Metal oxide and semiconductor device
A novel metal oxide is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region comprises more carriers than the first region. A difference between the energy level of the conduction band minimum of the first region and the energy level of the conduction band minimum of the second region is 0.2 eV or more. The energy gap of the first region is greater than or equal to 3.3 eV and less than or equal to 4.0 eV and the energy gap of the second region is greater than or equal to 2.2 eV and less than or equal to 2.9 eV.
1. A semiconductor device comprising:
a metal oxide film comprising a channel formation region, a pair of electrodes in contact with the metal oxide film, and a gate electrode,
wherein the metal oxide film comprises:
a plurality of first regions formed of a first material; and
a second region formed of a second material,
wherein the metal oxide film is separated into the plurality of first regions and the second region,
wherein the plurality of first regions and the second region are distributed in the metal oxide film,
wherein the first material and the second material each comprise In, Zn and O,
wherein the first material comprises Ga,
wherein a concentration of In in the second material is higher than a concentration of In in the first material,
wherein each of the plurality of first regions has a size of greater than or equal to 0.5 nm and less than or equal to 2 nm, and
wherein the gate electrode is provided over the channel formation region.
2. The semiconductor device according to claim 1 ,
wherein the metal oxide film is a single layer.
3. The semiconductor device according to claim 1 ,
wherein each of the plurality of the first regions comprises a crystal with a size greater than or equal to 1 nm and less than or equal to 2 nm, and
wherein a crystal orientation of a plurality of the crystals is irregular.
4. The semiconductor device according to claim 1 ,
wherein the second region comprises crystals with a size greater than or equal to 1 nm and less than or equal to 2 nm.
5. The semiconductor device according to claim 1 ,
wherein the second region comprises a region where the second material is amorphous.
6. The semiconductor device according to claim 1 ,
wherein a plurality of spots are observed in a ring-shaped region in an electron diffraction pattern image of a part of the metal oxide film.
7. The semiconductor device according to claim 1 , further comprising an insulator in contact with the metal oxide film,
wherein the gate electrode overlaps with the metal oxide film with the insulator therebetween.
8. A display device comprising:
a display portion comprising a pixel,
wherein the pixel comprises the semiconductor device according to claim 1 .
9. A display device comprising:
a display portion and a gate driver,
wherein the gate driver comprises the semiconductor device according to claim 1 .
10. A display device comprising:
a display portion and a driver,
wherein the driver comprises the semiconductor device according to claim 1 .
11. A semiconductor device comprising:
a metal oxide film comprising a channel formation region, a pair of electrodes in contact with the metal oxide film, and a gate electrode,
wherein the metal oxide film comprises:
a plurality of first regions formed of a first material; and
a second region formed of a second material,
wherein the metal oxide film is separated into the plurality of first regions and the second region,
wherein the plurality of first regions and the second region are distributed in the metal oxide film,
wherein the first material and the second material each comprise In, Zn and O,
wherein the first material comprises Ga,
wherein a concentration of In in the second material is higher than a concentration of In in the first material,
wherein each of the plurality of first regions has a size of greater than or equal to 0.5 nm and less than or equal to 2 nm, and
wherein the channel formation region is provided over the gate electrode.
12. The semiconductor device according to claim 11 ,
wherein the metal oxide film is a single layer.
13. The semiconductor device according to claim 11 ,
wherein each of the plurality of the first regions comprises a crystal with a size greater than or equal to 1 nm and less than or equal to 2 nm, and
wherein a crystal orientation of a plurality of the crystals is irregular.
14. The semiconductor device according to claim 11 ,
wherein the second region comprises crystals with a size greater than or equal to 1 nm and less than or equal to 2 nm.
15. The semiconductor device according to claim 11 ,
wherein the second region comprises a region where the second material is amorphous.
16. The semiconductor device according to claim 11 ,
wherein a plurality of spots are observed in a ring-shaped region in an electron diffraction pattern image of a part of the metal oxide film.
17. The semiconductor device according to claim 11 , further comprising an insulator in contact with the metal oxide film,
wherein the gate electrode overlaps with the metal oxide film with the insulator therebetween.
18. A display device comprising:
a display portion comprising a pixel,
wherein the pixel comprises the semiconductor device according to claim 11 .
19. A display device comprising:
a display portion and a gate driver,
wherein the gate driver comprises the semiconductor device according to claim 11 .
20. A display device comprising:
a display portion and a driver,
wherein the driver comprises the semiconductor device according to claim 11 .