ESD protection for integrated circuit devices
An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include electrostatic discharge (ESD) protection circuit structures. The ESD protection circuit structures may be formed in regions other than the region that the IGFETs are formed as well as in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming ESD protection circuit structures in regions below the IGFETs, an older process technology may be used and device size may be decreased. Furthermore, planar IGFETs of FinFETs may be formed in other regions to decrease device size and improve costs.
1. An integrated circuit device, comprising:
a first region;
a second region formed over the first region;
an internal circuit coupled between a first power supply potential and a second power supply potential, the internal circuit comprising an input terminal coupled to receive an input signal and an output terminal coupled to provide an output signal, the internal circuit comprising a first insulated gate field effect transistor (IGFET) formed in the second region, the first IGFET comprising a plurality of channels that extend in a first direction and are substantially aligned in a second direction to that crosses the first direction, and a control gate that substantially surrounds the plurality of channels, wherein the plurality of channels provide a controllable impedance path between a first source/drain terminal and a second source/drain terminal; and
a first electrostatic discharge (ESD) protection circuit structure that is provided in the first region, and is electrically connected between the first power supply potential and the second power supply potential,
wherein the control gate is coupled to receive the input signal and the first source/drain terminal is coupled to provide the output signal, and the internal circuit is not connected to receive a signal generated external to the integrated circuit device and is not connected to provide a signal external to the integrated circuit device.
2. The integrated circuit device of claim 1 , wherein:
the first ESD protection circuit structure comprises a diode.
3. The integrated circuit device of claim 2 , wherein:
the diode comprises an anode terminal electrically connected to the first power supply potential and a cathode region electrically connected to the second power supply potential.
4. The integrated circuit device of claim 1 , wherein:
the first ESD protection circuit structure comprises a silicon controlled rectifier (SCR) circuit coupled between the first power supply potential and the second power supply potential.
5. The integrated circuit device of claim 1 , wherein:
the internal circuit further comprises a second IGFET formed in the second region, the second IGFET comprising a plurality of channels that extend in the first direction and are substantially aligned in the second direction, and a control gate that substantially surrounds the plurality of channels, wherein the plurality of channels provide a controllable impedance path between a third source/drain terminal and a fourth source/drain terminal, and the third source/drain terminal is coupled to the first source/drain terminal; and
the first IGFET is a p-type IGFET and the second IGFET is a n-type IGFET.
6. The integrated circuit device of claim 5 , wherein:
the p-type IGFET and n-type IGFET are configured as an inverter circuit.
7. The integrated circuit device of claim 1 , wherein:
the first and second power supply potentials are provided from a source that is external to the integrated circuit device.
8. The integrated circuit device of claim 1 , further comprising:
an input buffer circuit coupled to receive an input signal provided from a source that is external to the integrated circuit device, the input signal received at a first pad.
9. The integrated circuit device of claim 8 , further comprising:
a second ESD protection circuit structure having a first terminal electrically connected between the first pad and an input terminal of the input buffer circuit.
10. The integrated circuit device of claim 9 , wherein:
the second ESD protection circuit structure comprises a resistor electrically connected between the first terminal of the second ESD protection circuit structure and the input terminal of the input buffer circuit.
11. The integrated circuit device of claim 10 , wherein:
the second ESD protection circuit structure further comprises a first diode having an anode terminal coupled to the first terminal of the second ESD protection circuit structure.
12. The integrated circuit device of claim 11 , wherein:
the second ESD protection circuit structure further comprises a second diode having a cathode terminal coupled to the first terminal of the second ESD protection circuit structure.
13. The integrated circuit device of claim 11 , wherein:
the first diode comprises a plurality of current carrying regions disposed substantially in the first direction.
14. The integrated circuit device of claim 1 , further comprising:
an output buffer circuit coupled to receive an input signal and provide an output signal externally to the integrated circuit device through a first pad.
15. The integrated circuit device of claim 14 , further comprising:
a second ESD protection circuit structure having a first terminal electrically connected between the first pad and an output terminal of the output buffer circuit.
16. The integrated circuit device of claim 15 , wherein:
the second ESD protection circuit structure further comprises a first diode having an anode terminal coupled to the first terminal of the second ESD protection circuit structure.
17. The integrated circuit device of claim 16 , wherein:
the second ESD protection circuit structure further comprises a second diode having a cathode terminal coupled to the first terminal of the second ESD protection circuit structure.
18. The integrated circuit device of claim 16 , wherein:
the first diode comprises a plurality of current carrying regions disposed substantially in the first direction.
19. The integrated circuit device of claim 1 , wherein:
the first ESD protection circuit structure is provided in a semiconductor substrate.
20. An integrated circuit device, comprising:
a first region;
a second region over the first region;
an internal circuit coupled between a first power supply potential and a second power supply potential, the internal circuit comprising an input terminal configured to receive an input signal, an output terminal configured to provide an output signal, and a first insulated gate field effect transistor (IGFET),
wherein the first IGFET is provided in the second region, comprises a plurality of channels and a control gate configured to receive the input signal, and is configured to provide a controllable impedance path between a first source/drain terminal and a second source/drain terminal; and
a first electrostatic discharge (ESD) protection circuit structure that is provided in the first region, and is electrically connected between the first power supply potential and the second power supply potential.