Wiring board and semiconductor device each having non-photosensitive thermosetting encapsulating layer over photosensitive resin layer of interconnect structure
A wiring board includes an interconnect structure including a plurality of interconnect layers, and a plurality of insulating layers having a photosensitive resin as a main component thereof, and an encapsulating resin layer having a non-photosensitive thermosetting resin as a main component thereof, laminated on an uppermost insulating layer of the plurality of insulating layers. An uppermost interconnect layer of the plurality of interconnect layers includes a pad protruding from the uppermost insulating layer. The encapsulating resin layer exposes an upper surface of the pad, and covers at least a portion of a side surface of the pad, and at least a portion of side surfaces of the plurality of insulating layers. The pad is configured to receive a semiconductor chip to be mounted thereon.
1. A wiring board comprising:
a first interconnect structure including a plurality of first interconnect layers, and a plurality of insulating layers having a photosensitive resin as a main component thereof; and
an encapsulating resin layer having a non-photosensitive thermosetting resin as a main component thereof, laminated on an uppermost first insulating layer of the plurality of first insulating layers, wherein:
an uppermost first interconnect layer of the plurality of first interconnect layers includes a pad protruding from the uppermost first insulating layer,
the encapsulating resin layer exposes an upper surface of the pad, and covers at least a portion of a side surface of the pad, and at least a portion of side surfaces of the plurality of first insulating layers,
a thickness of the pad from an upper surface of the first interconnect structure to the upper surface of the pad is greater than or equal to a thickness of the encapsulating resin layer from the upper surface of the first interconnect structure to an upper surface of the encapsulating resin layer,
the encapsulating resin layer fills a slit extending from an upper surface of the uppermost first insulating layer and stops at an interface between a lower surface of the uppermost first insulating layer and an upper surface of a second uppermost first insulating layer adjacent to the uppermost first insulating layer, and
the pad is configured to receive a semiconductor chip to be mounted thereon.
2. The wiring board as claimed in claim 1 , wherein the encapsulating resin layer covers an entirety of the side surfaces of the plurality of first insulating layers.
3. The wiring board as claimed in claim 1 , wherein the slit surrounds an area where the semiconductor chip is to be mounted.
4. The wiring board as claimed in claim 1 , further comprising:
a second interconnect structure including a second interconnect layer, and a second insulating layer having a non-photosensitive thermosetting resin as a main component thereof, wherein
the first interconnect structure is laminated on the second interconnect structure, and
the encapsulating resin layer covers an upper surface of the second interconnect structure.
5. The wiring board as claimed in claim 4 , wherein the thickness of the encapsulating resin layer is greater than a thickness of the second insulating layer from a lower surface of the second insulating layer to an upper surface of the second insulating layer.
6. The wiring board as claimed in claim 4 , wherein
the second interconnect layer of the second interconnect structure is exposed at a lower surface of the second insulating layer,
the second interconnect structure includes a via interconnect penetrating the second insulating layer and electrically connecting to the second interconnect layer, and
a lowermost first interconnect layer of the plurality of first interconnect layers of the first interconnect structure is directly bonded to a top end surface of the via interconnect through a seed layer.
7. The wiring board as claimed in claim 4 , wherein
a thermal expansion coefficient of the encapsulating resin layer is lower than a thermal expansion coefficient of each first insulating layer of the plurality of first insulating layers, and
the thermal expansion coefficient of the encapsulating resin layer is equal to a thermal expansion coefficient of the second insulating layer.
8. The wiring board as claimed in claim 1 , further comprising:
a second interconnect structure provided on a lower surface of the first interconnect structure, wherein:
the second interconnect structure includes low-density interconnect layers having an interconnect density lower than an interconnect density of each of high-density interconnect layers of the first interconnect structure,
the encapsulating resin layer is provided on an upper surface of the second interconnect structure so as to cover the upper surface and a side surface of the first interconnect structure, and
the encapsulating resin layer surrounds the first interconnect structure in a plan view viewed from above in a direction perpendicular to the upper surface of the first interconnect structure.
9. A semiconductor device comprising:
a base board;
the wiring board according to claim 1 , mounted on the base board; and
the semiconductor chip mounted on the wiring board.