Semiconductor device with contact structure
The present application discloses a semiconductor device with a contact structure. The semiconductor device includes a bottom dielectric layer positioned on a substrate; a bottom conductive layer positioned in the bottom dielectric layer; an etch stop layer positioned on the bottom conductive layer; a first inter-dielectric layer positioned on the etch stop layer; and a contact structure including a body portion positioned along the first inter-dielectric layer and extending to the etch stop layer, and a contact portion positioned in the etch stop layer and contacting the body portion and the bottom conductive layer. A width of the body portion is greater than a width of the contact portion.
1. A semiconductor device, comprising:
a bottom dielectric layer positioned on a substrate;
a bottom conductive layer positioned in the bottom dielectric layer;
an etch stop layer positioned on the bottom conductive layer, wherein the etch stop layer is a single layer made of silicon carbonitride, or silicon oxycarbide, wherein a height of the bottom conductive layer is equal to a thickness of the bottom dielectric layer, such that a bottom surface of the bottom conductive layer is in contact with a top surface of the substrate while a top surface of the bottom conductive layer is in contact with a bottom surface of the etch stop layer;
a first inter-dielectric layer positioned on the etch stop layer, wherein the first inter-dielectric layer is a single layer, wherein the first inter-dielectric layer and the etch stop layer are made of different materials; and
a contact structure comprising:
a body portion positioned along the first inter-dielectric layer and extending to the etch stop layer, wherein a bottom surface of the body portion is positioned below a top surface of the etch stop layer; and
a contact portion positioned in the etch stop layer, wherein the contact portion is extended from the body portion and is in contact with a portion of the top surface of the bottom conductive layer, wherein a height of the contact portion is less than a thickness of the etch stop layer;
wherein a width of the body portion is greater than a width of the contact portion;
wherein a height of the body portion is greater than a height of the bottom conductive layer;
wherein a height of the contact portion is less than a height of the etch stop layer;
wherein a width of the bottom conductive layer is greater than the width of the body portion of the contact structure.
2. The semiconductor device of claim 1 , wherein a sidewall of the body portion is substantially vertical.
3. The semiconductor device of claim 2 , wherein a sidewall of the contact portion is substantially vertical.
4. The semiconductor device of claim 3 , wherein a width ratio of the width of the contact portion to the width of the body portion is between about 10% and about 75%.
5. The semiconductor device of claim 4 , wherein the height of the body portion is greater than the height of the contact portion.
6. The semiconductor device of claim 5 , wherein a height ratio of the height of the contact portion to a total height of the contact structure is between 5% and about 45%.
7. The semiconductor device of claim 6 , wherein a width ratio of the width of the body portion to the width of the bottom conductive layer is between about 5% and about 70%.
8. The semiconductor device of claim 7 , further comprising a second dielectric layer formed on the first inter-dielectric layer, wherein the body portion of the contact structure is positioned along the second dielectric layer and the first inter-dielectric layer, and extending to the etch stop layer, such that the height of the body portion of the contact structure is greater than an overall thickness of the first dielectric layer and the second inter-dielectric layer.
9. The semiconductor device of claim 8 , wherein the first inter-dielectric layer and the second dielectric layer comprise the same material.
10. The semiconductor device of claim 9 , wherein the second dielectric layer comprises a self-planarizing material.
11. The semiconductor device of claim 1 , further comprising:
a first opening formed at the first inter-dielectric layer and extended into the etch stop layer at a position that a bottom wall of the first opening is indented from the top surface of the etch stop layer, wherein the body portion is received in the first opening, such that the bottom surface of the body portion is positioned below the top surface of the etch stop layer;
a second opening formed at the etch stop layer below the top surface thereof and communicated with the first opening, wherein the contact portion is received in the second opening, such that the height of the contact portion is less than a thickness of the etch stop layer; and
a first conductive material deposited in the first opening and the second opening concurrently to form the body portion within the first opening and the contact portion within the second opening.
12. The semiconductor device of claim 1 , wherein the contact structure is made of tungsten, cobalt, zirconium, tantalum, titanium, aluminum, copper, metal carbides, metal nitrides, transition metal aluminides, or a combination thereof.