Bonding wire for semiconductor devices
Bonding wire for semiconductor devices contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.
1. Bonding wire for semiconductor devices consisting of:
(C-1) P of 0.060 at % to 0.180 at %, or (C-2) P and one or more of Be, B, Ca, Y, La, and Ce in a total of 0.060 at % to 0.180 at %;
one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %;
one or more of Ni, Cu, Rh, Pd, Pt, and Au in a total of 0.01 at % to 5.00 at %; and
a balance of Ag and unavoidable impurities.
2. The bonding wire for semiconductor devices according to claim 1 wherein when defining a ratio of a total of a number of atoms of In, Ga, and Cd with respect to a total number of atoms of metal elements as a second element atomic ratio, the second element atomic ratio at a region from a wire surface to 1 nm from the wire surface in a depth direction is 1.1 times or more the second element atomic ratio at a region from 1 nm from the wire surface to 10 nm from the wire surface in the depth direction.
3. The bonding wire for semiconductor devices according to claim 1 wherein when defining a ratio of the total of a number of atoms of In, Ga, and Cd with respect to a total number of atoms of metal elements as a second element atomic ratio, the second element atomic ratio at a region from a wire surface to 10 nm from the wire surface in a depth direction is 2 times or more the second element atomic ratio at a region from 20 nm from the wire surface to 30 nm from the wire surface in the depth direction.
4. The bonding wire for semiconductor devices according to claim 1 wherein an average crystal grain size in a cross-section perpendicular to a wire axis is 0.2 μm to 3.5 μm.
5. The bonding wire for semiconductor devices according to claim 1 , wherein when measuring a crystal direction in a wire axial direction at a cross-section parallel to a wire axis, including the wire axis, of said bonding wire, the abundance ratio of a <100> crystal direction where an angular difference with respect to the wire axial direction of said bonding wire is 15 degrees or less is, by area ratio, 30% to 100%.
6. The bonding wire for semiconductor devices according to claim 1 containing one or more of In, Ga, and Cd in a total of 2.00 at % or less.
7. Bonding wire for semiconductor devices consisting of:
(C-3) P of 0.031 at % to less than 0.060 at % or (C-4) P of 0.031 at % to less than 0.060 at % and one or more of Be, B, Ca, Y, La, and Ce in a total of 0.031 at % to 0.180 at %;
one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %;
one or more of Ni, Cu, Rh, Pd, Pt, and Au in a total of 0.01 at % to 5.00 at %; and
a balance of Ag and unavoidable impurities,
wherein when defining a ratio of the total of a number of atoms of In, Ga, and Cd with respect to a total number of atoms of metal elements as a second element atomic ratio, the bonding wire satisfies one or both of
(A) the second element atomic ratio at a region from a wire surface to 1 nm from the wire surface in a depth direction is 1.1 times or more the second element atomic ratio at a region from 1 nm from the wire surface to 10 nm from the wire surface in the depth direction, and
(B) the second element atomic ratio at a region from the wire surface to 10 nm from the wire surface in the depth direction is 2 times or more the second element atomic ratio at a region from 20 nm from the wire surface to 30 nm from the wire surface in the depth direction.