IP Library › Granted Patent US 12,457,776
Granted Patent B2
US 12,457,776 · App. 17/554,772 · Granted Oct 28, 2025

Isolator

Inventor: Masaki Yamada (Oita Oita, JP)
Assignees: Kabushiki Kaisha Toshiba; Toshiba Electronic Devices & Storage Corporation
H10D62/115H01F27/29H01F27/323
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Quick Facts
Patent No.
US 12,457,776
App. No.
17/554,772
Granted
Oct 28, 2025
Kind
B2
Abstract

An isolator includes first and second conductors, and first to third insulating film. The first insulating film is provided between the first and second conductors. The first insulating film has a first film thickness, and includes silicon, oxygen, and nitrogen. The second insulating film is provided between the first conductor and the first insulating film. The second insulating film includes silicon and oxygen. The second insulating film includes no nitrogen, or further includes nitrogen of a smaller composition ratio than a nitrogen composition ratio in the first insulating film. The third insulating film is provided between the first conductor and the second insulating film. The second and third insulating films has second and third film thicknesses, respectively. The second and third film thickness are less than the first film thickness. The third insulating film having a different composition from the compositions of the first and second insulating films.

Claims (36)

1. An isolator, comprising:

a first conductor;

a second conductor facing the first conductor;

a first insulating film provided between the first conductor and the second conductor, the first insulating film having a first film thickness in a first direction directed from the first conductor toward the second conductor, the first insulating film including silicon, oxygen, and nitrogen;

a second insulating film provided between the first conductor and the first insulating film, the second insulating film having a second film thickness in the first direction, the second film thickness being less than the first film thickness of the first insulating film, the second insulating film including silicon and oxygen, the second insulating film including no nitrogen, or the second insulating film further including nitrogen of a smaller composition ratio than a nitrogen composition ratio in the first insulating film;

a third insulating film provided between the first conductor and the second insulating film, the third insulating film having a third film thickness in the first direction, the third film thickness being less than the first film thickness of the first insulating film, the third insulating film having a different composition from the compositions of the first and second insulating films;

a substrate arranged with the first and second conductors in the first direction, the first conductor being provided between the substrate and the second conductor;

a fourth insulating film provided between the substrate and the first conductor; and

a fifth insulating film provided between the third insulating film and the fourth insulating film,

the first conductor being provided in the fifth insulating film.

2. The isolator according to claim 1 , wherein

the fifth insulating film includes silicon oxide.

3. The isolator according to claim 1 , further comprising:

wiring provided at a boundary between the fourth insulating film and the fifth insulating film, the wiring being electrically connected to the first conductor;

a third conductor provided in the first, second, third, and fifth insulating films, the third conductor extending in the first direction at a position apart from the first and second conductors and being connected to the wiring; and

a first bonding pad electrically connected to the third conductor.

4. An isolator, comprising:

a first conductor;

a second conductor facing the first conductor;

a first insulating film provided between the first conductor and the second conductor, the first insulating film having a first film thickness in a first direction directed from the first conductor toward the second conductor, the first insulating film including silicon, oxygen, and nitrogen;

a second insulating film provided between the first conductor and the first insulating film, the second insulating film having a second film thickness in the first direction, the second film thickness being less than the first film thickness of the first insulating film, the second insulating film including silicon and oxygen, the second insulating film including no nitrogen, or the second insulating film further including nitrogen of a smaller composition ratio than a nitrogen composition ratio in the first insulating film;

a third insulating film provided between the first conductor and the second insulating film, the third insulating film having a third film thickness in the first direction, the third film thickness being less than the first film thickness of the first insulating film, the third insulating film having a different composition from the compositions of the first and second insulating films;

a sixth insulating film covering the second conductor, the second conductor being provided between the first insulating film and the sixth insulating film;

a first intermediate insulating film provided between the first insulating film and the sixth insulating film, the first intermediate insulating film including a different material from the first insulating film; and

a second intermediate insulating film provided between the first intermediate insulating film and the sixth insulating film, the second intermediate insulating film including a different material from the first intermediate insulating film,

the second conductor being provided in the first and second intermediate insulating films,

a distance between the first conductor and the second conductor being less than a distance between the first conductor and the first intermediate insulating film.

5. The isolator according to claim 4 , wherein

the sixth insulating film includes silicon nitride,

the first intermediate insulating film includes silicon nitride, and

the second intermediate insulating film includes silicon oxide.

6. The isolator according to claim 4 , further comprising:

a seventh insulating film covering the sixth insulating film, the seventh insulating film having a different composition from a composition of the sixth insulating film; and

a second bonding pad provided on the seventh insulating film, the second bonding pad being electrically connected to the second conductor through a contact hole provided in the sixth and seventh insulating films.

7. The isolator according to claim 6 , wherein

the seventh insulating film includes silicon oxide.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 17, 2021
From: YAMADA, MASAKI
To: KABUSHIKI KAISHA TOSHIBA; TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
Reel/Frame 058421/0049 →
Priority Claims (1)
JP 2021-070841 · Apr 20, 2021 · national
Continuity (1)
Related Publication 20220336580A1 · Oct 20, 2022
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