In-situ chip design for pulse IV self-heating evaluation
An in-situ chip design is provided for self-heating free characterization of a device under test (DUT) with a short time constant. The in-situ chip design includes a pulse generator configured to output a pulse to the DUT and a buffering circuit arranged between the pulse generator and the DUT. The buffering circuit includes a first switch and an adjustable buffer circuit in parallel with the first switch and being controllable to apply one of various degrees of buffering to the pulse.
1. An in-situ chip design for self-heating free characterization of a device under test (DUT) with a short time constant, the in-situ chip design comprising:
a transistor disposed as the DUT and comprising a drain pad, a source pad and a gate;
a pulse generator configured to output a pulse to the gate of the DUT;
a buffering circuit arranged between the pulse generator and the DUT; and
a first optional circuit with a selectable force pad and a selectable control path to the DUT, the selectable control path comprising:
a switch to which the selectable force pad is connected;
a first optional circuit pad; and
an extra buffer electrically interposed between the first optional circuit pad and the switch,
the buffering circuit comprising a first switch and an adjustable buffer circuit in parallel with the first switch and being controllable to apply one of various degrees of buffering to the pulse.
2. The in-situ chip design according to claim 1 , further comprising a frequency selector arranged between the pulse generator and the buffering circuit and configured to select one of varying frequencies for the pulse.
3. The in-situ chip design according to claim 1 , wherein the adjustable buffer circuit comprises:
a buffer with buffer outputs of varying buffer capabilities; and
second switches respectively disposed in series with a corresponding one of the buffer outputs.
4. The in-situ chip design according to claim 1 , wherein the DUT is one of an N-doped field effect transistor (NFET) and a P-doped field effect transistor (PFET).
5. The in-situ chip design according to claim 1 , wherein:
the pulse generator is enabled, the selectable force pad is selected low and zero voltage is applied to the source pad to generate a fast rise pulse whereupon drain voltage and alternating current are sensible at the drain pad, and
the pulse generator is disabled, the selectable force pad is selected on, the first optional circuit pad is used to sense voltage at the gate with the extra buffer disabled, drain voltage is applied to the first optional circuit pad and zero voltage is applied to the source pad to generate an external gate pulse whereupon drain current is sensed at the drain pad.
6. The in-situ chip design according to claim 5 , further comprising a second optional circuit with a selectable sensor pad for sensing a voltage drop to the DUT.
7. The in-situ chip design according to claim 6 , wherein the first and second optional circuits form a Kelvin connection with a single force pad and a single sensor pad.
8. A method of operating an-situ chip design according to claim 1 for the self-heating free characterization of the DUT with the short time constant, the method comprising:
enabling an in-situ pulse IV generator to output the pulse to the DUT;
executing in-situ pulse IV characterization for the DUT at multiple temperatures;
adjusting a power range of the pulse to have an adjusted power;
re-executing the in-situ pulse IV characterization for the DUT at the multiple temperatures and at the adjusted power; and
calibrating a temperature versus power relationship of the DUT from results of the executing and the re-executing.
9. The method according to claim 8 , wherein:
the method further comprises determining whether the power range of the pulse can be adjusted, and
the adjusting of the power range is executed when it is determined that the power range can be adjusted.
10. The method according to claim 8 , further comprising obtaining a voltage drop and a DC correction of the DUT.
11. The method according to claim 8 , wherein the adjusting of the power range comprises controlling the buffering circuit.
12. The method according to claim 11 , wherein the controlling of the buffering circuit comprises applying one of zero buffering and one of varied buffering degrees to the pulse.
13. An in-situ chip design for self-heating free characterization of a device under test (DUT) with a short time constant, the in-situ chip design comprising:
a transistor disposed as the DUT and comprising a drain pad, a source pad and a gate;
a pulse generator configured to output a pulse to the DUT;
a buffering circuit arranged between the pulse generator and the DUT; and
at least a first optional circuit with a selectable force pad and a selectable control path to the DUT, the selectable control path comprising:
a switch to which the selectable force pad is connected;
a first optional circuit pad; and
an extra buffer electrically interposed between the first optional circuit pad and the switch,
the buffering circuit comprising a first switch and an adjustable buffer circuit in parallel with the first switch and being controllable to apply one of various degrees of buffering to the pulse whereby an increase in a degree of buffering to the pulse corresponds to a faster rising pulse being output to the DUT.
