Granted Patent B2

US 12,442,104 · App. 18/137,069 · Granted Oct 14, 2025

Inventors: Sze Chieh Tan (Singapore, SG); Vicknesh Sahmuganathan (Singapore, SG); Christian W. Valencia (Alhambra, CA); Thai Cheng Chua (Cupertino, CA); Masahiro Kawasaki (San Jose, CA); Jenn-Yue Wang (Santa Clara, CA); John Sudijono (Singapore, SG)

Assignee: Applied Materials, Inc.

C30B29/04C30B25/10C30B25/186

Abstract

Claims (22)

1. A method of forming a nanocrystalline diamond film, the method comprising:

exposing a silicon substrate to a first plasma from a first plasma source, the first plasma source comprising one or more of C x H y wherein y≥x, carbon dioxide (CO 2 ), hydrogen (H 2 ), nitrogen (N 2 ), and argon (Ar) to provide an oxide rich amorphous interfacial layer directly on the icon substrate;

incubating the oxide-rich amorphoius interfacial layer directly on the silicon substrate with a gas stream and a second plasma to nucleate diamond particles and form a seeded substrate, the gas stream comprising a hydrocarbon; and

exposing the seeded substrate to a third plasma having a power greater than 50 W to form a nanocrystalline diamond film directly on the oxide-rich amorphous interfacial layer directly on the silicon substrate.

2. The method of claim 1 , wherein the hydrocarbon has a general formula of C m H n , where m is in a range of from 1 to 120, and n is in a range of from 2 to 242.

3. The method of claim 2 , wherein the gas stream further comprises one or more of carbon dioxide (CO 2 ), hydrogen (H 2 ), nitrogen (N 2 ), and argon (Ar).

4. The method of claim 3 , wherein the gas stream comprises from 5% to 90% of the hydrocarbon.

5. The method of claim 1 , wherein the oxide-rich amorphous interfacial layer directly on the substrate is maintained at a temperature of less than 600° C. during incubation.

6. The method of claim 1 , wherein the diamond particles are maintained at a temperature in a range of from 100° C. to 750° C. during formation of the nanocrystalline diamond film.

7. The method of claim 1 , wherein the silicon substrate is exposed to the first plasma at a temperature in a range of from 20° C. to 600° C.

8. The method of claim 1 , wherein the silicon substrate is exposed to the first plasma at a distance of greater than 1 cm.

9. The method of claim 1 , wherein when the oxide-rich amorphous interfacial layer directly on the silicon substrate is incubated with the gas stream, the gas stream is about 1 cm to 10 cm away from the top surface of the oxide-rich amorphous interfacial layer directly on the silicon substrate.

10. The method of claim 1 , wherein when the diamond particles are exposed to the second plasma, the third plasma is less than 10 cm away from the top surface of the seeded substrate.

11. The method of claim 1 , wherein the oxide-rich amorphous interfacial layer has a thickness of less than or equal to about 50 nm.

12. The method of claim 1 , wherein the oxide-rich amorphous interfacial layer comprises about 5 to about 70 atomic percent of oxygen.

13. A method of forming a diamond film, the method comprising:

exposing a treated substrate to a gas stream to nucleate diamond particles on a top surface of the substrate, the substrate comprising an exposed amorphous oxide-rich layer, the gas stream comprising a hydrocarbon; and

exposing the diamond particles to a plasma having a power greater than 50 W to form a nanocrystalline diamond film on the top surface of the substrate, wherein the substrate is not silicon.

14. The method of claim 13 , wherein the hydrocarbon has a general formula of C m H n , where m is in a range of from 1 to 120, and n is in a range of from 2 to 242.

15. The method of claim 14 , wherein the gas stream further comprises one or more of carbon dioxide (CO 2 ), hydrogen (H 2 ), nitrogen (N 2 ), and argon (Ar).

16. The method of claim 15 , wherein the gas stream comprises from 5% to 90% of the hydrocarbon.

17. The method of claim 13 , wherein the amorphous oxide-rich layer has a thickness of less than or equal to about 50 nm.

Assignments (1)

Continuity (1)

References Cited (195)