Layers, structures, acoustic wave resonators, devices and systems
Techniques for improving acoustic resonators and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A bulk acoustic wave (BAW) resonator may comprise a substrate. The bulk acoustic wave (BAW) may further comprise a plurality of piezoelectric layers including first, second, third and fourth piezoelectric layers acoustically coupled with one another and arranged over the substrate. The first, second, third and fourth piezoelectric layers may have respective piezoelectric axis orientations. The first, second, third and fourth piezoelectric layers may have respective thicknesses. Electromechanical coupling of the bulk acoustic wave (BAW) resonator may, but need not be limited.
1. A bulk acoustic wave (BAW) resonator comprising:
an acoustic reflector electrode, in which the acoustic reflector electrode includes at least a first pair of metal electrode layers and a second pair of metal electrode layers;
a first piezoelectric layer having a first piezoelectric axis orientation and a first thickness;
a second piezoelectric layer having a second piezoelectric axis orientation;
a third piezoelectric layer having a third piezoelectric axis orientation that opposes the second piezoelectric axis orientation, and having a third thickness acoustically and electrically coupled with the acoustic reflector electrode to facilitate a main resonant frequency of the bulk acoustic wave resonator; and
an integrated capacitive layer electrically coupled with the acoustic reflector electrode to facilitate limiting of an electromechanical coupling of the bulk acoustic wave resonator.
2. The bulk acoustic wave resonator as in claim 1 in which the main resonant frequency is an X band.
3. The bulk acoustic wave resonator as in claim 1 in which
the first thickness of the first piezoelectric layer is greater than an integral multiple a half wavelength of the main resonant frequency.
4. The bulk acoustic wave resonator as in claim 3 in which the first thickness of the first piezoelectric layer is greater than the integral multiple of the half wavelength of the main resonant frequency of the bulk acoustic wave resonator by about 10% or more of the integral multiple of the half wavelength of the main resonant frequency of the bulk acoustic wave resonator.
5. The bulk acoustic wave resonator as in claim 3 in which the first thickness of the first piezoelectric layer is greater than the integral multiple of the half wavelength of the main resonant frequency of the bulk acoustic wave resonator by about 50% or more of the integral multiple of the half wavelength of the main resonant frequency of the bulk acoustic wave resonator.
6. The bulk acoustic wave resonator as in claim 3 in which the first thickness of the first piezoelectric layer is greater than the integral multiple of the half wavelength of the main resonant frequency of the bulk acoustic wave resonator by about 90% or more of the integral multiple of the half wavelength of the main resonant frequency of the bulk acoustic wave resonator.
7. The bulk acoustic wave resonator as in claim 1 in which
the third thickness of the third piezoelectric layer is less than an integral multiple of a half wavelength of the main resonant frequency.
8. The bulk acoustic wave resonator as in claim 1 in which
the first piezoelectric axis orientation of the first piezoelectric layer opposes the second piezoelectric axis orientation of the second piezoelectric layer.
9. The bulk acoustic wave resonator as in claim 1 including at least a fourth piezoelectric layer.
10. The bulk acoustic wave resonator as in claim 1 in which:
the first piezoelectric layer includes at least a first piezoelectric material having a first electromechanical coupling; and
the third thickness of the third piezoelectric layer is sufficiently different than the first thickness of the first piezoelectric layer to facilitate the electromechanical coupling of the bulk acoustic wave resonator approximately 10% or less of a first electromechanical coupling of the first piezoelectric material.
11. The bulk acoustic wave resonator as in claim 1 in which the main resonant frequency is in one of a Ku band, a K band, a Ka band, a V band, and a W band.
12. The bulk acoustic wave resonator as in claim 1 in which members of the first pair of metal electrode layers and the second pair of metal electrode layers have respective acoustic impedances in an alternating arrangement to provide a plurality of reflective acoustic impedance mismatches.
13. The bulk acoustic wave resonator as in claim 1 in which
the third thickness of the third piezoelectric layer is different than the first thickness of the first piezoelectric layer.
14. The bulk acoustic wave resonator as in claim 1 in which:
a first member of the first pair of metal electrode layers is a first metal electrode layer;
the first metal electrode layer has a first electrical conductivity;
the acoustic reflector electrode includes at least a current spreading layer; and
the current spreading layer has a second electrical conductivity that is greater than the first electrical conductivity.
15. The bulk acoustic wave resonator as in claim 1 including at least an integrated inductor electrically coupled with the first piezoelectric layer, the second piezoelectric layer, and the third piezoelectric layer via the acoustic reflector electrode.
16. An electrical oscillator comprising:
electrical oscillator circuitry; and
a bulk acoustic wave resonator coupled with the electrical oscillator circuitry to excite electrical oscillation in the bulk acoustic wave resonator, in which the bulk acoustic wave resonator includes at least:
an acoustic reflector electrode, in which the acoustic reflector electrode includes at least a first pair of metal electrode layers and a second pair of metal electrode layers;
a first piezoelectric layer having a first piezoelectric axis orientation and a first thickness;
a second piezoelectric layer having a second piezoelectric axis orientation;
a third piezoelectric layer having a third piezoelectric axis orientation that opposes the second piezoelectric axis orientation, and having a third thickness acoustically and electrically coupled with the acoustic reflector electrode to facilitate a main resonant frequency of the bulk acoustic wave resonator; and
an integrated capacitive layer electrically coupled with the acoustic reflector electrode to facilitate limiting of an electromechanical coupling of the bulk acoustic wave resonator.
17. The electrical oscillator as in claim 16 in which the main resonant frequency is in one of a Ku band, a K band, a Ka band, a V band, and a W band.
18. An electrical filter comprising:
a plurality of bulk acoustic wave resonators over a substrate, in which a first bulk acoustic wave resonator of the plurality of bulk acoustic wave resonators includes at least:
an acoustic reflector electrode, in which the acoustic reflector electrode includes at least a first pair of metal electrode layers and a second pair of metal electrode layers;
a first piezoelectric layer having a first piezoelectric axis orientation and a first thickness;
a second piezoelectric layer having a second piezoelectric axis orientation;
a third piezoelectric layer having a third piezoelectric axis orientation that opposes the second piezoelectric axis orientation, and having a third thickness acoustically and electrically coupled with the acoustic reflector electrode to facilitate a main resonant frequency of the first bulk acoustic wave resonator; and
an integrated capacitive layer electrically coupled with the acoustic reflector electrode to facilitate limiting of an electromechanical coupling of the first bulk acoustic wave resonator.
19. The electrical filter as in claim 18 in which the main resonant frequency is in one of a Ku band, a K band, a Ka band, a V band, and a W band.
20. The electrical filter as in claim 18 comprising:
including at least an integrated inductor electrically coupled with the first piezoelectric layer, the second piezoelectric layer, and the third piezoelectric layer via the acoustic reflector electrode.