Solid state lighting devices with dielectric insulation and methods of manufacturing
Semiconductor lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a semiconductor lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The semiconductor lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.
1. A semiconductor lighting device, comprising:
a first semiconductor material;
a second semiconductor material;
an active region disposed between the first and second semiconductor materials;
a lattice dislocation extending through the active region and at least partially through the first semiconductor material;
a conductive material over and in contact with the second semiconductor material; and
an insulating material disposed in the lattice dislocation and electrically insulating (1) at least a portion of the first semiconductor material from the second semiconductor material, (2) the conductive material from at least one of the active region and the first semiconductor material, or both,
wherein the lattice dislocation includes sidewalls that are surrounded by at least one of the first semiconductor material, the second semiconductor material, and the active region,
wherein the sidewalls extend from a surface of the second semiconductor material into the active region, and
wherein the conductive material includes (a) a first conductive portion over the second semiconductor material and (b) a second conductive portion between the sidewalls of the lattice dislocation and below an upper surface of the insulating material.
2. The semiconductor lighting device of claim 1 , wherein the conductive material includes an electrical contact disposed on the surface of the second semiconductor material and over the insulating material.
3. The semiconductor lighting device of claim 1 , wherein the surface of the second semiconductor material faces away from the active region.
4. The semiconductor lighting device of claim 1 , wherein the insulating material is interposed between the conductive material and the active region and between the conductive material and the first semiconductor material.
5. The semiconductor lighting device of claim 1 , wherein the active region includes at least one of an indium gallium nitride single quantum well, gallium nitride (GaN)/indium gallium nitride (InGaN) multiple quantum wells, and an InGaN bulk material.
6. The semiconductor lighting device of claim 1 , wherein the conductive material is different from the first and second semiconductor materials.
7. The semiconductor lighting device of claim 1 , wherein the conductive material comprises silver.
8. The semiconductor lighting device of claim 1 , wherein the lattice dislocation includes a V-shaped defect, an edge dislocation, a threading dislocation, or a combination thereof.
9. The semiconductor lighting device of claim 1 , wherein the lattice dislocation extends completely through the second semiconductor material.
10. A solid state lighting device, comprising:
a first semiconductor;
a second semiconductor;
an active region disposed between the first and second semiconductors;
a crystallographic defect including sidewalls extending through the active region and at least partially through the first semiconductor;
a conductive material over and in contact with the second semiconductor; and
an insulating material disposed in the crystallographic defect and electrically insulating (1) at least a portion of the first semiconductor from the second semiconductor, (2) the conductive material from at least one of the active region and the first semiconductor, or both,
wherein the conductive material includes (a) a first conductive portion over the second semiconductor material and (b) a second conductive portion between the sidewalls of the crystallographic defect and below an upper surface of the insulating material.
11. The solid state lighting device of claim 10 , wherein:
a topmost surface of the active region faces away from the first semiconductor and toward the conductive material; and
the insulating material is between at least a portion of the first semiconductor and the second semiconductor and between the active region and at least a portion of the second semiconductor.
12. The solid state lighting device of claim 10 , wherein a topmost surface of the active region contacts the second semiconductor.