Dummy stacked structures surrounding TSVs and method forming the same
A method includes forming a plurality of low-k dielectric layers over a semiconductor substrate, forming a first plurality of dummy stacked structures extending into at least one of the plurality of low-k dielectric layers, forming a plurality of non-low-k dielectric layers over the plurality of low-k dielectric layers, and forming a second plurality of dummy stacked structures extending into the plurality of non-low-k dielectric layers. The second plurality of dummy stacked structures are over and connected to corresponding ones of the first plurality of dummy stacked structures. The method further includes etching the plurality of non-low-k dielectric layers, the plurality of low-k dielectric layers, and the semiconductor substrate to form a via opening. The via opening is encircled by the first plurality of dummy stacked structures and the second plurality of dummy stacked structures. The via opening is then filled to form a through-via.
1. A structure comprising:
a semiconductor substrate;
a plurality of dielectric layers over the semiconductor substrate;
a first through-via penetrating through the semiconductor substrate and the plurality of dielectric layers; and
a first plurality of dummy stacked structures in the plurality of dielectric layers, wherein the first plurality of dummy stacked structures are adjacent to and encircle the first through-via.
2. The structure of claim 1 , wherein the first plurality of dummy stacked structures are electrically floating.
3. The structure of claim 1 , wherein neighboring ones of the first plurality of dummy stacked structures have substantially equal distances.
4. The structure of claim 1 , wherein the plurality of dielectric layers comprise:
a plurality of low-k dielectric layers; and
a plurality of non-low-k dielectric layers over the plurality of low-k dielectric layers, wherein the first plurality of dummy stacked structures penetrate through the plurality of non-low-k dielectric layers, and extend into at least one of the plurality of low-k dielectric layers.
5. The structure of claim 4 , wherein the first plurality of dummy stacked structures penetrate through all of the plurality of low-k dielectric layers, and extend to the semiconductor substrate.
6. The structure of claim 4 further comprising:
a second through-via penetrating through the semiconductor substrate and the plurality of dielectric layers; and
a second plurality of dummy stacked structures in the plurality of dielectric layers, wherein the second plurality of dummy stacked structures are adjacent to and encircle the second through-via, and wherein the second plurality of dummy stacked structures have bottom portions in one of the plurality of low-k dielectric layers, and the bottom portions are vertically spaced apart from the semiconductor substrate.
7. The structure of claim 1 , wherein the first plurality of dummy stacked structures have bottom ends vertically spaced apart from the semiconductor substrate.
8. The structure of claim 1 , wherein spacings from the first plurality of dummy stacked structures to the first through-via are smaller than about 1 μm.
9. A structure comprising:
a semiconductor substrate;
a plurality of dielectric layers over the semiconductor substrate, wherein the plurality of dielectric layers comprise:
a plurality of low-k dielectric layers; and
a plurality of non-low-k dielectric layers over the plurality of low-k dielectric layers;
a first through-via penetrating through the semiconductor substrate and the plurality of dielectric layers; and
a first plurality of dummy stacked structures in the plurality of dielectric layers, wherein the first plurality of dummy stacked structures are adjacent to and are aligned to a feature that encircles the first through-via, and wherein the first plurality of dummy stacked structures penetrate through the plurality of non-low-k dielectric layers, and extend into at least one of the plurality of low-k dielectric layers.
10. The structure of claim 9 , wherein the first plurality of dummy stacked structures are electrically floating.
11. The structure of claim 9 , wherein neighboring ones of the first plurality of dummy stacked structures have substantially equal distances.
12. The structure of claim 9 , wherein the first plurality of dummy stacked structures further comprise portions extending to the semiconductor substrate.
13. The structure of claim 9 further comprising:
a second through-via penetrating through the semiconductor substrate and the plurality of dielectric layers; and
a second plurality of dummy stacked structures in the plurality of dielectric layers, wherein the second plurality of dummy stacked structures are adjacent to and encircle the second through-via, and wherein the second plurality of dummy stacked structures have bottom portions in one of the plurality of low-k dielectric layers, and the bottom portions are vertically spaced apart from the semiconductor substrate.
14. A structure comprising:
a semiconductor substrate;
a plurality of dielectric layers over the semiconductor substrate, wherein the plurality of dielectric layers comprise:
a plurality of low-k dielectric layers; and
a plurality of non-low-k dielectric layers over the plurality of low-k dielectric layers;
a through-via penetrating through the semiconductor substrate and the plurality of dielectric layers; and
a plurality of dummy stacked structures in the plurality of dielectric layers, wherein the plurality of dummy stacked structures are adjacent to and encircle the through-via, wherein the plurality of dummy stacked structures are at least partially disposed in the plurality of non-low-k dielectric layers and at least one of the plurality of low-k dielectric layers.
15. The structure of claim 14 , wherein the plurality of dummy stacked structures are electrically floating.
16. The structure of claim 14 , wherein a portion of the through-via is higher than some portions of the plurality of dummy stacked structures.
17. The structure of claim 14 , wherein the plurality of dummy stacked structures extend to the semiconductor substrate.
18. The structure of claim 14 , wherein the plurality of dummy stacked structures have bottom ends vertically spaced apart from the semiconductor substrate.
19. The structure of claim 1 , wherein the first plurality of dummy stacked structures encircle, and are spaced apart from, the first through-via in a top view of the structure.
20. The structure of claim 1 , wherein in a top view of the structure, neighboring ones of the first plurality of dummy stacked structures are substantially evenly distributed.