14. The in-situ chip design according to claim 13 , wherein the adjustable buffer circuit comprises:
a buffer with buffer outputs of varying buffer capabilities; and
second switches respectively disposed in series with a corresponding one of the buffer outputs.
15. An in-situ chip design for self-heating free characterization of a device under test (DUT) with a short time constant, the in-situ chip design comprising:
a transistor disposed as the DUT and comprising a drain pad, a source pad and a gate;
first and second pulse generators respectively configured to output first and second pulses to the gate and the drain of the DUT, respectively;
first and second buffering circuits respectively arranged between the first and second pulse generators and the gate and the drain of the DUT, respectively; and
at least a first optional circuit with a selectable force pad and a selectable control path to the DUT, the selectable control path comprising:
a switch to which the selectable force pad is connected;
a first optional circuit pad; and
an extra buffer electrically interposed between the first optional circuit pad and the switch,
each of the first and second buffering circuits comprising a first switch and an adjustable buffer circuit in parallel with the first switch and being controllable to apply one of various degrees of buffering to the first and second pulses, respectively.
16. The in-situ chip design according to claim 15 , further comprising first and second frequency selectors respectively arranged between the first and second pulse generators and the first and second buffering circuits, respectively, and configured to select one of varying frequencies for the first and second pulses, respectively.
17. The in-situ chip design according to claim 15 , wherein the adjustable buffer circuit of each of the first and second buffering circuits comprises:
a buffer with buffer outputs of varying buffer capabilities; and
second switches respectively disposed in series with a corresponding one of the buffer outputs.
18. The in-situ chip design according to claim 15 , wherein the DUT is one of an N-doped field effect transistor (NFET) and a P-doped field effect transistor (PFET).
19. The in-situ chip design according to claim 15 , further comprising:
a second optional circuit with a second selectable force pad and a second selectable control path to the drain of the DUT.
20. The in-situ chip design according to claim 19 , further comprising:
a first additional optional circuit with a first additional selectable sensor pad for sensing a voltage drop to the gate of the DUT; and
a second additional optional circuit with a second additional selectable sensor pad for sensing a voltage drop to the drain of the DUT.
21. The in-situ chip design according to claim 20 , wherein:
the first optional circuit and the first additional optional circuit form a first Kelvin connection with a first single force pad and a first single sensor pad, and
the second optional circuit and the second additional optional circuit form a second Kelvin connection with a second single force pad and a second single sensor pad.
22. An in-situ chip design for self-heating free characterization of a device under test (DUT) with a short time constant, the in-situ chip design comprising:
a transistor disposed as the DUT and comprising a drain pad, a source pad and a gate;
first and second pulse generators respectively configured to output first and second pulses to the gate and the drain of the DUT, respectively;
first and second buffering circuits respectively arranged between the first and second pulse generators and the gate and the drain of the DUT, respectively; and
at least a first optional circuit with a selectable force pad and a selectable control path to the DUT, the selectable control path comprising:
a switch to which the selectable force pad is connected;
a first optional circuit pad; and
an extra buffer electrically interposed between the first optional circuit pad and the switch,
each of the first and second buffering circuits comprising a first switch and an adjustable buffer circuit in parallel with the first switch and being controllable to apply one of various degrees of buffering to the first and second pulses, respectively, whereby an increase in a degree of buffering to the first and second pulses corresponds to faster rising first and second pulses being output to the DUT.
23. The in-situ chip design according to claim 22 , wherein the adjustable buffer circuit of each of the first and second buffering circuits comprises:
a buffer with buffer outputs of varying buffer capabilities; and
second switches respectively disposed in series with a corresponding one of the buffer outputs.