Wrap-around trench contact structure and methods of fabrication
A wrap-around source/drain trench contact structure is described. A plurality of semiconductor fins extend from a semiconductor substrate. A channel region is disposed in each fin between a pair of source/drain regions. An epitaxial semiconductor layer covers the top surface and sidewall surfaces of each fin over the source/drain regions, defining high aspect ratio gaps between adjacent fins. A pair of source/drain trench contacts are electrically coupled to the epitaxial semiconductor layers. The source/drain trench contacts comprise a conformal metal layer and a fill metal. The conformal metal layer conforms to the epitaxial semiconductor layers. The fill metal comprises a plug and a barrier layer, wherein the plug fills a contact trench formed above the fins and the conformal metal layer, and the barrier layer lines the plug to prevent interdiffusion of the conformal metal layer material and plug material.
1. An integrated circuit structure, comprising:
a semiconductor substrate having a first three-dimensional semiconductor structure and a second three-dimensional semiconductor structure there above;
a trench isolation layer on the semiconductor substrate around a lower portion of the first three-dimensional semiconductor structure and around a lower portion of the second three-dimensional semiconductor structure, wherein an upper portion of the first three-dimensional semiconductor structure and an upper portion of the second three-dimensional semiconductor structure extend above the trench isolation layer;
a gate structure that wraps around a channel region of the first three-dimensional semiconductor structure and that wraps around a channel region of the second three-dimensional semiconductor structure, the gate structure having a first side and a second side;
a first layer on the upper portion of the first three-dimensional semiconductor structure at the first side of the gate structure;
a second layer on the upper portion of the second three-dimensional semiconductor structure at the first side of the gate structure, the second layer discontinuous from the first layer, wherein there is no silicide between the first layer and the second layer;
a contact metal over the first layer and over the second layer, the contact metal between the first and second layers, the contact metal on a first portion of the trench isolation layer between the first layer and the second layer, and the contact metal having an uppermost surface, wherein the contact metal is not a silicide; and
a dielectric spacer between the contact metal and the gate structure, the dielectric spacer having an uppermost surface at a same level as the uppermost surface of the contact metal.
2. The integrated circuit structure of claim 1 , wherein the contact metal is directly on the first layer and directly on the second layer.
3. The integrated circuit structure of claim 1 , wherein the contact metal extends from the first portion of the trench isolation layer to a height above the first and second layers, and wherein the contact metal completely fills a gap between the first layer and the second layer.
4. The integrated circuit structure of claim 1 , wherein the first and second three-dimensional semiconductor structures comprise silicon, and wherein the first and second layers comprise silicon and germanium.
5. The integrated circuit structure of claim 1 , further comprising:
a third layer on the upper portion of the first three-dimensional semiconductor structure at the second side of the gate structure;
a fourth layer on the upper portion of the second three-dimensional semiconductor structure at the second side of the gate structure, the fourth layer discontinuous from the third layer; and
a second contact metal over the third layer and over the fourth layer, the second contact metal between the third and fourth layers, and the second contact metal on a second portion of the trench isolation layer between the third layer and the fourth layer.
6. The integrated circuit structure of claim 5 , wherein the second contact metal is directly on the third layer and directly on the fourth layer.
7. A method of fabricating an integrated circuit structure, the method comprising:
forming a first three-dimensional semiconductor structure and a second three-dimensional semiconductor structure above a semiconductor substrate;
forming a trench isolation layer on the semiconductor substrate around a lower portion of the first three-dimensional semiconductor structure and around a lower portion of the second three-dimensional semiconductor structure, wherein an upper portion of the first three-dimensional semiconductor structure and an upper portion of the second three-dimensional semiconductor structure extend above the trench isolation layer;
forming a gate structure that wraps around a channel region of the first three-dimensional semiconductor structure and that wraps around a channel region the second three-dimensional semiconductor structure, the gate structure having a first side and a second side;
forming a first layer on the upper portion of the first three-dimensional semiconductor structure at the first side of the gate structure;
forming a second layer on the upper portion of the second three-dimensional semiconductor structure at the first side of the gate structure, the second layer discontinuous from the first layer, wherein there is no silicide between the first layer and the second layer;
forming a contact metal over the first layer and over the second layer, the contact metal between the first and second layers, the contact metal on a first portion of the trench isolation layer between the first layer and the second layer, and the contact metal having an uppermost surface, wherein the contact metal is not a silicide; and
forming a dielectric spacer between the contact metal and the gate structure, the dielectric spacer having an uppermost surface at a same level as the uppermost surface of the contact metal.
8. The method of claim 7 , wherein the contact metal is directly on the first layer and directly on the second layer.
9. The method of claim 7 , wherein the contact metal extends from the first portion of the trench isolation layer to a height above the first and second layers, and wherein the contact metal completely fills a gap between the first layer and the second layer.
10. The method of claim 7 , wherein the first and second three-dimensional semiconductor structures comprise silicon, and wherein the first and second layers comprise silicon and germanium.
11. The method of claim 7 , further comprising:
forming a third layer on the upper portion of the first three-dimensional semiconductor structure at the second side of the gate structure;
forming a fourth layer on the upper portion of the second three-dimensional semiconductor structure at the second side of the gate structure, the fourth layer discontinuous from the third layer; and
forming a second contact metal over the third layer and over the fourth layer, the second contact metal between the third and fourth layers, and the second contact metal on a second portion of the trench isolation layer between the third layer and the fourth layer.
12. The method of claim 11 , wherein the second contact metal is directly on the third layer and directly on the fourth layer.
13. A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
a semiconductor substrate having a first three-dimensional semiconductor structure and a second three-dimensional semiconductor structure there above;
a trench isolation layer on the semiconductor substrate around a lower portion of the first three-dimensional semiconductor structure and around a lower portion of the second three-dimensional semiconductor structure, wherein an upper portion of the first three-dimensional semiconductor structure and an upper portion of the second three-dimensional semiconductor structure extend above the trench isolation layer;
a gate structure that wraps around a channel region of the first three-dimensional semiconductor structure and that wraps around a channel region of the second three-dimensional semiconductor structure, the gate structure having a first side and a second side;
a first layer on the upper portion of the first three-dimensional semiconductor structure at the first side of the gate structure;
a second layer on the upper portion of the second three-dimensional semiconductor structure at the first side of the gate structure, the second layer discontinuous from the first layer, wherein there is no silicide between the first layer and the second layer;
a contact metal over the first layer and over the second layer, the contact metal between the first and second layers, the contact metal on a first portion of the trench isolation layer between the first layer and the second layer, and the contact metal having an uppermost surface, wherein the contact metal is not a silicide; and
a dielectric spacer between the contact metal and the gate structure, the dielectric spacer having an uppermost surface at a same level as the uppermost surface of the contact metal.
14. The computing device of claim 13 , further comprising:
a memory coupled to the board.
15. The computing device of claim 13 , further comprising:
a communication chip coupled to the board.
16. The computing device of claim 13 , further comprising:
a camera coupled to the board.
17. The computing device of claim 13 , further comprising:
a battery coupled to the board.
18. The computing device of claim 13 , further comprising:
an antenna coupled to the board.
19. The computing device of claim 13 , wherein the component is a packaged integrated circuit die.
20. The computing device of claim 13 , wherein the computing device is selected from the group consisting of a mobile phone, a laptop, a desk top computer, a server, and a set-top box.