Parasitic channel mitigation in semiconductor structures
View Patent ↗Semiconductor structures that inhibit the conductivity of parasitic channels are described. In one example, a semiconductor structure includes a substrate, a III-nitride material region over a top surface of the substrate, a first species implanted within at least one region of surface region of the substrate in a first pattern spatially defined across a lateral dimension of the substrate, and a second species implanted within at least one region of the III-nitride material region. The second species can be implanted in a second pattern spatially defined across the lateral dimension of the substrate. The surface region of the substrate includes a parasitic channel. The at least one region of the substrate in which the first species is implanted includes a low-conductivity parasitic channel or is free of the parasitic channel.
1. A semiconductor structure, comprising:
a substrate;
a III-nitride material region over a top surface of the substrate;
a first species implanted within at least one region of the substrate in a first pattern spatially defined across a lateral dimension of the substrate; and
a second species implanted within at least one region of the III-nitride material region, wherein:
a top surface region of the substrate comprises a parasitic channel; and
the at least one region of the substrate in which the first species is implanted comprises a low-conductivity parasitic channel or is free of the parasitic channel.
2. The semiconductor structure of claim 1 , wherein a concentration of the first species in the at least one region of the surface region of the substrate is at least 10 19 /cm 3 .
3. The semiconductor structure of claim 1 , wherein a concentration of the second species in the at least one region of the of the III-nitride material region is at least 10 16 /cm 3 .
4. The semiconductor structure of claim 1 , wherein the first species is compositionally different than the second species.
5. The semiconductor structure of claim 1 , wherein the first species has a relative atomic mass of less than 5.
6. The semiconductor structure of claim 1 , further comprising:
a first transistor over the substrate; and
a second transistor located over the substrate and laterally spaced apart from the first transistor, wherein the at least one region of the surface region of the substrate in which the first species is implanted is between the first transistor and the second transistor.
7. The semiconductor structure of claim 1 , further comprising:
a first transistor over the substrate; and
a second transistor located over the substrate and laterally spaced apart from the first transistor, wherein the at least one region of the of the III-nitride material region in which the second species is implanted is between the first transistor and the second transistor.
8. The semiconductor structure of claim 1 , further comprising:
a first transistor over the substrate; and
a second transistor located over the substrate and laterally spaced apart from the first transistor, wherein:
the at least one region of the surface region of the substrate in which the first species is implanted is between the first transistor and the second transistor; and
the at least one region of the of the III-nitride material region in which the second species is implanted is between the first transistor and the second transistor.
9. The semiconductor structure according to claim 8 , wherein:
a concentration of the first species in the at least one region of the surface region of the substrate is at least 10 19 /cm 3 ; and
a concentration of the first species in another surface region of the substrate is less than 10 15 /cm 3 .
10. The semiconductor structure according to claim 8 , wherein:
a concentration of the second species in the at least one region of the III-nitride material region is at least 10 16 /cm 3 ; and
a concentration of the second species in another surface region of the III-nitride material region is less than 10 15 /cm 3 .
11. The semiconductor structure of claim 1 , further comprising:
a transistor over the substrate, wherein:
a concentration of the first species in the at least one region of the surface region of the substrate is at least 10 19 /cm 3 ;
a concentration of the second species in the at least one region of the III-nitride material region is at least 10 16 /cm 3 ;
another region of the substrate underneath a channel between a source of the transistor and a drain of the transistor is substantially free of the first species; and
another region of the III-nitride material region underneath a channel between a source of the transistor and a drain of the transistor is substantially free of the second species.
12. The semiconductor structure of claim 1 , wherein the III-nitride material region comprises a two-dimensional electron gas (2DEG), and the 2DEG region is substantially free of the first species.
13. The semiconductor structure according to claim 1 , wherein:
the III-nitride material region comprises a two-dimensional electron gas (2DEG) region;
the 2DEG region comprises a first 2DEG region and a second 2DEG region;
the first 2DEG region comprises the second species; and
the second 2DEG region is free from the second species or the second species is present in the second 2DEG region at a concentration that is less than in the first 2DEG region.
14. The semiconductor structure of claim 13 , wherein the second species forms a pattern spatially defined across a lateral dimension of the 2DEG region.
15. The semiconductor structure of claim 1 , wherein the substrate comprises a layer having a resistivity of greater than about 10 2 Ohms-cm.
16. The semiconductor structure of claim 1 , wherein the substrate is a silicon substrate.
17. The semiconductor structure of claim 1 , wherein the substrate is a bulk silicon wafer.
18. The semiconductor structure of claim 1 , wherein the substrate is a silicon-on-insulator substrate.
19. The semiconductor structure of claim 1 , wherein the substrate is a silicon carbide substrate.
20. The semiconductor structure of claim 1 , wherein the III-nitride material region comprises GaN.