Memory device and method for fabricating the same
A memory device includes a substrate, an active layer that is spaced apart from the substrate and laterally oriented, a word line that is laterally oriented in parallel to the active layer along one side of the active layer, an active body that is vertically oriented by penetrating through the active layer, a bit line that is vertically oriented by penetrating through the active layer to be spaced apart from one side of the active body, and a capacitor that is vertically oriented by penetrating through the active layer to be spaced apart from another side of the active body.
1. A memory device, comprising:
a lower structure;
an active layer that is spaced apart from, and laterally oriented to, the lower structure;
a word line that is laterally oriented in parallel to the active layer along one side of the active layer;
an active body that is vertically oriented by penetrating through the active layer;
a bit line that is vertically oriented by penetrating through the active layer to be spaced apart from one side of the active body; and
a capacitor coupled to the active layer and spaced apart from another side of the active body.
2. The memory device of claim 1 , wherein the active layer and the word line are positioned at a same level.
3. The memory device of claim 1 , wherein the active layer includes:
a first source/drain region coupled to the bit line;
a second source/drain region coupled to the capacitor; and
a channel body coupled to the active body and laterally oriented between the first source/drain region and the second source/drain region.
4. The memory device of claim 3 , wherein the channel body has a shape surrounding the active body.
5. The memory device of claim 1 , wherein the capacitor includes:
a storage node laterally oriented in parallel to the lower structure;
a dielectric layer over the storage node; and
a plate node over the dielectric layer,
wherein the dielectric layer and the plate node are vertically oriented by penetrating through the storage node.
6. The memory device of claim 5 , wherein the storage node and the active layer are positioned at the same level.
7. The memory device of claim 1 , further comprising:
a bit line contact node formed in the active layer and surrounding the bit line.
8. The memory device of claim 1 , wherein at least one end of the word line has a stepped portion.