Solid-state imaging device with anti-reflection film
A solid-state imaging device according to the present embodiment includes a semiconductor region and an antireflection film. In the semiconductor region, a blue photodiode that detects blue light, a green photodiode that detects green light, and a red photodiode that detects red light are arranged. The antireflection film includes a first insulating film disposed on the semiconductor region and a second insulating film disposed on the first insulating film and having a refractive index higher than a refractive index of the first insulating film. At least one of the first insulating film and the second insulating film has a film thickness in a region through which light received by the blue photodiode is transmitted thinner than a film thickness in a region through which light received by the green photodiode is transmitted.
1. A solid-state imaging device comprising:
a semiconductor region in which a blue photodiode that detects blue light, a green photodiode that detects green light, and a red photodiode that detects red light are arranged;
an antireflection film including a first insulating film disposed on the semiconductor region and a second insulating film disposed on the first insulating film and having a refractive index higher than a refractive index of the first insulating film; and
a color filter disposed on the antireflection film,
wherein the color filter includes a blue color filter that attenuates light in a wavelength band other than a blue wavelength band among light incident on the blue photodiode, a green color filter that attenuates light in a wavelength band other than a green wavelength band among light incident on the green photodiode and a red color filter that attenuates light in a wavelength band other than a red wavelength band among light incident on the red photodiode,
wherein no lenses are disposed on the blue color filter, the green color filter and the red color filter,
wherein the first insulating film has a film thickness in a blue region through which light received by the blue photodiode is transmitted thinner than a film thickness in a green region through which light received by the green photodiode is transmitted.
2. The solid-state imaging device according to claim 1 , wherein the first insulating film is made of silicon oxide, and the second insulating film is made of silicon nitride.
3. The solid-state imaging device according to claim 1 , wherein the first insulating film is made of aluminum oxide, and the second insulating film is made of zirconium oxide.
4. The solid-state imaging device according to claim 1 , wherein the first insulating film is made of silicon oxide, and the second insulating film is made of hafnium oxide.
5. The solid-state imaging device according to claim 1 , wherein the antireflection film includes a third insulating film disposed on the second insulating film and having a refractive index lower than a refractive index of the second insulating film.
6. A solid-state imaging device comprising:
a semiconductor region in which a blue photodiode that detects blue light, a green photodiode that detects green light, and a red photodiode that detects red light are arranged;
an antireflection film including a first insulating film disposed on the semiconductor region and a second insulating film disposed on the first insulating film and having a refractive index higher than a refractive index of the first insulating film; and
a color filter disposed on the antireflection film,
wherein the color filter includes a blue color filter that attenuates light in a wavelength band other than a blue wavelength band among light incident on the blue photodiode, a green color filter that attenuates light in a wavelength band other than a green wavelength band among light incident on the green photodiode and a red color filter that attenuates light in a wavelength band other than a red wavelength band among light incident on the red photodiode,
wherein no lenses are disposed on the blue color filter, the green color filter and the red color filter,
wherein at least one of the first insulating film and the second insulating film has a film thickness in a blue region through which light received by the blue photodiode is transmitted thinner than a film thickness in a green region through which light received by the green photodiode is transmitted, wherein
in the first insulating film, a first film thickness in the blue region is thinner than a second film thickness in the green region, and the second film thickness is thinner than a third film thickness in a red region through which light received by the red photodiode is transmitted, and
in the second insulating film, a fourth film thickness in the blue region is less than or equal to a fifth film thickness in the green region, and the fifth film thickness is thinner than a sixth film thickness in the red region.
7. The solid-state imaging device according to claim 6 , wherein the first insulating film is made of silicon oxide, and the second insulating film is made of silicon nitride.
8. The solid-state imaging device according to claim 6 , wherein the first insulating film is made of aluminum oxide, and the second insulating film is made of zirconium oxide.
9. The solid-state imaging device according to claim 6 , wherein the first insulating film is made of silicon oxide, and the second insulating film is made of hafnium oxide.
10. A solid-state imaging device comprising:
a semiconductor region in which a blue photodiode that detects blue light, a green photodiode that detects green light, and a red photodiode that detects red light are arranged;
an antireflection film including a first insulating film disposed on the semiconductor region and a second insulating film disposed on the first insulating film and having a refractive index higher than a refractive index of the first insulating film; and
a color filter disposed on the antireflection film,
wherein the color filter includes a blue color filter that attenuates light in a wavelength band other than a blue wavelength band among light incident on the blue photodiode, a green color filter that attenuates light in a wavelength band other than a green wavelength band among light incident on the green photodiode and a red color filter that attenuates light in a wavelength band other than a red wavelength band among light incident on the red photodiode,
wherein no lenses are disposed on the blue color filter, the green color filter and the red color filter,
wherein at least one of the first insulating film and the second insulating film has a film thickness in a blue region through which light received by the blue photodiode is transmitted thinner than a film thickness in a green region through which light received by the green photodiode is transmitted, wherein
in the first insulating film, a first film thickness in the blue region is thinner than a second film thickness in the green region, and a magnitude of the second film thickness is less than or equal to a magnitude of a third film thickness in a red region through which light received by the red photodiode is transmitted, and
in the second insulating film, a fourth film thickness in the blue region, a fifth film thickness in the green region, and a sixth film thickness in the red region are identical in magnitude.
11. The solid-state imaging device according to claim 10 , wherein the first insulating film is made of silicon oxide, and the second insulating film is made of silicon nitride.
12. The solid-state imaging device according to claim 10 , wherein the first insulating film is made of aluminum oxide, and the second insulating film is made of zirconium oxide.
13. The solid-state imaging device according to claim 10 , wherein the first insulating film is made of silicon oxide, and the second insulating film is made of hafnium oxide.
14. A solid-state imaging device comprising:
a semiconductor region in which a blue photodiode that detects blue light, a green photodiode that detects green light, and a red photodiode that detects red light are arranged;
an antireflection film including a first insulating film disposed on the semiconductor region and a second insulating film disposed on the first insulating film and having a refractive index higher than a refractive index of the first insulating film; and
a color filter disposed on the antireflection film,
wherein the color filter includes a blue color filter that attenuates light in a wavelength band other than a blue wavelength band among light incident on the blue photodiode, a green color filter that attenuates light in a wavelength band other than a green wavelength band among light incident on the green photodiode and a red color filter that attenuates light in a wavelength band other than a red wavelength band among light incident on the red photodiode,
wherein no lenses are disposed on the blue color filter, the green color filter and the red color filter,
wherein at least one of the first insulating film and the second insulating film has a film thickness in a blue region through which light received by the blue photodiode is transmitted thinner than a film thickness in a green region through which light received by the green photodiode is transmitted, wherein
in the first insulating film, a first film thickness in the blue region, a second film thickness in the green region, and a third film thickness in a red region through which light received by the red photodiode is transmitted are identical in magnitude, and
in the second insulating film, a fourth film thickness in the blue region is thinner than a fifth film thickness in the green region, and a magnitude of the fifth film thickness is less than or equal to a magnitude of a sixth film thickness in the red region.
15. The solid-state imaging device according to claim 14 , wherein the first insulating film is made of silicon oxide, and the second insulating film is made of silicon nitride.
16. The solid-state imaging device according to claim 14 , wherein the first insulating film is made of aluminum oxide, and the second insulating film is made of zirconium oxide.
17. The solid-state imaging device according to claim 14 , wherein the first insulating film is made of silicon oxide, and the second insulating film is made of hafnium oxide.