Integrated circuit with conductive line having line-ends
A semiconductor device is disclosed, including a plurality of conductive features disposed over a substrate. A dielectric layer separates the conductive features. A conductive line is provided, connecting a subset of the conductive features. The conductive line includes a line-like portion and a line-end portion.
1. A device comprising:
a first dielectric layer disposed over a substrate;
a first conductive feature disposed within the first dielectric layer;
a second conductive feature disposed within the first dielectric layer;
a third conductive feature over the substrate, wherein the first conductive feature is over and electrically coupled to the third conductive feature;
a fourth conductive feature in the substrate, wherein the second conductive feature extends continuously and physically contacts the fourth conductive feature, wherein the third conductive feature and the fourth conductive feature comprise a gate electrode and a doped region, respectively, and wherein the third conductive feature and the fourth conductive feature are arranged along a first direction; and
a conductive line connected to the first conductive feature and the second conductive feature, the conductive line including:
a line-like portion having a first length along the first direction and a first width along a second direction, wherein the line-like portion is aligned to the first conductive feature and the second conductive feature, and wherein the line-like portion is directly above, vertically overlaps, and physically contacts the second conductive feature, and
a first line-end portion connected to the line-like portion and disposed over the first conductive feature, wherein the first line-end portion has a second width along the second direction that is larger than the first width, wherein the first line-end portion has a second length along the first direction that is smaller than the first length.
2. The device of claim 1 , wherein the conductive line further includes a second line-end portion connecting to the line-like portion, wherein the second line-end portion has a third width that is larger than the first width, wherein the second line-end portion has a third length that is smaller than the first length.
3. The device of claim 2 , wherein the third width is the same as the second width.
4. The device of claim 2 , wherein the first line-end portion is connected to a first end of the line-like portion, and
wherein the device further comprises a fifth conductive feature directly under and in direct contact with the second line-end portion.
5. The device of claim 2 , wherein the first line-end portion physically contacts the first conductive feature.
6. The device of claim 1 , wherein at least one of the first conductive feature and the second conductive feature is a contact.
7. The device of claim 1 , wherein the fourth conductive feature comprises only one doped region.
8. A device comprising:
a first dielectric layer disposed over a substrate;
a doped feature contact and a gate contact extending through the first dielectric layer;
a gate stack disposed over the substrate, wherein the gate contact extends to the gate stack;
a doped feature disposed in the substrate and adjacent the gate stack, wherein the doped feature contact extends to the doped feature; and
a conductive line in contact with the doped feature contact and the gate contact, wherein no other conductive lines are between the conductive line and the gate contact and the doped feature contact, the conductive line including:
a line-like portion having a first length and a first width and in physical contact with the doped feature contact,
a first line-end portion connected to a first end of the line-like portion, wherein the first line-end portion has a second width that is larger than the first width, wherein the first line-end portion has a second length that is smaller than the first length, and
a second line-end portion connected to a second end of the line-like portion, wherein the second line-end portion has a third width that is larger than the first width, wherein the second line-end portion has a third length that is smaller than the first length.
9. The device of claim 8 , wherein the second line-end portion is disposed over the gate contact.
10. The device of claim 8 ,
wherein the line-like portion is aligned to and overlaps the doped feature contact and the gate contact from a top view.
11. The device of claim 8 , wherein the line-like portion physically contacts a top surface of the doped feature contact, the top surface of the doped feature contact facing away from the substrate, and
wherein the second line-end portion physically contacts a top surface of the gate contact, the top surface of the gate contact facing away from the substrate.
12. The device of claim 8 , wherein the conductive line is formed of a metal containing material and a barrier layer material at least partially surrounding the metal containing material.
13. The device of claim 8 , wherein the second width is equal to the third width, and
wherein the second length is equal to the third length.
14. A device comprising:
a substrate;
a gate stack disposed over the substrate;
a doped feature disposed in the substrate, wherein the gate stack and the doped feature are arranged along a first direction from a top view;
a first dielectric layer disposed over the substrate;
a first conductive feature and a second conductive feature extending through the first dielectric layer, wherein the first conductive feature extends to the gate stack and the second conductive feature extends to the doped feature; and
a conductive line disposed over the substrate and in physical contact with the first conductive feature and the second conductive feature, the conductive line comprising:
a line-like portion having a first length along the first direction and a first width along a second direction that is different than the first direction,
a first line-end portion having a second width along the second direction that is larger than the first width, and a second length along the first direction that is smaller than the first length, and
a second line-end portion having a third width along the second direction that is larger than the first width, and a third length along the first direction that is smaller than the first length, wherein a first end of the line-like portion is connected to the first line-end portion and a second end of the line-like portion opposite the first end is connected to the second line-end portion.
15. The device of claim 14 , wherein the second line-end portion is disposed over the second conductive feature.
16. The device of claim 14 , wherein the first line-end portion physically contacts a top surface of the first conductive feature, the top surface of the first conductive feature facing away from the substrate, and
wherein the second line-end portion physically contacts a top surface of the second conductive feature, the top surface of the second conductive feature facing away from the substrate.
17. The device of claim 14 , wherein the conductive line is formed of a metal containing material and a barrier layer material at least partially surrounding the metal containing material.
18. The device of claim 14 , wherein the line-like portion physically contacts the second conductive feature.
19. The device of claim 14 , wherein the second conductive feature extends to only one continuous doped feature.
20. The device of claim 8 , wherein the gate stack and the doped feature are arranged along a direction from a top view, and
wherein the line-like portion is oriented lengthwise along the direction.