Semiconductor device and electronic device
A semiconductor device with low power consumption is provided. In a cascode circuit including a first transistor provided on a low power supply potential side and a second transistor provided on a high power supply potential side, a source or a drain of a third transistor and a capacitor are connected to a gate of the second transistor. A gate of the first transistor is electrically connected to a back gate of the second transistor. An OS transistor is used as the third transistor.
1. A semiconductor device comprising a first transistor, a second transistor, a third transistor, a capacitor, and a functional element,
wherein one of a source and a drain of the first transistor is electrically connected to a first terminal,
wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,
wherein a gate of the first transistor is electrically connected to a second terminal,
wherein the other of the source and the drain of the second transistor is electrically connected to a third terminal,
wherein the other of the source and the drain of the second transistor is electrically connected to the functional element,
wherein one of a source and a drain of the third transistor is electrically connected to a fourth terminal,
wherein the other of the source and the drain of the third transistor is electrically connected to a gate of the second transistor,
wherein a gate of the third transistor is electrically connected to a fifth terminal,
wherein the capacitor is electrically connected to the other of the source and the drain of the third transistor,
wherein a semiconductor layer of the third transistor comprises an oxide semiconductor,
wherein the functional element comprises a resistor, a constant current source, or a parallel resonant circuit, and
wherein at least one of the first transistor to the third transistor is a multi-gate transistor.
2. The semiconductor device according to claim 1 ,
wherein the second transistor comprises a back gate, and
wherein the gate of the first transistor is electrically connected to the back gate.
3. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor comprises at least one of In and Zn.
4. The semiconductor device according to claim 1 ,
wherein a semiconductor layer of the first transistor comprises an oxide semiconductor.
5. The semiconductor device according to claim 1 ,
wherein a semiconductor layer of the second transistor comprises an oxide semiconductor.
6. The semiconductor device according to claim 1 , being electrically connected to an antenna.
7. An electronic device comprising:
the semiconductor device according to claim 1 ; and
a speaker, a microphone, or a secondary battery.
8. The semiconductor device according to claim 1 , further comprising:
a first coil electrically connected to the second terminal and the gate of the first transistor.
9. The semiconductor device according to claim 8 , further comprising:
a second coil electrically connected to the first terminal and the one of the source and the drain of the first transistor.
10. The semiconductor device according to claim 1 , further comprising:
an operation amplifier,
wherein the operation amplifier is electrically connected to the other one of the source and the drain of the third transistor, the capacitor, and the gate of the second transistor.
11. A semiconductor device comprising a first transistor, a second transistor, a third transistor, a capacitor, and a functional element,
wherein one of a source and a drain of the first transistor is electrically connected to a first terminal,
wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,
wherein a gate of the first transistor is electrically connected to a second terminal,
wherein the other of the source and the drain of the second transistor is electrically connected to a third terminal,
wherein the other of the source and the drain of the second transistor is electrically connected to the functional element,
wherein one of a source and a drain of the third transistor is electrically connected to a fourth terminal,
wherein the other of the source and the drain of the third transistor is electrically connected to a gate of the second transistor,
wherein a gate of the third transistor is electrically connected to a fifth terminal,
wherein the capacitor is electrically connected to the other of the source and the drain of the third transistor,
wherein a semiconductor layer of the third transistor comprises an oxide semiconductor,
wherein the functional element comprises a resistor, a constant current source, or a parallel resonant circuit,
wherein the second transistor is a multi-gate transistor,
wherein a transconductance of the second transistor is higher than each of transconductances of the first transistor and the third transistor.
12. The semiconductor device according to claim 11 ,
wherein the second transistor comprises a back gate, and
wherein the gate of the first transistor is electrically connected to the back gate.
13. The semiconductor device according to claim 11 ,
wherein the oxide semiconductor comprises at least one of In and Zn.
14. The semiconductor device according to claim 11 ,
wherein a semiconductor layer of the first transistor comprises an oxide semiconductor.
15. The semiconductor device according to claim 11 ,
wherein a semiconductor layer of the second transistor comprises an oxide semiconductor.
16. The semiconductor device according to claim 11 , being electrically connected to an antenna.
17. An electronic device comprising:
the semiconductor device according to claim 11 ; and
a speaker, a microphone, or a secondary battery.
18. The semiconductor device according to claim 11 , further comprising:
a first coil electrically connected to the second terminal and the gate of the first transistor.
19. The semiconductor device according to claim 18 , further comprising:
a second coil electrically connected to the first terminal and the one of the source and the drain of the first transistor.
20. The semiconductor device according to claim 11 , further comprising:
an operation amplifier,
wherein the operation amplifier is electrically connected to the other one of the source and the drain of the third transistor, the capacitor, and the gate of the second transistor.