Integrated circuit photodetector
An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.
1. A method, comprising:
forming a trench in a semiconductor substrate of an integrated circuit;
forming one or more dielectric structures of dielectric material protruding from a bottom surface of the trench; and
depositing a photosensitive material in the trench covering the one or more dielectric structures, wherein the photosensitive material has an index of refraction that is higher than an index of refraction the dielectric material of the one or more dielectric structures.
2. The method of claim 1 , comprising depositing a layer of dielectric material on the photosensitive material, wherein the dielectric material of the layer of dielectric material has an index of refraction that is less than the index of refraction of the photosensitive material.
3. The method of claim 2 , further comprising depositing a dielectric sidewall coating of dielectric material on sidewalls of the trench, wherein depositing the photosensitive material includes covering the dielectric sidewall coating on the sidewalls of the trench with the photosensitive material.
4. The method of claim 1 , comprising forming control in the integrated circuit.
5. The method of claim 4 , comprising detecting, with the control circuitry, light incident on the photosensitive material based on an electrical current from the photosensitive material.
6. The method of claim 1 , wherein the one or more dielectric structures include one or more columns extending from the bottom of the trench.
7. The method of claim 6 , wherein the columns terminate at or below a top of the trench.
8. The method of claim 1 , further comprising forming a lens configured to focus light on the photosensitive material.
9. The method of claim 1 , wherein the photosensitive material and the semiconductor substrate act as a photodetector that detects light by absorbing photons in the photosensitive layer and generating electrical signals indicative of the photons absorbed by the photosensitive material.
10. The integrated circuit of claim 9 , wherein the photodetector is a photodiode.
11. The integrated circuit of claim 1 , wherein the photosensitive material includes germanium.
12. A method comprising:
forming a trench in a semiconductor substrate of an integrated circuitry;
forming a first pillar of dielectric material protruding from a bottom of the trench to a height lower than a top of the semiconductor substrate; and
forming a photosensitive material on the semiconductor material, the photosensitive material covering the pillar of dielectric material and having an index of refraction greater than an index of refraction of the pillar of dielectric material.
13. The method of claim 12 , wherein the photosensitive material includes germanium.
14. The method of claim 12 , further comprising forming a lens configured to focus light on the photosensitive material.
15. The method of claim 12 , wherein the photosensitive material and the semiconductor substrate act as a photodetector that detects light by absorbing photons in the photosensitive layer and generating electrical signals indicative of the photons absorbed by the photosensitive material.
16. The method of claim 12 , comprising:
depositing a dielectric sidewall coating of dielectric material on sidewalls of the trench, wherein depositing the photosensitive material includes covering the dielectric sidewall coating on the sidewalls of the trench with the photosensitive material
depositing a layer of dielectric material on the photosensitive material, wherein the dielectric material of the layer of dielectric material has an index of refraction that is less than the index of refraction of the photosensitive material.
17. A method, comprising:
forming a plurality of trenches in a semiconductor substrate;
forming one or more dielectric structures of dielectric material protruding from a bottom surface of each trench;
depositing a photosensitive material positioned in each trench covering the one or more dielectric structures and having an index of refraction greater than an index of refraction of the dielectric material of the one or more dielectric structures;
forming a layer of dielectric material covering the photosensitive material in each trench, the dielectric material of the layer of dielectric material having an index of refraction that is lower than the index of refraction of the photosensitive material; and
forming a plurality of lenses each configured to focus light onto the photosensitive material in a respective trench.
18. The method of claim 17 , wherein the semiconductor substrate and the photosensitive material are in a first integrated circuit, the method further comprising boding a second integrated circuit to the first integrated circuit, the second integrated circuit including control circuitry configured to receive electrical signals from the photosensitive material responsive to light incident on the photosensitive material.
19. The method of claim 18 , comprising forming, in the first integrated circuit, a plurality of transistors communicatively coupled to the photosensitive material.
20. The method of claim 17 , further comprising depositing a dielectric sidewall coating of dielectric material on sidewalls of the trenches, wherein depositing the photosensitive material includes covering the dielectric sidewall coating on the sidewalls of the trenches with the photosensitive.