Vertical-transport field-effect transistor with backside gate contact
A VTFET is on a wafer and a backside power delivery network is on a backside of the wafer. A first backside contact is connected to a gate of the VTFET and a first portion of the backside power delivery network. The VTFET has a first width and the first width is a contacted poly pitch (CPP). The first backside contact may be at least the first width from the VTFET. The first backside contact may be double the first width from the VTFET.
1. A semiconductor device comprising:
a vertical-transport field-effect transistor (VTFET) on a wafer;
a backside power delivery network on a backside of the wafer; and
a first backside contact connected to a gate of the VTFET and a first portion of the backside power delivery network, wherein the first backside contact delivers signals from the first portion of the backside power delivery network to the gate of the VTFET.
2. The semiconductor device of claim 1 , further comprising:
wherein the VTFET has a first width, and wherein the first width is a contacted poly pitch (CPP); and
wherein the first backside contact is at least the first width from the VTFET.
3. The semiconductor device of claim 1 , further comprising:
wherein the VTFET has a first width, and wherein the first width is a contacted poly pitch (CPP); and
wherein the first backside contact is double the first width from the VTFET.
4. The semiconductor device of claim 1 , wherein the signals delivered from the first portion of the backside power delivery network to the gate of the VTFET through the first backside contact are selected from the group consisting of a clock signal, a bus signal, and an input/output (I/O) signal.
5. The semiconductor device of claim 1 , wherein a height of the first backside contact is a cell height of the VTFET.
6. The semiconductor device of claim 1 , further comprising:
a frontside contact, wherein the frontside contact is connected to a top source/drain region of the VTFET and a frontside wiring.
7. The semiconductor device of claim 6 , wherein the frontside wiring is selected from the group consisting of local clock signal and an external input signal.
8. A semiconductor device comprising:
a plurality of vertical-transport field-effect transistor (VTFET) on a wafer;
a backside power delivery network on a backside of the wafer; and
a first backside contact connected to a gate of each VTFET of the plurality of VTFET and a first portion of the backside power delivery network, wherein the first backside contact delivers signals from the first portion of the backside power delivery network to the gate of each VTFET of the plurality of VFETS.
9. The semiconductor device of claim 8 , further comprising:
wherein each VTFET of the plurality of VTFET has a first width, and wherein the first width is a contacted poly pitch (CPP); and
wherein the first backside contact is at least the first width from a first VTFET of the plurality of VTFET.
10. The semiconductor device of claim 8 , further comprising:
wherein VTFET of the plurality of VTFET has a first width, and wherein the first width is a contacted poly pitch (CPP); and
wherein the first backside contact is double the first width from a first VTFET of the plurality of VTFET.
11. The semiconductor device of claim 8 , wherein the signals delivered from the first portion of the backside power delivery network to the gate of each VTFET of the plurality of VTFET through the first backside contact are selected from the group consisting of a clock signal, a bus signal, and an input/output (I/O) signal.
12. The semiconductor device of claim 8 , wherein a height of the first backside contact is a cell height of a VTFET of the plurality of VTFET.
13. The semiconductor device of claim 8 , further comprising:
a frontside contact, wherein the frontside contact is connected to a top source/drain region of the plurality of VTFET and a frontside wiring.
14. The semiconductor device of claim 8 , wherein the frontside wiring is selected from the group consisting of local clock signal and an external input signal.
15. A semiconductor device comprising:
a first plurality of vertical-transport field-effect transistor (VTFET) in a first row on a wafer;
a second plurality of VTFET in a second row on the wafer, wherein the first row is vertically adjacent to the second row;
a backside power delivery network on a backside of the wafer;
a first backside contact between the first row and the second row, wherein the first backside contact is connected to a gate of each VTFET of the first plurality of VTFET and a gate of each VTFET of the second plurality of VTFET; and
a second backside contact connected to the first backside contact and a first portion of the backside power delivery network, wherein the first and second backside contacts deliver signals from the first portion of the backside power delivery network to the gate of each VTFET of the first and second plurality of VTFET.
16. The semiconductor device of claim 15 , further comprising:
wherein at least one VTFET of the first plurality of VTFET and second plurality of VTFET has a first width, and wherein the first width is a contacted poly pitch (CPP).
17. The semiconductor device of claim 16 , further comprising:
a third plurality of VTFET in the first row, wherein between the first plurality of VTFET and the third plurality of VTFET is at least the first width; and
wherein the first backside contact extends adjacent to the third plurality of VTFET, and wherein the first backside contact is connected to a gate of each VTFET of the third plurality of VTFET.
18. The semiconductor device of claim 17 , further comprising:
a fourth plurality of VTFET in the second row, wherein between the second plurality of VTFET and the fourth plurality of VTFET is at least the first width; and
wherein the first backside contact extends adjacent to the fourth plurality of VTFET, and wherein the first backside contact is connected to a gate of each VTFET of the fourth plurality of VTFET.
19. The semiconductor device of claim 15 , wherein a height of the second backside contact is a height of a VTFET cell of the first plurality of VTFET and second plurality of VTFET.
20. The semiconductor device of claim 15 , wherein the signals delivered from the first portion of the backside power delivery network to the gate of each VTFET of the first and second plurality of VTFET through the first and second backside contacts are selected from the group consisting of a clock signal, a bus signal, and an input/output (I/O) signal.