1 , wherein the first transistor is at least partially disposed in the first semiconductor region, and wherein the second transistor is at least partially disposed in the second semiconductor region.
4. The imaging element of claim 3 , wherein the first transistor is an amplification transistor, and wherein the second transistor is a reset transistor.
5. The imaging element of claim 3 , wherein the readout circuit comprises a third transistor at least partially disposed in the second semiconductor region.
6. The imaging element of claim 5 , wherein the first transistor is an amplification transistor, and wherein the second transistor is a reset transistor, and wherein the third transistor is a selection transistor.
7. The imaging element of claim 1 , wherein the photoelectric converter is one of a plurality of photoelectric converters and the floating diffusion is one of a plurality of floating diffusions, and wherein the plurality of photoelectric converters and the plurality of floating diffusions share the readout circuit.
8. The imaging element of claim 1 , wherein the first semiconductor substrate comprises a transfer transistor that transfers electric charge from the photoelectric converter to the floating diffusion.
9. The imaging element of claim 1 , wherein the logic circuit comprises a drive circuit.
10. An electronic apparatus, comprising:
a signal processing circuit; and
an imaging element, comprising:
a first section including a first semiconductor substrate, the first semiconductor substrate including a photoelectric converter and a floating diffusion;
a second section including an insulating layer and a second semiconductor substrate, the second semiconductor substrate including a readout circuit for reading out a pixel signal from the floating diffusion, wherein the readout circuit comprises:
a first transistor at least partially disposed in the second semiconductor substrate; and
a second transistor at least partially disposed in the second semiconductor substrate; and
a third section including a third semiconductor substrate, the third semiconductor substrate including a logic circuit for processing the pixel signal, wherein the second section is sandwiched between the first section and the third section; and
a through electrode that penetrates through the insulating layer and electrically connects the floating diffusion to the readout circuit, wherein the through electrode is between the first transistor and the second transistor, and wherein the second semiconductor substrate comprises a first semiconductor region and a second semiconductor region electrically isolated from the first semiconductor region by the insulating layer.
11. The electronic apparatus of claim 10 , wherein the second transistor is electrically isolated from the first transistor by the insulating layer.
12. The electronic apparatus of claim 10 , wherein the first transistor is at least partially disposed in the first semiconductor region, and wherein the second transistor is at least partially disposed in the second semiconductor region.
13. The electronic apparatus of claim 12 , wherein the first transistor is an amplification transistor, and wherein the second transistor is a reset transistor.
14. The electronic apparatus of claim 12 , wherein the readout circuit comprises a third transistor at least partially disposed in the second semiconductor region.
15. The electronic apparatus of claim 14 , wherein the first transistor is an amplification transistor, and wherein the second transistor is a reset transistor, and wherein the third transistor is a selection transistor.
16. The electronic apparatus of claim 10 , wherein the photoelectric converter is one of a plurality of photoelectric converters and the floating diffusion is one of a plurality of floating diffusions, and wherein the plurality of photoelectric converters and the plurality of floating diffusions share the readout circuit.
17. The electronic apparatus of claim 10 , wherein the first semiconductor substrate comprises a transfer transistor that transfers electric charge from the photoelectric converter to the floating diffusion.
18. The electronic apparatus of claim 10 , wherein the logic circuit comprises a drive circuit.