Semiconductor device and method of manufacturing the same
View Patent ↗In a method of manufacturing a semiconductor device, the semiconductor device includes a non-volatile memory formed in a memory cell area and a ring structure area surrounding the memory cell area. In the method, a protrusion of a substrate is formed in the ring structure area. The protrusion protrudes from an isolation insulating layer. A high-k dielectric film is formed, thereby covering the protrusion and the isolation insulating layer. A poly silicon film is formed over the high-k dielectric film. The poly silicon film and the high-k dielectric film are patterned. Insulating layers are formed over the patterned poly silicon film and high-k dielectric film, thereby sealing the patterned high-k dielectric film.
1. A semiconductor device, comprising:
a non-volatile memory disposed over a substrate in a memory cell area;
a logic circuit disposed over the substrate in a peripheral area;
a protrusion of the substrate disposed between the memory cell area and the peripheral area,
wherein the protrusion surrounds the memory cell area in plan view and the protrusion extends from the substrate along a first direction;
a first isolation insulating layer disposed in the substrate between the memory cell area and the protrusion;
a second isolation insulating layer disposed in the substrate between the protrusion and the peripheral area;
a first dielectric layer disposed over the first isolation insulating layer and the protrusion;
a first poly silicon layer disposed over the first dielectric layer;
a second dielectric layer disposed over the protrusion and the second isolation insulating layer,
wherein the second dielectric layer is spaced apart from the first dielectric layer; and
a second poly silicon layer disposed over the second dielectric layer,
wherein the second poly silicon layer is spaced apart from the first poly silicon layer,
wherein a height of an uppermost surface of the protrusion along the first direction is greater than a height of an uppermost surface of the second isolation insulating layer along the first direction, and
wherein the height of the uppermost surface of the second isolation insulating layer along the first direction is greater than a height of the first isolation insulating layer along the first direction.
2. The semiconductor device of claim 1 , wherein the first and second dielectric layers are made of a high-k dielectric material.
3. The semiconductor device of claim 2 , wherein the high-k dielectric material is made of an oxide of at least one element selected from the group consisting of Y, Ta, Ti, Al and Zr.
4. The semiconductor device of claim 2 , wherein the high-k dielectric material is made of hafnium oxide.
5. The semiconductor device of claim 1 , further comprising an interlayer dielectric layer disposed over the memory cell area, the peripheral area, and the protrusion.
6. The semiconductor device of claim 1 , further comprising a first capping layer disposed between the first dielectric layer and the first poly silicon layer and a second capping layer disposed between the second dielectric layer and the second poly silicon layer.
7. The semiconductor device of claim 6 , wherein the first capping layer and the second capping layer are made of TiN or TaN.
8. The semiconductor device of claim 1 , further comprising a first interfacial layer disposed between the protrusion and the first dielectric layer and a second interfacial layer disposed between the protrusion and the second dielectric layer.
9. A semiconductor device, comprising:
a memory cell area disposed over a substrate;
a peripheral area including a logic circuit disposed over the substrate;
a protrusion protruding from the substrate in a first direction disposed between the memory cell area and the peripheral area,
wherein the protrusion surrounds the memory cell area in plan view;
a first isolation insulating layer disposed in the substrate between the memory cell area and the protrusion;
a second isolation insulating layer disposed in the substrate between the protrusion and the peripheral area;
a diffusion region disposed in the protrusion;
a first high-k dielectric layer disposed over the first isolation insulating layer and the protrusion;
a first poly silicon layer disposed over the first high-k dielectric layer and the protrusion;
a second high-k dielectric layer disposed over the second isolation insulating layer; and
a second poly silicon layer disposed over the second high-k dielectric layer,
wherein a height of an uppermost surface of the diffusion region along the first direction is greater than a height of an uppermost surface of the second isolation insulating layer along the first direction, and
wherein the height of the uppermost surface of the second isolation insulating layer along the first direction is greater than a height of the first isolation insulating layer along the first direction.
10. The semiconductor device of claim 9 , wherein the first high-k dielectric layer and the second high-k dielectric layer are made of an oxide of at least one element selected from the group consisting of Y, Ta, Ti, Al and Zr.
11. The semiconductor device of claim 9 , wherein the first high-k dielectric layer and the second high-k dielectric layer are made of hafnium oxide.
12. The semiconductor device of claim 9 , further comprising an interlayer dielectric layer disposed over the memory cell area, the peripheral area, and the protrusion.
13. The semiconductor device of claim 9 , further comprising a first capping layer disposed between the first high-k dielectric layer and the first poly silicon layer and a second capping layer disposed between the second high-k dielectric layer and the second poly silicon layer.
14. The semiconductor device of claim 13 , wherein the first capping layer and the second capping layer are made of TiN or TaN.
15. The semiconductor device of claim 9 , further comprising a first interfacial layer disposed between the protrusion and the first high-k dielectric layer and a second interfacial layer disposed between the protrusion and the second high-k dielectric layer.
16. The semiconductor device of claim 9 , wherein the diffusion region includes an impurity selected from the group consisting of BF 2 , P, As, and Sb.
17. A semiconductor device, comprising:
a memory cell area disposed over a substrate;
a peripheral area including a logic circuit disposed over the substrate;
a protrusion of the substrate extending from the substrate in a first direction disposed between the memory cell area and the peripheral area,
wherein the protrusion surrounds the memory cell area in plan view;
a first isolation insulating layer disposed in the substrate between the memory cell area and the protrusion;
a second isolation insulating layer disposed in the substrate between the protrusion and the peripheral area;
a first dielectric layer disposed over the first isolation insulating layer and the protrusion;
a first poly silicon layer disposed over the first dielectric layer;
a second dielectric layer disposed over the second isolation insulating layer and the protrusion,
wherein the second isolation insulating layer is spaced apart from the first isolation insulating layer;
a second poly silicon layer disposed over the second dielectric layer;
first sidewall spacers disposed along the first dielectric layer and the first poly silicon layer; and
second sidewall spacers disposed along the second dielectric layer and the second poly silicon layer,
wherein the first and second dielectric layers and the first and second poly silicon layers are step-shaped,
the first dielectric layer is bounded by the first isolation insulating layer, the first sidewall spacer, the first poly silicon layer and the protrusion, and
the second dielectric layer is bounded by the second isolation insulating layer, the second sidewall spacer, the second poly silicon layer and the protrusion.
18. The semiconductor device of claim 17 , wherein the first and second dielectric layers are made of a high-k dielectric material.
19. The semiconductor device of claim 18 , wherein the high-k dielectric material is made of an oxide of at least one element selected from the group consisting of Y, Ta, Ti, Al and Zr.
20. The semiconductor device of claim 18 , wherein the high-k dielectric material is made of hafnium oxide.